{"id":"https://openalex.org/W2801773906","doi":"https://doi.org/10.1109/irps.2018.8353663","title":"Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks","display_name":"Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2801773906","doi":"https://doi.org/10.1109/irps.2018.8353663","mag":"2801773906"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353663","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353663","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089039960","display_name":"Fernando Aguirre","orcid":"https://orcid.org/0000-0001-7793-1194"},"institutions":[{"id":"https://openalex.org/I151201029","display_name":"Consejo Nacional de Investigaciones Cient\u00edficas y T\u00e9cnicas","ror":"https://ror.org/03cqe8w59","country_code":"AR","type":"government","lineage":["https://openalex.org/I151201029","https://openalex.org/I4210123736","https://openalex.org/I4387155568"]}],"countries":["AR"],"is_corresponding":false,"raw_author_name":"Fernando L. Aguirre","raw_affiliation_strings":["Electronics Engineering Dept. UTN-FRBA, National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA Nanoelectronics Laboratory, Buenos Aires, Argentina"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Engineering Dept. UTN-FRBA, National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA Nanoelectronics Laboratory, Buenos Aires, Argentina","institution_ids":["https://openalex.org/I151201029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056823655","display_name":"Sebasti\u00e1n Pazos","orcid":"https://orcid.org/0000-0002-7354-4530"},"institutions":[{"id":"https://openalex.org/I151201029","display_name":"Consejo Nacional de Investigaciones Cient\u00edficas y T\u00e9cnicas","ror":"https://ror.org/03cqe8w59","country_code":"AR","type":"government","lineage":["https://openalex.org/I151201029","https://openalex.org/I4210123736","https://openalex.org/I4387155568"]}],"countries":["AR"],"is_corresponding":false,"raw_author_name":"Sebastian M. Pazos","raw_affiliation_strings":["Electronics Engineering Dept. UTN-FRBA, National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA Nanoelectronics Laboratory, Buenos Aires, Argentina"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Engineering Dept. UTN-FRBA, National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA Nanoelectronics Laboratory, Buenos Aires, Argentina","institution_ids":["https://openalex.org/I151201029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088810600","display_name":"F\u00e9lix Palumbo","orcid":"https://orcid.org/0000-0002-7749-5035"},"institutions":[{"id":"https://openalex.org/I151201029","display_name":"Consejo Nacional de Investigaciones Cient\u00edficas y T\u00e9cnicas","ror":"https://ror.org/03cqe8w59","country_code":"AR","type":"government","lineage":["https://openalex.org/I151201029","https://openalex.org/I4210123736","https://openalex.org/I4387155568"]}],"countries":["AR"],"is_corresponding":false,"raw_author_name":"Felix Palumbo","raw_affiliation_strings":["Electronics Engineering Dept. UTN-FRBA, National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA Nanoelectronics Laboratory, Buenos Aires, Argentina"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Engineering Dept. UTN-FRBA, National Scientific and Technical Research Council (CONICET)/GAIANN-CAC-CNEA Nanoelectronics Laboratory, Buenos Aires, Argentina","institution_ids":["https://openalex.org/I151201029"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032631066","display_name":"Sivan Fadida","orcid":"https://orcid.org/0000-0001-9561-1426"},"institutions":[{"id":"https://openalex.org/I174306211","display_name":"Technion \u2013 Israel Institute of Technology","ror":"https://ror.org/03qryx823","country_code":"IL","type":"education","lineage":["https://openalex.org/I174306211"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Sivan Fadida","raw_affiliation_strings":["Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, Israel","institution_ids":["https://openalex.org/I174306211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073826733","display_name":"R. Winter","orcid":null},"institutions":[{"id":"https://openalex.org/I174306211","display_name":"Technion \u2013 Israel Institute of Technology","ror":"https://ror.org/03qryx823","country_code":"IL","type":"education","lineage":["https://openalex.org/I174306211"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Roy Winter","raw_affiliation_strings":["Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, Israel","institution_ids":["https://openalex.org/I174306211"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006073913","display_name":"M. Eizenberg","orcid":null},"institutions":[{"id":"https://openalex.org/I174306211","display_name":"Technion \u2013 Israel Institute of Technology","ror":"https://ror.org/03qryx823","country_code":"IL","type":"education","lineage":["https://openalex.org/I174306211"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Moshe Eizenberg","raw_affiliation_strings":["Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, Israel","institution_ids":["https://openalex.org/I174306211"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03937702,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"P","last_page":"GD.3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.6055145263671875},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.43445637822151184},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36321821808815},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.33542612195014954},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.15424296259880066},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08829060196876526},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.08794081211090088}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6055145263671875},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.43445637822151184},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36321821808815},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.33542612195014954},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.15424296259880066},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08829060196876526},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.08794081211090088}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353663","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353663","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Clean water and sanitation","score":0.550000011920929,"id":"https://metadata.un.org/sdg/6"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1964661285","https://openalex.org/W1979888251","https://openalex.org/W1984772856","https://openalex.org/W2002373957","https://openalex.org/W2037863057","https://openalex.org/W2043044116","https://openalex.org/W2048059081","https://openalex.org/W2049182208","https://openalex.org/W2071442053","https://openalex.org/W2072841047","https://openalex.org/W2128987492","https://openalex.org/W2151658335","https://openalex.org/W2187023566","https://openalex.org/W2336241111","https://openalex.org/W2517815830"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036","https://openalex.org/W3148032049"],"abstract_inverted_index":{"Influence":[0],"of":[1,15,70,80],"forming":[2],"gas":[3],"annealing":[4],"(FGA)":[5],"on":[6],"multi-layered":[7],"Gebased":[8],"MOS":[9],"capacitors":[10],"is":[11,32,65,105],"analyzed":[12],"in":[13,57,92],"terms":[14],"the":[16,35,42,53,71,81,88,93,99,108],"C-V":[17],"hysteresis":[18],"and":[19,27],"flat":[20],"band":[21,90],"voltage":[22],"shifts":[23],"for":[24,59,107],"both":[25],"negative":[26,62],"positive":[28,47,54],"stress":[29,48,60],"fields.":[30],"It":[31,74],"found,":[33],"that":[34,76],"FGA":[36],"(H2/N2)":[37],"treatment":[38],"does":[39],"not":[40],"affect":[41],"electron":[43],"trapping":[44,56],"observed":[45],"at":[46,61],"bias,":[49,63],"while":[50],"it":[51],"reduces":[52],"charge":[55],"high-K/Gestacks":[58],"which":[64],"a":[66,77],"common":[67],"trend":[68],"regardless":[69],"Al2O3/HfMOx":[72],"stack.":[73],"indicates":[75],"considerable":[78],"part":[79],"interface":[82,95],"defects":[83],"with":[84],"energies":[85],"close":[86],"to":[87],"valence":[89],"existing":[91],"oxide-semiconductor":[94],"result":[96],"passivated":[97],"during":[98],"FGA.":[100],"Furthermore,":[101],"no":[102],"time":[103],"dependence":[104],"found":[106],"stressing":[109],"results.":[110]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}