{"id":"https://openalex.org/W2945154544","doi":"https://doi.org/10.1109/irps.2019.8720475","title":"Utilizing a Thorough Understanding of Critical Aging and Failure Mechanisms in finFET Technologies to Enable Reliable High Performance Circuits","display_name":"Utilizing a Thorough Understanding of Critical Aging and Failure Mechanisms in finFET Technologies to Enable Reliable High Performance Circuits","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945154544","doi":"https://doi.org/10.1109/irps.2019.8720475","mag":"2945154544"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720475","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720475","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113899738","display_name":"B. E. Weir","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Bonnie Weir","raw_affiliation_strings":["Broadcom, Inc., Allentown, USA"],"affiliations":[{"raw_affiliation_string":"Broadcom, Inc., Allentown, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030753441","display_name":"V. Shiva Prasad","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vani Prasad","raw_affiliation_strings":["Broadcom, Inc., Allentown, USA"],"affiliations":[{"raw_affiliation_string":"Broadcom, Inc., Allentown, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087530543","display_name":"S. Moinian","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shahriar Moinian","raw_affiliation_strings":["Broadcom, Inc., Allentown, USA"],"affiliations":[{"raw_affiliation_string":"Broadcom, Inc., Allentown, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050643951","display_name":"SangJune Park","orcid":null},"institutions":[{"id":"https://openalex.org/I888729015","display_name":"University of Colorado Colorado Springs","ror":"https://ror.org/054spjc55","country_code":"US","type":"education","lineage":["https://openalex.org/I888729015"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"SangJune Park","raw_affiliation_strings":["Colorado Springs, CO"],"affiliations":[{"raw_affiliation_string":"Colorado Springs, CO","institution_ids":["https://openalex.org/I888729015"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047028924","display_name":"Joseph Blasko","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph Blasko","raw_affiliation_strings":["Broadcom, Inc., Allentown, USA"],"affiliations":[{"raw_affiliation_string":"Broadcom, Inc., Allentown, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045473830","display_name":"Jason I. Brown","orcid":"https://orcid.org/0000-0002-4721-8985"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jason Brown","raw_affiliation_strings":["Fort Collins, CO"],"affiliations":[{"raw_affiliation_string":"Fort Collins, CO","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064321295","display_name":"J. Pallinti","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jayanthi Pallinti","raw_affiliation_strings":["San Jose, CA"],"affiliations":[{"raw_affiliation_string":"San Jose, CA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5113899738"],"corresponding_institution_ids":["https://openalex.org/I4210127325"],"apc_list":null,"apc_paid":null,"fwci":0.1192,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.44015275,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.7137442231178284},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6266006827354431},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.6237506866455078},{"id":"https://openalex.org/keywords/hot-carrier-injection","display_name":"Hot-carrier injection","score":0.5517393350601196},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5341296195983887},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.5275924801826477},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.4903114140033722},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4867725372314453},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4635414779186249},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4315301477909088},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.42158275842666626},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.398494690656662},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.35752570629119873},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33951640129089355},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2752003073692322},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.2252664566040039},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.1648569107055664}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.7137442231178284},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6266006827354431},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.6237506866455078},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.5517393350601196},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5341296195983887},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.5275924801826477},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.4903114140033722},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4867725372314453},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4635414779186249},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4315301477909088},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.42158275842666626},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.398494690656662},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.35752570629119873},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33951640129089355},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2752003073692322},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.2252664566040039},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1648569107055664},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720475","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720475","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1533904353","https://openalex.org/W1544650831","https://openalex.org/W1568279381","https://openalex.org/W1575746255","https://openalex.org/W1593955913","https://openalex.org/W2043440527","https://openalex.org/W2050540090","https://openalex.org/W2115484543","https://openalex.org/W2125049412","https://openalex.org/W2127904821","https://openalex.org/W2524051560","https://openalex.org/W2526090179","https://openalex.org/W2526944027","https://openalex.org/W2526990267","https://openalex.org/W2583494739","https://openalex.org/W2585078402","https://openalex.org/W2591285794","https://openalex.org/W2606845983","https://openalex.org/W2620924984","https://openalex.org/W2621099957","https://openalex.org/W2766160266","https://openalex.org/W2792867185","https://openalex.org/W2796537448","https://openalex.org/W2799722772","https://openalex.org/W2801519812","https://openalex.org/W2801716690","https://openalex.org/W2802538476","https://openalex.org/W2802914086","https://openalex.org/W2898826866","https://openalex.org/W6632639036","https://openalex.org/W6634627913"],"related_works":["https://openalex.org/W2019750744","https://openalex.org/W2341099264","https://openalex.org/W2613535449","https://openalex.org/W2051048385","https://openalex.org/W2104699544","https://openalex.org/W2027836115","https://openalex.org/W1995809631","https://openalex.org/W2050204787","https://openalex.org/W1876124027","https://openalex.org/W2167469933"],"abstract_inverted_index":{"In":[0,54],"order":[1],"to":[2,31,48,100,136],"design":[3,45],"competitive":[4],"circuits":[5],"in":[6,122],"finFET":[7],"technologies,":[8],"a":[9,101],"designer":[10],"must":[11],"intelligently":[12],"navigate":[13],"the":[14,24,44,76],"plethora":[15],"of":[16,60,75,126,132],"reliability":[17,52],"rules,":[18],"As":[19],"an":[20],"example,":[21],"by":[22,113],"understanding":[23],"trade-offs":[25],"between":[26],"transistor":[27],"self-heating,":[28],"Joule-heating":[29],"due":[30],"Irms":[32],"currents":[33],"and":[34,65,80,119,124],"passing":[35],"Iavg":[36],"rules":[37],"at":[38],"higher":[39],"temperatures,":[40],"designers":[41],"can":[42,92],"optimize":[43],"changes":[46],"required":[47],"meet":[49],"overall":[50],"interconnect":[51],"requirements.":[53],"addition,":[55],"accounting":[56,114],"for":[57,90,115],"appropriate":[58],"levels":[59],"Bias":[61],"Temperature":[62],"Instability":[63],"(BTI)":[64],"Hot-Carrier":[66],"Injection":[67],"(HCI)":[68],"aging":[69],"during":[70],"timing":[71],"closure":[72],"requires":[73],"knowledge":[74],"critical":[77],"path":[78],"behavior":[79],"interactions.":[81],"Furthermore,":[82],"voltage":[83],"limits":[84],"based":[85,95],"on":[86,96],"time-dependent-dielectric":[87],"breakdown":[88],"(TDDB)":[89],"gate-dielectrics":[91],"be":[93],"tailored":[94],"total":[97],"area":[98],"exposed":[99],"given":[102],"voltage.":[103],"A":[104],"Design-for-Reliability":[105],"(DFR)":[106],"methodology":[107],"is":[108],"presented,":[109],"which":[110],"prevents":[111],"over-design":[112],"accurate":[116],"mission-mode":[117],"operation,":[118],"enables":[120],"improvements":[121],"performance,":[123],"reduction":[125],"area,":[127],"along":[128],"with":[129,134],"Si-based":[130],"validation":[131],"robustness":[133],"respect":[135],"aging.":[137]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}