{"id":"https://openalex.org/W2946192824","doi":"https://doi.org/10.1109/irps.2019.8720544","title":"Process Optimization for HCI Improvement in I/O Analog Devices","display_name":"Process Optimization for HCI Improvement in I/O Analog Devices","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946192824","doi":"https://doi.org/10.1109/irps.2019.8720544","mag":"2946192824"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720544","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720544","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004552399","display_name":"C. Diouf","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR","IN"],"is_corresponding":true,"raw_author_name":"C. Diouf","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003223524","display_name":"Nicolas Guitard","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["FR","IN"],"is_corresponding":false,"raw_author_name":"N. Guitard","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111881717","display_name":"M. Rafik","orcid":"https://orcid.org/0009-0000-6342-7667"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["FR","IN"],"is_corresponding":false,"raw_author_name":"M. Rafik","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050788810","display_name":"Juan Jos\u00e9 Mart\u00ednez","orcid":"https://orcid.org/0000-0002-7069-7769"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["FR","IN"],"is_corresponding":false,"raw_author_name":"J. J. Martinez","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108821317","display_name":"X. Federspiel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR","IN"],"is_corresponding":false,"raw_author_name":"X. Federspiel","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104439073","display_name":"A. Bravaix","orcid":"https://orcid.org/0000-0002-2308-3537"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Bravaix","raw_affiliation_strings":["ST Microelectronics, Crolles, France","Yncr\u00e9a M\u00e9diterran\u00e9","Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"Yncr\u00e9a M\u00e9diterran\u00e9","institution_ids":[]},{"raw_affiliation_string":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","institution_ids":["https://openalex.org/I4210112016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060444539","display_name":"D. Muller","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR","IN"],"is_corresponding":false,"raw_author_name":"D. Muller","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113211895","display_name":"D. Roy","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR","IN"],"is_corresponding":false,"raw_author_name":"D. Roy","raw_affiliation_strings":["ST Microelectronics, Crolles, France","STMicroelectronics [Crolles]"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics [Crolles]","institution_ids":["https://openalex.org/I4210094169"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5004552399"],"corresponding_institution_ids":["https://openalex.org/I4210094169","https://openalex.org/I4210104693"],"apc_list":null,"apc_paid":null,"fwci":0.1205,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.44676092,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7282599210739136},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6736887693405151},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5984274744987488},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5765584707260132},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5625973343849182},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.5258453488349915},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5238497257232666},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5189545154571533},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.49155792593955994},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4531656503677368},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4448527991771698},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4390590488910675},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4334806799888611},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42777928709983826},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41936206817626953},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4001728296279907},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2095680832862854},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10794258117675781},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09029647707939148},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06838464736938477},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.06281664967536926}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7282599210739136},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6736887693405151},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5984274744987488},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5765584707260132},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5625973343849182},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5258453488349915},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5238497257232666},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5189545154571533},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49155792593955994},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4531656503677368},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4448527991771698},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4390590488910675},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4334806799888611},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42777928709983826},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41936206817626953},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4001728296279907},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2095680832862854},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10794258117675781},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09029647707939148},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06838464736938477},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.06281664967536926},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps.2019.8720544","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720544","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-03654186v1","is_oa":false,"landing_page_url":"https://hal.science/hal-03654186","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, France. pp.1-6, ⟨10.1109/IRPS.2019.8720544⟩","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1673959214","https://openalex.org/W1999169264","https://openalex.org/W2008462735","https://openalex.org/W2133178842","https://openalex.org/W2165717905"],"related_works":["https://openalex.org/W2049186354","https://openalex.org/W1863251870","https://openalex.org/W1634484921","https://openalex.org/W2170979950","https://openalex.org/W2101354357","https://openalex.org/W2039299085","https://openalex.org/W2545120047","https://openalex.org/W2131788322","https://openalex.org/W2058564794","https://openalex.org/W2020133164"],"abstract_inverted_index":{"Hot":[0],"carrier":[1],"injection":[2],"is":[3,17,31],"one":[4],"of":[5],"the":[6],"more":[7,18,20],"significant":[8],"reliability":[9],"issue":[10],"in":[11,22,34,54,64],"advanced":[12],"CMOS":[13,56],"technologies.":[14],"If":[15],"it":[16,30],"and":[19],"critical":[21],"thin":[23],"oxides":[24],"due":[25,37],"to":[26,38],"gate":[27],"length":[28],"scaling,":[29],"also":[32],"problematic":[33],"thicker":[35],"oxide":[36],"high":[39],"voltages":[40],"needed":[41],"for":[42,67],"I/O":[43,55],"devices.":[44],"In":[45],"this":[46],"paper,":[47],"we":[48],"show":[49],"a":[50],"phenomenal":[51],"HCI":[52],"improvement":[53],"analog":[57],"devices":[58],"by":[59],"substituting":[60],"arsenic":[61],"with":[62],"phosphorus":[63],"channel":[65],"doping":[66],"threshold":[68],"voltage":[69],"adjustment":[70],"process.":[71]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-03-10T16:38:18.471706","created_date":"2025-10-10T00:00:00"}