{"id":"https://openalex.org/W2946182056","doi":"https://doi.org/10.1109/irps.2019.8720460","title":"A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant","display_name":"A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946182056","doi":"https://doi.org/10.1109/irps.2019.8720460","mag":"2946182056"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720460","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720460","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089665338","display_name":"Jie Zeng","orcid":"https://orcid.org/0000-0003-4486-5041"},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Jie Jack Zeng","raw_affiliation_strings":["Globalfoundries, Singapore"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100552870","display_name":"Ruchil Jain","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Ruchil Jain","raw_affiliation_strings":["Globalfoundries, Singapore"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008009473","display_name":"Kyong Jin Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Kyong Jin Hwang","raw_affiliation_strings":["Globalfoundries, Singapore"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5114101895","display_name":"Robert Gauthier","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Gauthier","raw_affiliation_strings":["Globalfoundries, Essex Junction, Vermont, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Essex Junction, Vermont, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5089665338"],"corresponding_institution_ids":["https://openalex.org/I4210136567"],"apc_list":null,"apc_paid":null,"fwci":0.2385,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53564424,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.9724581837654114},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.8306727409362793},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6963018774986267},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6044151186943054},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5546033382415771},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5253507494926453},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4700426459312439},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4213627576828003},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39464813470840454},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.33974331617355347}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.9724581837654114},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.8306727409362793},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6963018774986267},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6044151186943054},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5546033382415771},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5253507494926453},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4700426459312439},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4213627576828003},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39464813470840454},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.33974331617355347}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720460","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720460","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8199999928474426,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2043801794","https://openalex.org/W2082867458","https://openalex.org/W2083648729","https://openalex.org/W2093207987"],"related_works":["https://openalex.org/W2075382567","https://openalex.org/W1490578062","https://openalex.org/W4223435591","https://openalex.org/W2019344161","https://openalex.org/W2586740853","https://openalex.org/W1496293429","https://openalex.org/W2110615434","https://openalex.org/W2169920509","https://openalex.org/W2520615759","https://openalex.org/W2046430182"],"abstract_inverted_index":{"A":[0],"novel":[1,36],"high":[2,28,61],"voltage":[3,29],"NPN":[4],"(HV-NPN)":[5],"device":[6,38,65],"with":[7,69],"buried":[8],"floating":[9],"P-type":[10],"(BFP)":[11],"implant":[12],"at":[13,58],"collector":[14],"side":[15],"was":[16],"developed":[17],"for":[18],"electrostatic":[19],"discharge":[20],"(ESD)":[21],"protection":[22],"in":[23],"a":[24,47,59],"130nm":[25],"low":[26],"cost":[27],"CMOS":[30],"technology.":[31],"The":[32,64],"characteristics":[33],"of":[34],"the":[35,51,56],"HV-NPN":[37],"using":[39],"transmission":[40],"line":[41],"pulse":[42],"(TLP)":[43],"measurements":[44],"show":[45],"that":[46],"second":[48],"snapback":[49],"enhances":[50],"failure":[52],"current":[53,62],"and":[54],"reduces":[55],"on-resistance":[57],"certain":[60],"levels.":[63],"mechanism":[66],"is":[67],"illustrated":[68],"technology":[70],"computer":[71],"aided":[72],"design":[73],"(TCAD)":[74],"simulation":[75],"results.":[76]},"counts_by_year":[{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}