{"id":"https://openalex.org/W2801031576","doi":"https://doi.org/10.1109/irps.2018.8353699","title":"Key parameters driving transistor degradation in advanced strained SiGe channels","display_name":"Key parameters driving transistor degradation in advanced strained SiGe channels","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2801031576","doi":"https://doi.org/10.1109/irps.2018.8353699","mag":"2801031576"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353699","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353699","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"V. Huard","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"V. Huard","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010797182","display_name":"Cheikh Ndiaye","orcid":"https://orcid.org/0000-0003-4198-7385"},"institutions":[{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]},{"id":"https://openalex.org/I3132279224","display_name":"Institut Sup\u00e9rieur de l'\u00c9lectronique et du Num\u00e9rique","ror":"https://ror.org/017h2rd72","country_code":"FR","type":"education","lineage":["https://openalex.org/I3132279224"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Ndiaye","raw_affiliation_strings":["ISEN-REER, IM2NP, Toulon, France","STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"ISEN-REER, IM2NP, Toulon, France","institution_ids":["https://openalex.org/I3132279224","https://openalex.org/I4210112016"]},{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004773669","display_name":"M. Arabi","orcid":"https://orcid.org/0000-0002-3673-8918"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Arabi","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065901381","display_name":"Narendra Parihar","orcid":"https://orcid.org/0000-0003-3191-0333"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"N. Parihar","raw_affiliation_strings":["Department of Electrical Engineering, IIT Bombay, Mumbai, India"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, IIT Bombay, Mumbai, India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087103079","display_name":"X. Federspiel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"X. Federspiel","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026812782","display_name":"S. Mhira","orcid":null},"institutions":[{"id":"https://openalex.org/I3132279224","display_name":"Institut Sup\u00e9rieur de l'\u00c9lectronique et du Num\u00e9rique","ror":"https://ror.org/017h2rd72","country_code":"FR","type":"education","lineage":["https://openalex.org/I3132279224"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Mhira","raw_affiliation_strings":["ISEN-REER, IM2NP, Toulon, France","STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"ISEN-REER, IM2NP, Toulon, France","institution_ids":["https://openalex.org/I3132279224","https://openalex.org/I4210112016"]},{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057107600","display_name":"Souvik Mahapatra","orcid":"https://orcid.org/0000-0002-4516-766X"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S. Mahapatra","raw_affiliation_strings":["Department of Electrical Engineering, IIT Bombay, Mumbai, India"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, IIT Bombay, Mumbai, India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5104439073","display_name":"A. Bravaix","orcid":"https://orcid.org/0000-0002-2308-3537"},"institutions":[{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]},{"id":"https://openalex.org/I3132279224","display_name":"Institut Sup\u00e9rieur de l'\u00c9lectronique et du Num\u00e9rique","ror":"https://ror.org/017h2rd72","country_code":"FR","type":"education","lineage":["https://openalex.org/I3132279224"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Bravaix","raw_affiliation_strings":["ISEN-REER, IM2NP, Toulon, France"],"affiliations":[{"raw_affiliation_string":"ISEN-REER, IM2NP, Toulon, France","institution_ids":["https://openalex.org/I3132279224","https://openalex.org/I4210112016"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210104693"],"apc_list":null,"apc_paid":null,"fwci":3.5325,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.93256929,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"P","last_page":"TX.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9954000115394592,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7393143177032471},{"id":"https://openalex.org/keywords/key","display_name":"Key (lock)","score":0.6691106557846069},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.642885148525238},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5729778409004211},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5489738583564758},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42125558853149414},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4063824415206909},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32222265005111694},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1901337206363678},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06766089797019958},{"id":"https://openalex.org/keywords/computer-security","display_name":"Computer security","score":0.0536876916885376}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7393143177032471},{"id":"https://openalex.org/C26517878","wikidata":"https://www.wikidata.org/wiki/Q228039","display_name":"Key (lock)","level":2,"score":0.6691106557846069},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.642885148525238},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5729778409004211},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5489738583564758},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42125558853149414},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4063824415206909},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32222265005111694},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1901337206363678},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06766089797019958},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0536876916885376}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/irps.2018.8353699","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353699","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-02111112v1","is_oa":false,"landing_page_url":"https://amu.hal.science/hal-02111112","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States","raw_type":"Conference papers"},{"id":"pmh:oai:HAL:hal-03654218v1","is_oa":false,"landing_page_url":"https://hal.science/hal-03654218","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, France. pp.P-TX.4-1-P-TX.4-6, ⟨10.1109/IRPS.2018.8353699⟩","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6100000143051147}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2899084033","https://openalex.org/W2534928293","https://openalex.org/W2140798747","https://openalex.org/W2150099345","https://openalex.org/W2948169060","https://openalex.org/W3004580327","https://openalex.org/W3012501961","https://openalex.org/W2730112582","https://openalex.org/W1490077415"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"new":[3,56],"physical":[4],"explanations":[5],"to":[6,36,38],"explain":[7],"altogether":[8],"the":[9,39,42,46,59,64,77],"impact":[10,30],"of":[11],"compressive":[12,25],"strain,":[13],"germanium":[14],"content":[15,20,29],"(in":[16,21],"channel)":[17],"and":[18,27,52,63],"nitrogen":[19],"gate":[22],"stack).":[23],"Both":[24],"strain":[26],"Ge":[28],"on":[31,58],"NBTI":[32,60],"degradation":[33,61,70],"is":[34,73],"found":[35],"related":[37],"modifications":[40],"in":[41,45],"band":[43],"structure":[44],"channel.":[47],"Excellent":[48],"agreement":[49],"between":[50],"theory":[51],"experimental":[53],"results":[54],"shed":[55],"light":[57],"mechanism":[62],"physics":[65],"lying":[66],"behind.":[67],"Similarly,":[68],"HCI":[69],"process":[71],"dependences":[72],"well":[74],"explained":[75],"by":[76],"energy-driven":[78],"model.":[79]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":16},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":3}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}