{"id":"https://openalex.org/W2945617995","doi":"https://doi.org/10.1109/irps.2019.8720547","title":"Positive Bias Instability in ZnO TFTs with Al<sub>2</sub>O<sub>3</sub> Gate Dielectric","display_name":"Positive Bias Instability in ZnO TFTs with Al<sub>2</sub>O<sub>3</sub> Gate Dielectric","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945617995","doi":"https://doi.org/10.1109/irps.2019.8720547","mag":"2945617995"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720547","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720547","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102892899","display_name":"Pavel Bolshakov","orcid":"https://orcid.org/0000-0002-6098-6823"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Pavel Bolshakov","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016283550","display_name":"Rodolfo A. Rodriguez-Davila","orcid":"https://orcid.org/0000-0001-8625-8878"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rodolfo A. Rodriguez-Davila","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033216861","display_name":"Manuel Quevedo-L\u00f3pez","orcid":"https://orcid.org/0000-0002-1867-7584"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Manuel Quevedo-Lopez","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007504207","display_name":"Chadwin D. Young","orcid":"https://orcid.org/0000-0003-0690-7423"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chadwin D. Young","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5102892899"],"corresponding_institution_ids":["https://openalex.org/I162577319"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.03451232,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"9","issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7335085272789001},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7180774807929993},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.582911491394043},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.5479320883750916},{"id":"https://openalex.org/keywords/zinc-compounds","display_name":"Zinc compounds","score":0.48250532150268555},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4798412024974823},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.4672750234603882},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.4321235418319702},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.420354425907135},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32604172825813293},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.25939083099365234},{"id":"https://openalex.org/keywords/zinc","display_name":"Zinc","score":0.22914418578147888},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1656447947025299},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.14778923988342285},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12256279587745667},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.07390108704566956},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07290849089622498},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07063931226730347}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7335085272789001},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7180774807929993},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.582911491394043},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5479320883750916},{"id":"https://openalex.org/C2911124769","wikidata":"https://www.wikidata.org/wiki/Q10749005","display_name":"Zinc compounds","level":3,"score":0.48250532150268555},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4798412024974823},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.4672750234603882},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4321235418319702},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.420354425907135},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32604172825813293},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.25939083099365234},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.22914418578147888},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1656447947025299},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.14778923988342285},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12256279587745667},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07390108704566956},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07290849089622498},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07063931226730347},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720547","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720547","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320321739","display_name":"Consejo Nacional de Ciencia y Tecnolog\u00eda","ror":"https://ror.org/059ex5q34"},{"id":"https://openalex.org/F4320337392","display_name":"Division of Electrical, Communications and Cyber Systems","ror":"https://ror.org/01krpsy48"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W589995197","https://openalex.org/W1965104822","https://openalex.org/W1999878492","https://openalex.org/W2010333022","https://openalex.org/W2017475187","https://openalex.org/W2032684510","https://openalex.org/W2043962514","https://openalex.org/W2073585222","https://openalex.org/W2093418857","https://openalex.org/W2167568835","https://openalex.org/W2511688914","https://openalex.org/W2891891958"],"related_works":["https://openalex.org/W2886936406","https://openalex.org/W3002235194","https://openalex.org/W3140942752","https://openalex.org/W2903976092","https://openalex.org/W635954796","https://openalex.org/W2071712090","https://openalex.org/W2357046631","https://openalex.org/W3092007158","https://openalex.org/W2796938634","https://openalex.org/W2965554330"],"abstract_inverted_index":{"Positive":[0],"bias":[1],"instability":[2],"stress":[3],"(PBI)":[4],"was":[5],"done":[6],"on":[7,113],"ZnO":[8],"thin-film":[9],"transistors":[10],"(TFTs)":[11],"with":[12],"Al":[13,74],"<sub":[14,18,32,53,67,75,79,104,116],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[15,19,33,54,68,76,80,105,117],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[16,77],"O":[17,78],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[20,81],"deposition":[21,82],"at":[22],"100\u00b0C":[23,44],"and":[24,36,107],"250\u00b0C.":[25],"The":[26,61],"threshold":[27],"voltage":[28],"(VT),":[29],"transconductance":[30],"(g":[31],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">m</sub>":[34,106],"),":[35],"subthreshold":[37],"slope":[38],"(SS)":[39],"were":[40],"monitored":[41],"where":[42],"the":[43,51,58,86,89,93,114],"samples":[45,63],"demonstrated":[46],"a":[47,72],"\u201cturn-around\u201d":[48,94],"phenomenon":[49],"in":[50,85,102],"\u0394V":[52,66],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</sub>":[55,69,118],"compared":[56],"to":[57,110],"250\u00b0C":[59,62],"samples.":[60],"show":[64],"consistent":[65],",":[70],"suggesting":[71],"higher":[73],"temperature":[83],"results":[84],"absence":[87],"of":[88],"defect":[90],"responsible":[91],"for":[92],"effect.":[95],"Both":[96],"sets":[97],"also":[98],"demonstrate":[99],"negligible":[100],"degradation":[101],"\u0394g":[103],"ASS-suggesting":[108],"little":[109],"no":[111],"influence":[112],"V":[115],"shift":[119],"by":[120],"interfacial":[121],"state":[122],"generation.":[123]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}