{"id":"https://openalex.org/W2801879797","doi":"https://doi.org/10.1109/irps.2018.8353689","title":"Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit","display_name":"Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2801879797","doi":"https://doi.org/10.1109/irps.2018.8353689","mag":"2801879797"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353689","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353689","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102998461","display_name":"Taiki Uemura","orcid":"https://orcid.org/0000-0002-6028-547X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Taiki Uemura","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082747615","display_name":"Soon Young Lee","orcid":"https://orcid.org/0000-0002-3160-577X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Soonyoung Lee","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054282687","display_name":"Dahye Min","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dahye Min","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007759424","display_name":"Ihlhwa Moon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ihlhwa Moon","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101043791","display_name":"Jungman Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungman Lim","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053980697","display_name":"Seungbae Lee","orcid":"https://orcid.org/0000-0003-3368-2506"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungbae Lee","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021180754","display_name":"Hyun Chul Sagong","orcid":"https://orcid.org/0009-0003-0236-6698"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Chul Sagong","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010124316","display_name":"Sangwoo Pae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangwoo Pae","raw_affiliation_strings":["Technology Reliability, Samsung Electronics"],"affiliations":[{"raw_affiliation_string":"Technology Reliability, Samsung Electronics","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5102998461"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":1.545,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.8371662,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"P","last_page":"SE.1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12122","display_name":"Physical Unclonable Functions (PUFs) and Hardware Security","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/combinational-logic","display_name":"Combinational logic","score":0.8241565823554993},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.6401658654212952},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5533688068389893},{"id":"https://openalex.org/keywords/sequential-logic","display_name":"Sequential logic","score":0.5492340922355652},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5210889577865601},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.5140043497085571},{"id":"https://openalex.org/keywords/flip-flop","display_name":"Flip-flop","score":0.4739244878292084},{"id":"https://openalex.org/keywords/logic-synthesis","display_name":"Logic synthesis","score":0.47255441546440125},{"id":"https://openalex.org/keywords/single-event-upset","display_name":"Single event upset","score":0.46992313861846924},{"id":"https://openalex.org/keywords/event","display_name":"Event (particle physics)","score":0.46626195311546326},{"id":"https://openalex.org/keywords/flops","display_name":"FLOPS","score":0.4185383915901184},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35504692792892456},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.31661975383758545},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.270346462726593},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2399187982082367},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21942439675331116},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.21010440587997437},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.17517191171646118},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.05596420168876648}],"concepts":[{"id":"https://openalex.org/C81409106","wikidata":"https://www.wikidata.org/wiki/Q76505","display_name":"Combinational logic","level":3,"score":0.8241565823554993},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.6401658654212952},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5533688068389893},{"id":"https://openalex.org/C187075797","wikidata":"https://www.wikidata.org/wiki/Q173245","display_name":"Sequential logic","level":3,"score":0.5492340922355652},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5210889577865601},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.5140043497085571},{"id":"https://openalex.org/C2781007278","wikidata":"https://www.wikidata.org/wiki/Q183406","display_name":"Flip-flop","level":3,"score":0.4739244878292084},{"id":"https://openalex.org/C157922185","wikidata":"https://www.wikidata.org/wiki/Q173198","display_name":"Logic synthesis","level":3,"score":0.47255441546440125},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.46992313861846924},{"id":"https://openalex.org/C2779662365","wikidata":"https://www.wikidata.org/wiki/Q5416694","display_name":"Event (particle physics)","level":2,"score":0.46626195311546326},{"id":"https://openalex.org/C3826847","wikidata":"https://www.wikidata.org/wiki/Q188768","display_name":"FLOPS","level":2,"score":0.4185383915901184},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35504692792892456},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.31661975383758545},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.270346462726593},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2399187982082367},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21942439675331116},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.21010440587997437},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.17517191171646118},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.05596420168876648},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353689","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353689","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1500230652","https://openalex.org/W1990608831","https://openalex.org/W1993206924","https://openalex.org/W2044936442","https://openalex.org/W2144482650","https://openalex.org/W2527063156","https://openalex.org/W2620829698"],"related_works":["https://openalex.org/W2954273405","https://openalex.org/W2262031297","https://openalex.org/W2024069812","https://openalex.org/W2056378213","https://openalex.org/W2045056374","https://openalex.org/W2298981088","https://openalex.org/W29481652","https://openalex.org/W4238178324","https://openalex.org/W4248668797","https://openalex.org/W2349555365"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"alpha-induced":[3],"single":[4,25],"event":[5,26],"transient":[6],"(SET)":[7],"in":[8,10,20,29],"combinational-logic":[9,21],"10":[11],"nm":[12],"bulk":[13],"FinFET":[14,16],"technology.":[15],"technology":[17],"improves":[18],"SET":[19],"as":[22,24],"well":[23],"upset":[27],"(SEU)":[28],"flip-flops.":[30]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}