{"id":"https://openalex.org/W2800130417","doi":"https://doi.org/10.1109/irps.2018.8353578","title":"Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress","display_name":"Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2800130417","doi":"https://doi.org/10.1109/irps.2018.8353578","mag":"2800130417"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353578","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353578","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049338234","display_name":"Sol Kyu Lee","orcid":"https://orcid.org/0000-0002-9000-953X"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sol-Kyu Lee","raw_affiliation_strings":["Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112366905","display_name":"Kyung-Tae Jang","orcid":"https://orcid.org/0009-0003-9539-7169"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyung-Tae Jang","raw_affiliation_strings":["Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087327587","display_name":"Seol-Min Yi","orcid":null},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seol-Min Yi","raw_affiliation_strings":["Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083829802","display_name":"Young\u2010Chang Joo","orcid":"https://orcid.org/0000-0003-2562-375X"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Chang Joo","raw_affiliation_strings":["Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5049338234"],"corresponding_institution_ids":["https://openalex.org/I139264467"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03594404,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"115","issue":null,"first_page":"4A.5","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7746706008911133},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7217443585395813},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6332866549491882},{"id":"https://openalex.org/keywords/low-k-dielectric","display_name":"Low-k dielectric","score":0.6159939765930176},{"id":"https://openalex.org/keywords/back-end-of-line","display_name":"Back end of line","score":0.5715568661689758},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.5641502737998962},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4874115288257599},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.46120256185531616},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4546201825141907},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.43501603603363037},{"id":"https://openalex.org/keywords/polarity","display_name":"Polarity (international relations)","score":0.4246494174003601},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2932821214199066},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27399781346321106},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.15542316436767578}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7746706008911133},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7217443585395813},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6332866549491882},{"id":"https://openalex.org/C2779866884","wikidata":"https://www.wikidata.org/wiki/Q1872538","display_name":"Low-k dielectric","level":3,"score":0.6159939765930176},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.5715568661689758},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5641502737998962},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4874115288257599},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.46120256185531616},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4546201825141907},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.43501603603363037},{"id":"https://openalex.org/C2777361361","wikidata":"https://www.wikidata.org/wiki/Q1112585","display_name":"Polarity (international relations)","level":3,"score":0.4246494174003601},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2932821214199066},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27399781346321106},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15542316436767578},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C1491633281","wikidata":"https://www.wikidata.org/wiki/Q7868","display_name":"Cell","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353578","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353578","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6399999856948853,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1569363950","https://openalex.org/W1596610289","https://openalex.org/W1964716494","https://openalex.org/W1965933262","https://openalex.org/W1981452032","https://openalex.org/W1981568650","https://openalex.org/W2018711461","https://openalex.org/W2022165761","https://openalex.org/W2033362548","https://openalex.org/W2046235121","https://openalex.org/W2050320577","https://openalex.org/W2065876623","https://openalex.org/W2069785441","https://openalex.org/W2102320577","https://openalex.org/W2130126544","https://openalex.org/W2152223161","https://openalex.org/W2154200624","https://openalex.org/W2156373378","https://openalex.org/W2164258655","https://openalex.org/W2532934857","https://openalex.org/W2560214818","https://openalex.org/W2584969464","https://openalex.org/W2620886405","https://openalex.org/W6683201339"],"related_works":["https://openalex.org/W1999781939","https://openalex.org/W2036555302","https://openalex.org/W1966474828","https://openalex.org/W2084379018","https://openalex.org/W2024036348","https://openalex.org/W2546473172","https://openalex.org/W2087286400","https://openalex.org/W2159739850","https://openalex.org/W1986727796","https://openalex.org/W2115486002"],"abstract_inverted_index":{"Successive":[0],"breakdown":[1],"(BD)":[2],"has":[3,41],"recently":[4],"been":[5,43],"observed":[6],"during":[7,114],"the":[8,16,33,53,57,70,85,97,102,111,115,120,127],"back":[9],"end":[10],"of":[11,32,69,73,81,122,129],"line":[12],"(BEOL)":[13],"process":[14],"as":[15],"technology":[17,145],"nodes":[18],"progress.":[19],"For":[20],"gate":[21],"dielectrics,":[22,34],"successive":[23,36,54],"BD":[24,37,55,92],"is":[25,50,59,94],"caused":[26],"by":[27,61],"randomly":[28],"generated":[29],"bond":[30,87],"breakages":[31],"whereas":[35],"in":[38,56],"inter-metal":[39],"dielectrics":[40],"not":[42],"sufficiently":[44],"investigated.":[45],"In":[46],"this":[47],"work,":[48],"it":[49],"confirmed":[51],"that":[52,79],"BEOL":[58],"occurred":[60],"Cu":[62,76,82,130],"metallic":[63,77],"filaments":[64,78,124],"using":[65],"a":[66],"facile":[67],"measurement":[68],"temperature":[71],"coefficient":[72],"resistance.":[74],"The":[75,89],"consist":[80],"atoms":[83],"mediate":[84],"uncorrelated":[86],"breakages.":[88],"time-dependent":[90],"dielectric":[91],"lifetime":[93],"improved":[95,141],"under":[96],"bipolar":[98,116],"stress":[99,117],"compared":[100],"to":[101,126,138],"DC":[103],"and":[104,140],"unipolar":[105],"stresses.":[106],"This":[107],"behavior":[108],"occurs":[109],"because":[110],"polarity":[112],"switch":[113],"interferes":[118],"with":[119],"formation":[121],"stable":[123],"due":[125],"occurrence":[128],"atom-to-ion":[131],"conversion.":[132],"Understanding":[133],"these":[134],"phenomena":[135],"can":[136],"lead":[137],"practical":[139],"projections":[142],"for":[143],"future":[144],"nodes.":[146]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}