{"id":"https://openalex.org/W2946036618","doi":"https://doi.org/10.1109/irps.2019.8720466","title":"Aging-Aware Design Verification Methods Under Real Product Operating Conditions","display_name":"Aging-Aware Design Verification Methods Under Real Product Operating Conditions","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946036618","doi":"https://doi.org/10.1109/irps.2019.8720466","mag":"2946036618"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720466","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720466","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043564438","display_name":"Hyewon Shim","orcid":"https://orcid.org/0000-0003-2132-4701"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hyewon Shim","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022149922","display_name":"Jeong\u2010Min Jo","orcid":"https://orcid.org/0000-0001-8222-8890"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeongmin Jo","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061255515","display_name":"Yoohwan Kim","orcid":"https://orcid.org/0000-0002-7321-9527"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoohwan Kim","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041994091","display_name":"Bong-Yong Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bongyong Jeong","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043820820","display_name":"Minji Shon","orcid":"https://orcid.org/0009-0001-5498-037X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minji Shon","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102017116","display_name":"Hai Jiang","orcid":"https://orcid.org/0000-0002-6653-2304"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hai Jiang","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010124316","display_name":"Sangwoo Pae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangwoo Pae","raw_affiliation_strings":["Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Technology Quality & Reliability, Samsung Electronics, Yongin-si, Gyeonggi-do, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5043564438"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.1192,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.44126065,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8513519763946533},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.8333224058151245},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7126725912094116},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6660813689231873},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.6140369176864624},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5785490870475769},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.5419874787330627},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.47003501653671265},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.46911245584487915},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46063506603240967},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4411103129386902},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.4402483403682709},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.43994003534317017},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.4140388071537018},{"id":"https://openalex.org/keywords/product","display_name":"Product (mathematics)","score":0.4119173586368561},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.40673404932022095},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31707510352134705},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2451956570148468},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21751099824905396}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8513519763946533},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.8333224058151245},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7126725912094116},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6660813689231873},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.6140369176864624},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5785490870475769},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.5419874787330627},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.47003501653671265},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46911245584487915},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46063506603240967},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4411103129386902},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.4402483403682709},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.43994003534317017},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.4140388071537018},{"id":"https://openalex.org/C90673727","wikidata":"https://www.wikidata.org/wiki/Q901718","display_name":"Product (mathematics)","level":2,"score":0.4119173586368561},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.40673404932022095},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31707510352134705},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2451956570148468},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21751099824905396},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720466","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720466","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2173999255","https://openalex.org/W2533493724","https://openalex.org/W4231838056"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2048420745","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W1811213809","https://openalex.org/W2710703523","https://openalex.org/W2126351224","https://openalex.org/W2339472487","https://openalex.org/W2164178706"],"abstract_inverted_index":{"We":[0],"examined":[1],"how":[2],"to":[3],"verify":[4],"the":[5,10,35],"circuit":[6,74],"aging":[7,67,77],"performance":[8],"regarding":[9],"easily":[11],"missed,":[12],"but":[13],"considerable":[14],"stress":[15],"conditions":[16],"of":[17,22,34],"transistors.":[18],"First,":[19],"power-down":[20],"mode":[21],"integrated":[23],"circuits":[24],"may":[25,59],"influence":[26],"unintended":[27],"device":[28],"degradation":[29,56],"and":[30,78],"cause":[31,61],"aging-induced":[32],"mismatching":[33],"circuit.":[36,65],"Next,":[37],"Positive":[38],"Bias":[39],"Temperature":[40],"Instability":[41],"(PBTI)":[42],"for":[43,50,57],"PMOS,":[44],"unlike":[45],"NMOS,":[46],"is":[47],"less":[48],"significant":[49],"device-level":[51],"reliability,":[52],"yet":[53],"some":[54],"PBTI":[55],"PMOS":[58],"still":[60],"risk":[62],"in":[63],"sensitive":[64],"These":[66],"verification":[68],"methods":[69],"developed":[70],"here":[71],"can":[72],"help":[73],"designers":[75],"against":[76],"provide":[79],"more":[80],"robust":[81],"product":[82],"solutions.":[83]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}