{"id":"https://openalex.org/W2945633901","doi":"https://doi.org/10.1109/irps.2019.8720481","title":"An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer","display_name":"An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945633901","doi":"https://doi.org/10.1109/irps.2019.8720481","mag":"2945633901"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720481","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720481","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101855230","display_name":"Kentaro Kojima","orcid":"https://orcid.org/0000-0002-8977-9254"},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Kentaro Kojima","raw_affiliation_strings":["Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100708217","display_name":"Kodai Yamada","orcid":"https://orcid.org/0000-0002-9763-715X"},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kodai Yamada","raw_affiliation_strings":["Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050140256","display_name":"Jun Furuta","orcid":"https://orcid.org/0000-0003-0146-3077"},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Jun Furuta","raw_affiliation_strings":["Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan","institution_ids":["https://openalex.org/I27429435"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049656449","display_name":"Kazutoshi Kobayashi","orcid":"https://orcid.org/0000-0002-7139-7274"},"institutions":[{"id":"https://openalex.org/I27429435","display_name":"Kyoto Institute of Technology","ror":"https://ror.org/00965ax52","country_code":"JP","type":"education","lineage":["https://openalex.org/I27429435"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazutoshi Kobayashi","raw_affiliation_strings":["Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"Kyoto Insititute of Technology, Graduate School of Science & Technology, Kyoto, Japan","institution_ids":["https://openalex.org/I27429435"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5101855230"],"corresponding_institution_ids":["https://openalex.org/I27429435"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03455129,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9947999715805054,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.7935904860496521},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6601824164390564},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6393941640853882},{"id":"https://openalex.org/keywords/silicide","display_name":"Silicide","score":0.6189115643501282},{"id":"https://openalex.org/keywords/event","display_name":"Event (particle physics)","score":0.5314280986785889},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.5058678984642029},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.4697318971157074},{"id":"https://openalex.org/keywords/cross-section","display_name":"Cross section (physics)","score":0.46311795711517334},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4050678610801697},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3760409355163574},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3301995098590851},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1639406383037567},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.13170024752616882},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10357457399368286}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7935904860496521},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6601824164390564},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6393941640853882},{"id":"https://openalex.org/C2780901251","wikidata":"https://www.wikidata.org/wiki/Q426473","display_name":"Silicide","level":3,"score":0.6189115643501282},{"id":"https://openalex.org/C2779662365","wikidata":"https://www.wikidata.org/wiki/Q5416694","display_name":"Event (particle physics)","level":2,"score":0.5314280986785889},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5058678984642029},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.4697318971157074},{"id":"https://openalex.org/C52234038","wikidata":"https://www.wikidata.org/wiki/Q17128025","display_name":"Cross section (physics)","level":2,"score":0.46311795711517334},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4050678610801697},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3760409355163574},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3301995098590851},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1639406383037567},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.13170024752616882},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10357457399368286},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720481","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720481","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2095969016","https://openalex.org/W2134718348","https://openalex.org/W2142358791","https://openalex.org/W2146005144","https://openalex.org/W2160067645","https://openalex.org/W2771893093","https://openalex.org/W2796562513","https://openalex.org/W4230523369"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W2174354966","https://openalex.org/W2810180604","https://openalex.org/W2325281603","https://openalex.org/W2944964251","https://openalex.org/W2128687137","https://openalex.org/W1801212817","https://openalex.org/W2009878485"],"abstract_inverted_index":{"An":[0],"accurate":[1],"device-level":[2],"simulation":[3,53,69,78],"method":[4,24],"to":[5,48,62,73,87],"estimate":[6],"cross":[7,83],"sections":[8],"(CS)":[9],"of":[10],"single":[11],"event":[12],"upsets":[13],"for":[14],"a":[15,34,38],"standard":[16],"latch":[17],"is":[18,25,46,59,85],"proposed.":[19],"CS":[20,50],"from":[21],"the":[22,74,82,88,92],"proposed":[23],"compared":[26],"with":[27],"experimental":[28],"results":[29,70,79],"by":[30],"heavy":[31],"ions":[32],"on":[33],"fabricated":[35],"chip":[36],"in":[37,91],"65":[39],"nm":[40],"FDSOI.":[41],"Silicon":[42,57],"thickness":[43,58,90],"below":[44,95],"silicide":[45],"parameterized":[47],"make":[49],"coincident":[51],"between":[52],"and":[54],"measurement":[55,75],"results.":[56,76],"highly":[60],"correlated":[61],"soft-error":[63],"tolerance.":[64],"By":[65],"increasing":[66],"silicon":[67,89],"thickness,":[68],"becomes":[71],"closer":[72],"Device":[77],"show":[80],"that":[81],"section":[84],"proportional":[86],"raised":[93],"layer":[94],"silicide.":[96]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}