{"id":"https://openalex.org/W2800014667","doi":"https://doi.org/10.1109/irps.2018.8353610","title":"TSV process-induced MOS reliability degradation","display_name":"TSV process-induced MOS reliability degradation","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2800014667","doi":"https://doi.org/10.1109/irps.2018.8353610","mag":"2800014667"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353610","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353610","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100402205","display_name":"Yunlong Li","orcid":"https://orcid.org/0000-0003-4791-4013"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":true,"raw_author_name":"Yunlong Li","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027473851","display_name":"Michele Stucchi","orcid":"https://orcid.org/0000-0002-7848-0492"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Michele Stucchi","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017425497","display_name":"Stefaan Van Huylenbroeck","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Stefaan Van Huylenbroeck","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073931298","display_name":"Geert Van der Plas","orcid":"https://orcid.org/0000-0002-4975-6672"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Geert Van Der Plas","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112402799","display_name":"Gerald Beyer","orcid":"https://orcid.org/0009-0009-6367-3046"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Gerald Beyer","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051712390","display_name":"Eric Beyne","orcid":"https://orcid.org/0000-0002-3096-050X"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Eric Beyne","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080591280","display_name":"Kristof Croes","orcid":"https://orcid.org/0000-0002-3955-0638"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Kristof Croes","raw_affiliation_strings":["3D and Optical I/O Technologies Department Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"3D and Optical I/O Technologies Department Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5100402205"],"corresponding_institution_ids":["https://openalex.org/I4210114974"],"apc_list":null,"apc_paid":null,"fwci":0.3863,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.61711024,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"5B.5","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8022175431251526},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.7636197805404663},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.659377932548523},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6290783882141113},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5769079327583313},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.5649396777153015},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5477194786071777},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5384116172790527},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5028905272483826},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.4557866156101227},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4448170065879822},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4445106089115143},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4396688938140869},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39707618951797485},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3416599631309509},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.18091970682144165},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12199828028678894}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8022175431251526},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.7636197805404663},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.659377932548523},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6290783882141113},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5769079327583313},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.5649396777153015},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5477194786071777},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5384116172790527},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5028905272483826},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.4557866156101227},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4448170065879822},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4445106089115143},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4396688938140869},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39707618951797485},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3416599631309509},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.18091970682144165},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12199828028678894},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353610","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353610","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.550000011920929,"display_name":"Clean water and sanitation","id":"https://metadata.un.org/sdg/6"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W38262683","https://openalex.org/W157852784","https://openalex.org/W2304702132"],"related_works":["https://openalex.org/W4398198689","https://openalex.org/W2354365353","https://openalex.org/W1988437325","https://openalex.org/W2811287415","https://openalex.org/W2354835317","https://openalex.org/W2130152888","https://openalex.org/W2003918017","https://openalex.org/W2171140818","https://openalex.org/W2906102508","https://openalex.org/W4243722550"],"abstract_inverted_index":{"Process-induced":[0],"planar":[1],"MOS":[2,35,92],"capacitor":[3,20,36],"reliability":[4],"degradation":[5,93],"is":[6,94],"investigated":[7],"in":[8,54,71,89],"both":[9],"via-last":[10],"and":[11,29,65],"via-middle":[12,73],"through-silicon":[13],"via":[14,56],"(TSV)":[15],"integration":[16],"flows,":[17],"with":[18],"the":[19,24,30,34,46,55,72,76,91],"electrically":[21],"connected":[22],"to":[23,39],"TSV.":[25],"The":[26,82],"leakage":[27],"current":[28],"breakdown":[31],"voltage":[32],"of":[33,84],"are":[37],"characterized":[38],"detect":[40],"possible":[41],"dielectric":[42,61],"degradations":[43],"caused":[44],"by":[45],"electric":[47],"charges":[48],"generated":[49],"during":[50,59,75],"plasma-based":[51],"processing":[52],"steps:":[53],"last":[57],"flow,":[58,74],"TSV":[60,78],"liner":[62],"dry":[63],"etch":[64],"PVD":[66],"metal":[67],"barrier":[68],"deposition":[69],"steps;":[70],"backside":[77],"dry-etch":[79],"reveal":[80],"step.":[81],"effectiveness":[83],"a":[85],"protection":[86],"PN":[87],"diode":[88],"preventing":[90],"also":[95],"evaluated.":[96]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}