{"id":"https://openalex.org/W2945025225","doi":"https://doi.org/10.1109/irps.2019.8720479","title":"A New Approach to Validate GaN FET Reliability to Power-Line Surges Under Use-Conditions","display_name":"A New Approach to Validate GaN FET Reliability to Power-Line Surges Under Use-Conditions","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945025225","doi":"https://doi.org/10.1109/irps.2019.8720479","mag":"2945025225"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720479","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720479","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109256975","display_name":"S.R. Bahl","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Sandeep R. Bahl","raw_affiliation_strings":["High Voltage Power, Texas Instruments Incorporated, Dallas, TX, USA"],"affiliations":[{"raw_affiliation_string":"High Voltage Power, Texas Instruments Incorporated, Dallas, TX, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055778340","display_name":"Paul Brohlin","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Paul Brohlin","raw_affiliation_strings":["High Voltage Power, Texas Instruments Incorporated, Dallas, TX, USA"],"affiliations":[{"raw_affiliation_string":"High Voltage Power, Texas Instruments Incorporated, Dallas, TX, USA","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5109256975"],"corresponding_institution_ids":["https://openalex.org/I74760111"],"apc_list":null,"apc_paid":null,"fwci":1.073,"has_fulltext":false,"cited_by_count":23,"citation_normalized_percentile":{"value":0.77549023,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.759979248046875},{"id":"https://openalex.org/keywords/surge","display_name":"Surge","score":0.6888965368270874},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6089047789573669},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.557226300239563},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5051441788673401},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47101032733917236},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4506998062133789},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4426411986351013},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4199202060699463},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4079107344150543},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.38315141201019287},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3605785369873047},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3370658755302429},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2730714678764343},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1752948760986328},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07716482877731323}],"concepts":[{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.759979248046875},{"id":"https://openalex.org/C154108245","wikidata":"https://www.wikidata.org/wiki/Q287381","display_name":"Surge","level":2,"score":0.6888965368270874},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6089047789573669},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.557226300239563},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5051441788673401},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47101032733917236},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4506998062133789},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4426411986351013},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4199202060699463},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4079107344150543},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.38315141201019287},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3605785369873047},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3370658755302429},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2730714678764343},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1752948760986328},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07716482877731323},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720479","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720479","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8799999952316284,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1510192432","https://openalex.org/W2014157996","https://openalex.org/W2046571343","https://openalex.org/W2524444794","https://openalex.org/W2553396845","https://openalex.org/W2584889330","https://openalex.org/W2743457035"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2731983891","https://openalex.org/W2407482714","https://openalex.org/W2133871381","https://openalex.org/W4236405143","https://openalex.org/W2285881611","https://openalex.org/W2107315001","https://openalex.org/W2948728072","https://openalex.org/W2543376679","https://openalex.org/W2743881282"],"abstract_inverted_index":{"The":[0,27],"robustness":[1],"of":[2,22,39,45,82,105],"FETs":[3,51,84,112],"to":[4,63,93,115,118],"power-line":[5],"surges":[6,121],"has":[7],"a":[8,76,94,135],"tremendous":[9],"impact":[10],"on":[11],"field":[12],"reliability":[13],"and":[14],"is":[15,33],"an":[16,99],"important":[17,100],"consideration":[18,101],"for":[19,29,36,72,78,102,126,138],"the":[20,40,61,73,79,103,127],"adoption":[21],"new":[23],"technologies":[24],"like":[25],"GaN.":[26,110,144],"methodology":[28,77,137],"silicon":[30],"FETs,":[31,59],"however,":[32],"not":[34],"suitable":[35],"GaN":[37,47,50,83,111],"because":[38],"low":[41],"avalanching":[42],"energy":[43],"capability":[44,56],"present-day":[46],"FETs.":[48],"However,":[49],"have":[52],"better":[53],"transient":[54,88],"overvoltage":[55,89],"than":[57],"Si":[58],"providing":[60],"ability":[62],"operate":[64],"through":[65],"surge":[66,80,96],"without":[67],"avalanching.":[68],"This":[69,130],"paper":[70],"defines,":[71],"first":[74,128],"time,":[75],"rating":[81],"using":[85,109],"their":[86],"superior":[87],"capability.":[90],"It":[91],"leads":[92],"device-level":[95],"parametric":[97],"specification,":[98],"design":[104,142],"surge-robust":[106,139],"power":[107,119,140],"supplies":[108],"are":[113],"shown":[114],"be":[116],"robust":[117],"line":[120],"under":[122],"actual":[123],"operating":[124],"conditions":[125],"time.":[129],"seminal":[131],"work":[132],"results":[133],"in":[134],"comprehensive":[136],"supply":[141],"with":[143]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}