{"id":"https://openalex.org/W2946199809","doi":"https://doi.org/10.1109/irps.2019.8720458","title":"New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis","display_name":"New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946199809","doi":"https://doi.org/10.1109/irps.2019.8720458","mag":"2946199809"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720458","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720458","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002379934","display_name":"Norbert Herfurth","orcid":"https://orcid.org/0009-0006-4295-4031"},"institutions":[{"id":"https://openalex.org/I4577782","display_name":"Technische Universit\u00e4t Berlin","ror":"https://ror.org/03v4gjf40","country_code":"DE","type":"education","lineage":["https://openalex.org/I4577782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"N. Herfurth","raw_affiliation_strings":["Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany","institution_ids":["https://openalex.org/I4577782"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064958441","display_name":"A. Beyreuther","orcid":null},"institutions":[{"id":"https://openalex.org/I4577782","display_name":"Technische Universit\u00e4t Berlin","ror":"https://ror.org/03v4gjf40","country_code":"DE","type":"education","lineage":["https://openalex.org/I4577782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Beyreuther","raw_affiliation_strings":["Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany","institution_ids":["https://openalex.org/I4577782"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050085504","display_name":"Elham Amini","orcid":"https://orcid.org/0000-0002-4580-4243"},"institutions":[{"id":"https://openalex.org/I4577782","display_name":"Technische Universit\u00e4t Berlin","ror":"https://ror.org/03v4gjf40","country_code":"DE","type":"education","lineage":["https://openalex.org/I4577782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"E. Amini","raw_affiliation_strings":["Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany","institution_ids":["https://openalex.org/I4577782"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030974347","display_name":"Christian Boit","orcid":"https://orcid.org/0000-0002-4169-6943"},"institutions":[{"id":"https://openalex.org/I4577782","display_name":"Technische Universit\u00e4t Berlin","ror":"https://ror.org/03v4gjf40","country_code":"DE","type":"education","lineage":["https://openalex.org/I4577782"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"C. Boit","raw_affiliation_strings":["Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department for Semiconductor Devices, Technical University Berlin, Berlin, Germany","institution_ids":["https://openalex.org/I4577782"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079710213","display_name":"M. Simon-Najasek","orcid":null},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Simon-Najasek","raw_affiliation_strings":["Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062057988","display_name":"S. H\u00fcbner","orcid":"https://orcid.org/0009-0009-6703-0734"},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"S. Hubner","raw_affiliation_strings":["Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083143279","display_name":"Frank Altmann","orcid":"https://orcid.org/0000-0002-0202-1193"},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"F. Altmann","raw_affiliation_strings":["Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Microstructure of Materials and Systems, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054675013","display_name":"Roland Herfurth","orcid":null},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Herfurth","raw_affiliation_strings":["R&D Dept. power generation, Siemens, Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Dept. power generation, Siemens, Berlin, Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100705637","display_name":"Chunlei Wu","orcid":"https://orcid.org/0000-0001-5071-8115"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Wu","raw_affiliation_strings":["IMEC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073310038","display_name":"Ingrid De Wolf","orcid":"https://orcid.org/0000-0003-3822-5953"},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"I. De Wolf","raw_affiliation_strings":["Dept. Materials Engineering, KU Leuven, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. Materials Engineering, KU Leuven, Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080591280","display_name":"Kristof Croes","orcid":"https://orcid.org/0000-0002-3955-0638"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Croes","raw_affiliation_strings":["IMEC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":11,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03598949,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"9"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6902496218681335},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6451255679130554},{"id":"https://openalex.org/keywords/transmission-electron-microscopy","display_name":"Transmission electron microscopy","score":0.5661583542823792},{"id":"https://openalex.org/keywords/scanning-transmission-electron-microscopy","display_name":"Scanning transmission electron microscopy","score":0.5156339406967163},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5037450194358826},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.487751305103302},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4572252333164215},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4570990800857544},{"id":"https://openalex.org/keywords/photon","display_name":"Photon","score":0.4496031403541565},{"id":"https://openalex.org/keywords/scanning-electron-microscope","display_name":"Scanning electron microscope","score":0.4397137463092804},{"id":"https://openalex.org/keywords/insulator","display_name":"Insulator (electricity)","score":0.4381042718887329},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.4132930636405945},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.2761490046977997},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.19170233607292175},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16375717520713806},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1634240448474884},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.11586728692054749}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6902496218681335},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6451255679130554},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.5661583542823792},{"id":"https://openalex.org/C193016168","wikidata":"https://www.wikidata.org/wiki/Q874835","display_name":"Scanning transmission electron microscopy","level":3,"score":0.5156339406967163},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5037450194358826},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.487751305103302},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4572252333164215},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4570990800857544},{"id":"https://openalex.org/C159317903","wikidata":"https://www.wikidata.org/wiki/Q3198","display_name":"Photon","level":2,"score":0.4496031403541565},{"id":"https://openalex.org/C26771246","wikidata":"https://www.wikidata.org/wiki/Q321095","display_name":"Scanning electron microscope","level":2,"score":0.4397137463092804},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.4381042718887329},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.4132930636405945},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2761490046977997},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.19170233607292175},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16375717520713806},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1634240448474884},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11586728692054749},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1109/irps.2019.8720458","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720458","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:fraunhofer.de:N-569173","is_oa":false,"landing_page_url":"http://publica.fraunhofer.de/documents/N-569173.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer IMWS","raw_type":"Conference Paper"},{"id":"pmh:oai:lirias2repo.kuleuven.be:123456789/683169","is_oa":false,"landing_page_url":"https://lirias.kuleuven.be/bitstream/123456789/683169/2/2019_Herfurth_IRPS.pdf","pdf_url":null,"source":{"id":"https://openalex.org/S4306401954","display_name":"Lirias (KU Leuven)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I99464096","host_organization_name":"KU Leuven","host_organization_lineage":["https://openalex.org/I99464096"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE International Reliability Physics Symposium (IRPS), CA, Monterey, 31 March - 4 April 2019","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:publica.fraunhofer.de:publica/406058","is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/406058","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1964716494","https://openalex.org/W1965171205","https://openalex.org/W2034350193","https://openalex.org/W2040816411","https://openalex.org/W2072534458","https://openalex.org/W2088076360","https://openalex.org/W2103565100","https://openalex.org/W2114882541","https://openalex.org/W2525705481","https://openalex.org/W2539561614","https://openalex.org/W2799764442","https://openalex.org/W2891424869","https://openalex.org/W2894560758","https://openalex.org/W2894636531","https://openalex.org/W2902612652","https://openalex.org/W6728668940"],"related_works":["https://openalex.org/W2323556623","https://openalex.org/W2544488502","https://openalex.org/W2581053080","https://openalex.org/W1602302187","https://openalex.org/W2077626292","https://openalex.org/W2148469718","https://openalex.org/W4361853929","https://openalex.org/W2377969116","https://openalex.org/W2353564203","https://openalex.org/W2967472286"],"abstract_inverted_index":{"This":[0],"paper":[1],"provides":[2],"a":[3,28,77,158],"further":[4],"understanding":[5],"of":[6,19,42,47,72,79,111],"soft":[7],"breakdown":[8],"(SBD)":[9],"defects":[10,75],"occurring":[11],"in":[12],"metal":[13,15],"insulator":[14,32],"(MIM)":[16],"back":[17],"end":[18],"line":[20],"(BEOL)":[21],"test":[22,35,138],"structures":[23,36,139,146],"with":[24,76],"copper":[25],"metallization":[26],"and":[27,62,136],"low-k":[29,55,163],"dielectric.":[30],"Metal":[31],"semiconductor":[33],"(MIS)":[34],"are":[37,81,155],"utilised":[38],"to":[39,51,94,103,122,147,160],"take":[40],"advantage":[41],"the":[43,48,54,86,90,105,124,162],"infrared":[44],"transparent":[45],"backside":[46],"silicon":[49],"chip":[50],"directly":[52],"access":[53],"material.":[56],"Transmission":[57],"electron":[58,65],"microscopy":[59],"(TEM)":[60],"images":[61],"scanning":[63],"transmission":[64],"microscope":[66],"energy":[67,109],"dispersive":[68],"X-ray":[69],"(STEM-EDX)":[70],"analysis":[71],"localised":[73],"SBD":[74,91],"resistance":[78],"250G\u03a9":[80],"shown.":[82],"The":[83],"temperature":[84],"within":[85],"defective":[87],"area":[88],"during":[89],"is":[92,101,120],"estimated":[93],"be":[95],">802\u00b0C.":[96],"A":[97],"numerical":[98],"solver":[99],"program":[100],"used":[102],"simulate":[104],"thermal":[106],"conditions.":[107],"An":[108],"density":[110],"at":[112],"least":[113],"2E14":[114],"pW/\u03bc":[115],"m":[116],"<sup":[117],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[118],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[119],"required":[121],"generate":[123],"presented":[125,156],"defect":[126],"morphology.":[127],"Similarities":[128],"between":[129],"photon":[130,151],"emission":[131,152],"measurements":[132,153],"(PEM)":[133],"on":[134,144],"MIM":[135,148],"MIS":[137,145],"allow":[140],"transferring":[141],"findings":[142],"made":[143],"structures.":[149],"Spectral":[150],"(SPEM)":[154],"as":[157],"means":[159],"monitor":[161],"degradation.":[164]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}