{"id":"https://openalex.org/W2799722772","doi":"https://doi.org/10.1109/irps.2018.8353651","title":"Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors","display_name":"Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2799722772","doi":"https://doi.org/10.1109/irps.2018.8353651","mag":"2799722772"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353651","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353651","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088267249","display_name":"Dongsheng Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"D. S. Huang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053287052","display_name":"J. H. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"J. H. Lee","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039072473","display_name":"Y. S. Tsai","orcid":"https://orcid.org/0000-0002-3838-8181"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y. S. Tsai","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066037916","display_name":"Yuxiao Wang","orcid":"https://orcid.org/0009-0004-9454-5972"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y. F. Wang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104145136","display_name":"Yihong Huang","orcid":"https://orcid.org/0009-0000-4592-4491"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.S. Huang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112250922","display_name":"Chih-Yu Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C.K. Lin","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006123246","display_name":"Ryan Lu","orcid":"https://orcid.org/0000-0003-0922-3342"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ryan Lu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103549167","display_name":"Jun He","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jun He","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5088267249"],"corresponding_institution_ids":["https://openalex.org/I4210120917"],"apc_list":null,"apc_paid":null,"fwci":1.1588,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.79429659,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"6F.7","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7190887928009033},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6063841581344604},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6049163937568665},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5675424933433533},{"id":"https://openalex.org/keywords/hot-carrier-injection","display_name":"Hot-carrier injection","score":0.5591661334037781},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5257652401924133},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5218719244003296},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5138352513313293},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.4375397264957428},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43636614084243774},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42332392930984497},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38038238883018494},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.37171244621276855},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3375188708305359},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2312782108783722},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10427960753440857},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10379219055175781},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.0738934576511383}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7190887928009033},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6063841581344604},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6049163937568665},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5675424933433533},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.5591661334037781},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5257652401924133},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5218719244003296},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5138352513313293},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.4375397264957428},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43636614084243774},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42332392930984497},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38038238883018494},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.37171244621276855},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3375188708305359},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2312782108783722},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10427960753440857},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10379219055175781},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0738934576511383},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353651","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353651","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6299999952316284}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1974338211","https://openalex.org/W2017589892","https://openalex.org/W2020029432","https://openalex.org/W2043440527","https://openalex.org/W2073818373","https://openalex.org/W2086601322","https://openalex.org/W2412394723","https://openalex.org/W2584298940","https://openalex.org/W2585078402"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2843479960","https://openalex.org/W2120314645","https://openalex.org/W4393217857","https://openalex.org/W2043496087","https://openalex.org/W2803645833","https://openalex.org/W2328978473"],"abstract_inverted_index":{"In":[0],"this":[1],"study,":[2],"a":[3,111],"reliability":[4,12],"study":[5],"from":[6],"device,":[7],"circuit":[8,58],"aging,":[9],"and":[10,26,52,69,109],"product":[11],"characterization":[13],"is":[14],"systematically":[15],"presented":[16],"for":[17,31,81],"the":[18,44,61,75,97,107],"state-of-the-art":[19],"7nm":[20,32,56,102],"FinFETs.":[21],"The":[22],"Bias-Temperature":[23],"Instability":[24],"(BTI)":[25],"Hot":[27],"Carrier":[28],"Injection":[29],"(HCI)":[30],"FinFET":[33,39],"are":[34],"compared":[35],"with":[36],"past":[37],"10nm":[38],"devices,":[40],"as":[41,43],"well":[42],"novel":[45],"aging":[46],"framework":[47],"to":[48,95],"estimate":[49],"BTI":[50,70],"recovery":[51],"self-heat":[53],"effect":[54],"in":[55,101],"early":[57],"design.":[59],"Moreover,":[60],"correlation":[62],"between":[63],"SRAM":[64],"static":[65],"noise":[66],"margin":[67],"(SNM)":[68],"induced":[71],"Vt":[72,79],"drift":[73],"consolidates":[74],"domination":[76],"of":[77],"initial":[78],"spread":[80],"SNM":[82],"shift.":[83],"A":[84],"new":[85],"At-Speed":[86],"High-Temperature":[87],"Operating":[88],"Life":[89],"(HTOL)":[90],"test":[91],"could":[92],"be":[93],"able":[94],"trigger":[96],"potential":[98],"Vmin":[99],"tailing":[100],"Logic":[103],"products":[104],"which":[105],"indicates":[106],"weakness":[108],"offers":[110],"promising":[112],"process":[113],"improvement":[114],"direction.":[115]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}