{"id":"https://openalex.org/W2946083818","doi":"https://doi.org/10.1109/irps.2019.8720518","title":"Plasma Antenna Charging in CMOS Image Sensors","display_name":"Plasma Antenna Charging in CMOS Image Sensors","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946083818","doi":"https://doi.org/10.1109/irps.2019.8720518","mag":"2946083818"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720518","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720518","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059989592","display_name":"Y. Sacchettini","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Y. Sacchettini","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108268630","display_name":"J.-P. Carrere","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. -P. Carrere","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030783510","display_name":"Vincent Goiffon","orcid":"https://orcid.org/0000-0001-5024-0115"},"institutions":[{"id":"https://openalex.org/I193033237","display_name":"Institut Superieur de l'Aeronautique et de l'Espace (ISAE-SUPAERO)","ror":"https://ror.org/04gyj6s21","country_code":"FR","type":"education","lineage":["https://openalex.org/I193033237","https://openalex.org/I4405258862"]},{"id":"https://openalex.org/I17866349","display_name":"Universit\u00e9 F\u00e9d\u00e9rale de Toulouse Midi-Pyr\u00e9n\u00e9es","ror":"https://ror.org/004raaa70","country_code":"FR","type":"education","lineage":["https://openalex.org/I17866349"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"V. Goiffon","raw_affiliation_strings":["ISAE-SUPAERO, Universit\u00e9 de Toulouse, Toulouse, France"],"affiliations":[{"raw_affiliation_string":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, Toulouse, France","institution_ids":["https://openalex.org/I17866349","https://openalex.org/I193033237"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038245880","display_name":"Pierre Magnan","orcid":"https://orcid.org/0000-0003-3122-7163"},"institutions":[{"id":"https://openalex.org/I17866349","display_name":"Universit\u00e9 F\u00e9d\u00e9rale de Toulouse Midi-Pyr\u00e9n\u00e9es","ror":"https://ror.org/004raaa70","country_code":"FR","type":"education","lineage":["https://openalex.org/I17866349"]},{"id":"https://openalex.org/I193033237","display_name":"Institut Superieur de l'Aeronautique et de l'Espace (ISAE-SUPAERO)","ror":"https://ror.org/04gyj6s21","country_code":"FR","type":"education","lineage":["https://openalex.org/I193033237","https://openalex.org/I4405258862"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Magnan","raw_affiliation_strings":["ISAE-SUPAERO, Universit\u00e9 de Toulouse, Toulouse, France"],"affiliations":[{"raw_affiliation_string":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, Toulouse, France","institution_ids":["https://openalex.org/I17866349","https://openalex.org/I193033237"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5059989592"],"corresponding_institution_ids":["https://openalex.org/I4210104693"],"apc_list":null,"apc_paid":null,"fwci":0.5961,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.68074107,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6681767106056213},{"id":"https://openalex.org/keywords/antenna","display_name":"Antenna (radio)","score":0.6670991778373718},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6572931408882141},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.653506875038147},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.633734405040741},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6091495752334595},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5844622850418091},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.532087504863739},{"id":"https://openalex.org/keywords/image-sensor","display_name":"Image sensor","score":0.522591233253479},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4472653269767761},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39276230335235596},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3055577278137207},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.20250698924064636},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1765068769454956},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13028976321220398},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11864224076271057}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6681767106056213},{"id":"https://openalex.org/C21822782","wikidata":"https://www.wikidata.org/wiki/Q131214","display_name":"Antenna (radio)","level":2,"score":0.6670991778373718},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6572931408882141},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.653506875038147},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.633734405040741},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6091495752334595},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5844622850418091},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.532087504863739},{"id":"https://openalex.org/C76935873","wikidata":"https://www.wikidata.org/wiki/Q209121","display_name":"Image sensor","level":2,"score":0.522591233253479},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4472653269767761},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39276230335235596},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3055577278137207},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20250698924064636},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1765068769454956},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13028976321220398},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11864224076271057},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720518","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720518","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8199999928474426,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1731642142","https://openalex.org/W1980584607","https://openalex.org/W1980964944","https://openalex.org/W1991469379","https://openalex.org/W1999438349","https://openalex.org/W2016765767","https://openalex.org/W2101303010","https://openalex.org/W2121074806","https://openalex.org/W2137816482","https://openalex.org/W2141706223","https://openalex.org/W2157850188","https://openalex.org/W2161213269","https://openalex.org/W6678000946","https://openalex.org/W6680599737"],"related_works":["https://openalex.org/W2022123780","https://openalex.org/W2349576212","https://openalex.org/W1981776476","https://openalex.org/W2352535872","https://openalex.org/W1590693222","https://openalex.org/W2382967348","https://openalex.org/W2334823507","https://openalex.org/W2107073676","https://openalex.org/W2565551736","https://openalex.org/W2542675020"],"abstract_inverted_index":{"Plasma":[0,26],"charging":[1,46],"damage":[2,19],"induced":[3,38],"on":[4,39],"MOSFETs":[5],"by":[6,22],"a":[7],"stripping":[8],"process":[9],"is":[10,20,28,48],"compared":[11],"between":[12],"two":[13],"CMOS":[14],"image":[15],"sensor":[16],"technologies.":[17],"The":[18],"modulated":[21],"the":[23,33,36,40,45,52,55,60],"substrate":[24,61],"configuration.":[25],"non-uniformity":[27],"electrically":[29],"characterized":[30],"to":[31],"determine":[32],"magnitude":[34],"of":[35,44,54],"stress":[37],"MOSFET.":[41],"A":[42],"model":[43],"mechanism":[47],"finally":[49],"proposed":[50],"including":[51],"study":[53],"protection":[56],"diode":[57],"efficiency":[58],"and":[59],"resistivity":[62],"impact.":[63]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}