{"id":"https://openalex.org/W2801217541","doi":"https://doi.org/10.1109/irps.2018.8353686","title":"Polysilicon resistor stability under voltage stress for safe-operating area characterization","display_name":"Polysilicon resistor stability under voltage stress for safe-operating area characterization","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2801217541","doi":"https://doi.org/10.1109/irps.2018.8353686","mag":"2801217541"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353686","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353686","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110557600","display_name":"Chris Kendrick","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Kendrick","raw_affiliation_strings":["ON Semiconductor, East Greenwich, RI, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, East Greenwich, RI, USA","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069524332","display_name":"Michael J. Cook","orcid":"https://orcid.org/0000-0001-6410-742X"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Cook","raw_affiliation_strings":["ON Semiconductor, East Greenwich, RI, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, East Greenwich, RI, USA","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052885736","display_name":"Jeff Gambino","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J.P. Gambino","raw_affiliation_strings":["ON Semiconductor, Gresham, OR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gresham, OR, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112362995","display_name":"Tracy Myers","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Myers","raw_affiliation_strings":["ON Semiconductor, Gresham, OR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gresham, OR, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112139532","display_name":"J. Slez\u00e1k","orcid":null},"institutions":[{"id":"https://openalex.org/I4210128370","display_name":"ON Semiconductor (Czechia)","ror":"https://ror.org/02jywrv14","country_code":"CZ","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210128370"]}],"countries":["CZ"],"is_corresponding":false,"raw_author_name":"J. Slezak","raw_affiliation_strings":["ON Semiconductor, Roznov pod Radhostem, CZ"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Roznov pod Radhostem, CZ","institution_ids":["https://openalex.org/I4210128370"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010341869","display_name":"Takuichi Hirano","orcid":"https://orcid.org/0000-0003-2167-4293"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Hirano","raw_affiliation_strings":["ON Semiconductor, Gunma, JP"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gunma, JP","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034543415","display_name":"Takayoshi Sano","orcid":"https://orcid.org/0000-0001-9106-3856"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Sano","raw_affiliation_strings":["ON Semiconductor, Gunma, JP"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gunma, JP","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081768649","display_name":"Yuya Watanabe","orcid":"https://orcid.org/0000-0003-3970-1202"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Y. Watanabe","raw_affiliation_strings":["ON Semiconductor, Gunma, JP"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gunma, JP","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088945808","display_name":"Keiko Ozeki","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Ozeki","raw_affiliation_strings":["ON Semiconductor, Gunma, JP"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gunma, JP","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3928,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.62411207,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"P","last_page":"RT.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.904819130897522},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7947030067443848},{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.7433747053146362},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.569733202457428},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5648353695869446},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.5377400517463684},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5018799304962158},{"id":"https://openalex.org/keywords/safe-operating-area","display_name":"Safe operating area","score":0.47650662064552307},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4276142716407776},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3455692529678345},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.20213475823402405},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.15095296502113342},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12571054697036743}],"concepts":[{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.904819130897522},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7947030067443848},{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.7433747053146362},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.569733202457428},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5648353695869446},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5377400517463684},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5018799304962158},{"id":"https://openalex.org/C186339688","wikidata":"https://www.wikidata.org/wiki/Q233523","display_name":"Safe operating area","level":4,"score":0.47650662064552307},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4276142716407776},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3455692529678345},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.20213475823402405},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.15095296502113342},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12571054697036743},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353686","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353686","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5299999713897705,"id":"https://metadata.un.org/sdg/10","display_name":"Reduced inequalities"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1551282821","https://openalex.org/W1653493714","https://openalex.org/W1811358415","https://openalex.org/W1934483518","https://openalex.org/W1976395591","https://openalex.org/W1998215455","https://openalex.org/W2041497556","https://openalex.org/W2080240036","https://openalex.org/W2096386216","https://openalex.org/W2099553168","https://openalex.org/W2109606495","https://openalex.org/W2115759730","https://openalex.org/W2134344835","https://openalex.org/W2168924564","https://openalex.org/W2170856436","https://openalex.org/W2305453364","https://openalex.org/W2535333551","https://openalex.org/W2610673387","https://openalex.org/W2753758886","https://openalex.org/W4248326571","https://openalex.org/W6633054053","https://openalex.org/W6637000688"],"related_works":["https://openalex.org/W2004615523","https://openalex.org/W2055638565","https://openalex.org/W2138118262","https://openalex.org/W2542708587","https://openalex.org/W4229007131","https://openalex.org/W2364197307","https://openalex.org/W4381800218","https://openalex.org/W2368486130","https://openalex.org/W2153975136","https://openalex.org/W4245478697"],"abstract_inverted_index":{"High":[0],"resistance":[1,14,49],"polysilicon":[2],"resistors":[3],"have":[4],"been":[5],"characterized":[6],"by":[7,58],"DC":[8,18],"and":[9,17,19,33,61,89,108],"pulsed":[10,20],"I-V":[11],"sweep":[12],"measurements,":[13],"vs.":[15],"temperature,":[16],"voltage":[21,88],"stress/measurement":[22],"cycling.":[23],"The":[24,82],"combination":[25],"of":[26,67],"these":[27],"measurements":[28],"along":[29],"with":[30],"resistor":[31,114],"linearity":[32],"electro-migration":[34],"rules":[35],"are":[36,62,84],"used":[37,85],"to":[38,65,79,86,112],"determine":[39],"the":[40,48,113],"maximum":[41,100],"safe-operating":[42],"area.":[43],"It":[44],"is":[45],"shown":[46],"that":[47],"shifts":[50],"at":[51,99],"high":[52,80],"current":[53,90],"conditions":[54],"cannot":[55],"be":[56],"explained":[57],"electromigration":[59],"alone,":[60],"instead":[63],"attributed":[64],"migration":[66],"dopants,":[68],"Si,":[69],"or":[70,74],"hydrogen,":[71],"either":[72],"singly":[73],"in":[75],"combination,":[76],"both":[77],"due":[78],"self-heating.":[81],"results":[83],"create":[87],"checks":[91],"within":[92],"SPICE":[93],"models":[94],"allowing":[95],"for":[96],"robust":[97],"design":[98],"operating":[101],"conditions.":[102],"IR-OBIRCH":[103],"physical":[104],"analysis":[105],"was":[106],"performed":[107],"shows":[109],"asymmetric":[110],"changes":[111],"head":[115],"regions.":[116]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}