{"id":"https://openalex.org/W2946742597","doi":"https://doi.org/10.1109/irps.2019.8720451","title":"On the Effect of NBTI Induced Aging of Power Stage on the Transient Performance of On-Chip Voltage Regulators","display_name":"On the Effect of NBTI Induced Aging of Power Stage on the Transient Performance of On-Chip Voltage Regulators","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946742597","doi":"https://doi.org/10.1109/irps.2019.8720451","mag":"2946742597"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720451","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720451","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009406984","display_name":"Venkata Chaitanya Krishna Chekuri","orcid":"https://orcid.org/0000-0002-3175-3350"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Venkata Chaitanya Krishna Chekuri","raw_affiliation_strings":["School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079752672","display_name":"Arvind Singh","orcid":"https://orcid.org/0000-0001-5238-7196"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arvind Singh","raw_affiliation_strings":["School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069048656","display_name":"Nihar Dasari","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nihar Dasari","raw_affiliation_strings":["School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103714530","display_name":"Saibal Mukhopadhyay","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saibal Mukhopadhyay","raw_affiliation_strings":["School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA"],"affiliations":[{"raw_affiliation_string":"School of Electronics and Computer Engineering, Georgia Institute of Technology, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5009406984"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59868982,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.783498227596283},{"id":"https://openalex.org/keywords/low-dropout-regulator","display_name":"Low-dropout regulator","score":0.7608133554458618},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.682704508304596},{"id":"https://openalex.org/keywords/voltage-regulator","display_name":"Voltage regulator","score":0.6683986783027649},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6126983165740967},{"id":"https://openalex.org/keywords/regulator","display_name":"Regulator","score":0.6054044961929321},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5909126996994019},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.516913890838623},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5067341923713684},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4668218493461609},{"id":"https://openalex.org/keywords/transient-voltage-suppressor","display_name":"Transient voltage suppressor","score":0.459030419588089},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.44304144382476807},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4408002197742462},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.42367038130760193},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42125025391578674},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36651891469955444},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3513554334640503},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3504226803779602},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3001178503036499},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.28261035680770874},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1358148753643036},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.12831583619117737}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.783498227596283},{"id":"https://openalex.org/C140501009","wikidata":"https://www.wikidata.org/wiki/Q6692746","display_name":"Low-dropout regulator","level":5,"score":0.7608133554458618},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.682704508304596},{"id":"https://openalex.org/C110706871","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Voltage regulator","level":3,"score":0.6683986783027649},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6126983165740967},{"id":"https://openalex.org/C6929976","wikidata":"https://www.wikidata.org/wiki/Q3771881","display_name":"Regulator","level":3,"score":0.6054044961929321},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5909126996994019},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.516913890838623},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5067341923713684},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4668218493461609},{"id":"https://openalex.org/C14915586","wikidata":"https://www.wikidata.org/wiki/Q1653998","display_name":"Transient voltage suppressor","level":3,"score":0.459030419588089},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.44304144382476807},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4408002197742462},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.42367038130760193},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42125025391578674},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36651891469955444},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3513554334640503},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3504226803779602},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3001178503036499},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.28261035680770874},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1358148753643036},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12831583619117737},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720451","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720451","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7799999713897705,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1991891926","https://openalex.org/W2012669236","https://openalex.org/W2102913295","https://openalex.org/W2122757690","https://openalex.org/W2798590908","https://openalex.org/W2946609454","https://openalex.org/W2982381884","https://openalex.org/W6762722627"],"related_works":["https://openalex.org/W2116229629","https://openalex.org/W2310938989","https://openalex.org/W1561037416","https://openalex.org/W1975150051","https://openalex.org/W2527109428","https://openalex.org/W2493230321","https://openalex.org/W2946742597","https://openalex.org/W2065384697","https://openalex.org/W2124907472","https://openalex.org/W1956303311"],"abstract_inverted_index":{"This":[0],"paper":[1],"analyzes":[2],"degradation":[3],"of":[4,7,31],"transient":[5],"performance":[6],"on-chip":[8],"voltage":[9,22],"regulators,":[10],"namely,":[11],"a":[12,46],"digital":[13],"low":[14],"dropout":[15],"regulator":[16,23],"(DLDO)":[17],"and":[18],"an":[19,43],"integrated":[20],"inductive":[21],"(IVR),":[24],"due":[25],"to":[26,49,54],"negative-bias-temperature-instability":[27],"(NBTI)":[28],"induced":[29],"aging":[30,52],"power":[32,50],"stages.":[33],"The":[34],"measurement":[35],"results":[36],"from":[37],"130nm":[38],"CMOS":[39],"test-chips":[40],"demonstrate":[41],"that":[42],"IVR":[44],"exhibits":[45],"higher":[47],"tolerance":[48],"stage":[51],"compared":[53],"DLDO.":[55]},"counts_by_year":[{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}