{"id":"https://openalex.org/W2801974791","doi":"https://doi.org/10.1109/irps.2018.8353697","title":"Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs","display_name":"Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2801974791","doi":"https://doi.org/10.1109/irps.2018.8353697","mag":"2801974791"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353697","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353697","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005172598","display_name":"Dimitris P. Ioannou","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. P. Ioannou","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075471805","display_name":"Yue Tan","orcid":"https://orcid.org/0000-0002-3020-4077"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Tan","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088335471","display_name":"R. Logan","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Logan","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109175891","display_name":"K. Bandy","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Bandy","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045433922","display_name":"Ravi Achanta","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Achanta","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086131529","display_name":"P.C. Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P.C. Wang","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091309633","display_name":"D. Brochu","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Brochu","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111727024","display_name":"M. Jaff\u00e9","orcid":"https://orcid.org/0000-0003-2554-2562"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Jaffe","raw_affiliation_strings":["GlobalFoundries, Hopewell Junction, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GlobalFoundries, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.5238,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.67131831,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"42","issue":null,"first_page":"P","last_page":"TX.2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.8526387810707092},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7360194325447083},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.6630890369415283},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.623450517654419},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.5530102849006653},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5454973578453064},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5014986991882324},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4927046597003937},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.49081310629844666},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4786321222782135},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46374189853668213},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.43911212682724},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4235239326953888},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.3513004183769226},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.32998141646385193},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.22178146243095398},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19299226999282837},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17867761850357056},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09219339489936829}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.8526387810707092},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7360194325447083},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.6630890369415283},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.623450517654419},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.5530102849006653},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5454973578453064},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5014986991882324},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4927046597003937},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.49081310629844666},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4786321222782135},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46374189853668213},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.43911212682724},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4235239326953888},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.3513004183769226},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.32998141646385193},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.22178146243095398},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19299226999282837},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17867761850357056},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09219339489936829},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353697","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353697","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.41999998688697815,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1528549966","https://openalex.org/W1982922587","https://openalex.org/W2019289317","https://openalex.org/W2116599744","https://openalex.org/W2123988735","https://openalex.org/W2140941636","https://openalex.org/W2158514894","https://openalex.org/W6683137142"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2545707786","https://openalex.org/W2473578222","https://openalex.org/W2264082943","https://openalex.org/W2102078456"],"abstract_inverted_index":{"The":[0,88],"Hot":[1],"Carrier":[2],"Injection":[3],"(HCI)":[4],"effects":[5],"on":[6,50,60],"the":[7,40,56,76,96,99,102,107,113],"DC":[8,108],"and":[9,81,110],"small":[10,103],"signal":[11,104],"RF":[12,41,82,118],"parameters":[13,105,109],"of":[14,95,98],"nanoscale":[15],"Silicon-On-Insulator":[16],"(SOI)":[17],"nMOSFETs":[18],"developed":[19],"for":[20,115],"high":[21],"performance":[22],"low":[23],"noise":[24],"amplifier":[25],"(LNA)":[26],"circuits":[27],"are":[28,85],"investigated.":[29],"In":[30],"recent":[31],"years":[32],"there":[33],"has":[34],"been":[35],"an":[36],"increased":[37],"interest":[38],"in":[39,101],"reliability":[42],"[1-2]":[43],"but":[44],"very":[45],"few":[46],"studies":[47],"have":[48],"focused":[49],"LNA":[51,77,119],"devices":[52],"[3].":[53],"This":[54],"is":[55],"first":[57],"study":[58],"done":[59],"thin-film":[61],"SOI":[62],"nFETs":[63],"scaled":[64],"down":[65],"to":[66,74,106],"35":[67],"nm":[68],"where":[69],"stress":[70],"experiments":[71],"specifically":[72],"designed":[73],"address":[75],"operational":[78],"bias":[79],"conditions":[80],"figures-of-merits":[83],"(FoMs)":[84],"carried":[86],"out.":[87],"obtained":[89],"results":[90],"provide":[91],"a":[92,116],"deeper":[93],"understanding":[94],"correlation":[97],"shift":[100],"thus":[111],"lay":[112],"foundation":[114],"reliability-aware":[117],"design.":[120]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}