{"id":"https://openalex.org/W2800331910","doi":"https://doi.org/10.1109/irps.2018.8353542","title":"Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices","display_name":"Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2800331910","doi":"https://doi.org/10.1109/irps.2018.8353542","mag":"2800331910"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353542","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353542","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100320264","display_name":"Wen Liu","orcid":"https://orcid.org/0000-0002-2212-1861"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wen Liu","raw_affiliation_strings":["GLOBALFOUNDRIES, VT"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, VT","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091344436","display_name":"A. Kerber","orcid":"https://orcid.org/0000-0002-8753-873X"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andreas Kerber","raw_affiliation_strings":["GLOBALFOUNDRIES, VT"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, VT","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054475819","display_name":"F Guarin","orcid":"https://orcid.org/0000-0002-0355-4282"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fernando Guarin","raw_affiliation_strings":["GLOBALFOUNDRIES, VT"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, VT","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082043749","display_name":"C. Ortolland","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Claude Ortolland","raw_affiliation_strings":["GLOBALFOUNDRIES, VT"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, VT","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.9166,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.75956544,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":"30","issue":null,"first_page":"2A.4","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8365871906280518},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7826799750328064},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.641909122467041},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.5034372210502625},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4885779321193695},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.48287490010261536},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4813847839832306},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3761192560195923},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3364253640174866},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2104511260986328},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.14961206912994385},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14085108041763306},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.14077365398406982},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.13590779900550842},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08646827936172485}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8365871906280518},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7826799750328064},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.641909122467041},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.5034372210502625},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4885779321193695},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.48287490010261536},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4813847839832306},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3761192560195923},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3364253640174866},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2104511260986328},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14961206912994385},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14085108041763306},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.14077365398406982},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.13590779900550842},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08646827936172485}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353542","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353542","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6600000262260437,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320333435","display_name":"Virginia Agricultural Experiment Station, Virginia Polytechnic Institute and State University","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1490003591","https://openalex.org/W1971395995","https://openalex.org/W1973408995","https://openalex.org/W1989411858","https://openalex.org/W2006445052","https://openalex.org/W2094786483","https://openalex.org/W2096288219","https://openalex.org/W2129167813","https://openalex.org/W2525927747","https://openalex.org/W2613012094","https://openalex.org/W2801029669"],"related_works":["https://openalex.org/W2000833818","https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2765340795","https://openalex.org/W2545707786","https://openalex.org/W2473578222"],"abstract_inverted_index":{"Threshold":[0],"voltage":[1,27,36],"Vt":[2],"tunability":[3],"has":[4],"been":[5],"demonstrated":[6],"for":[7],"a":[8,51],"14nm":[9],"SOI":[10,68],"FinFET":[11],"technology":[12],"with":[13,71,88],"multi-work-function":[14,63],"tuning":[15],"and":[16,29,50,64,78],"cap":[17,65,90],"layer":[18,66,91],"incorporated":[19,67],"high-k":[20],"dielectric.":[21],"BTI":[22],"degradation":[23,82],"is":[24,41,56],"dominated":[25],"by":[26,33,43],"over-drive":[28],"can":[30],"be":[31],"described":[32],"the":[34,44,60,89],"intrinsic":[35],"acceleration":[37],"model.":[38],"TDDB":[39,53,76],"lifetime":[40,54,61,77],"modulated":[42],"initial":[45],"gate":[46],"leakage":[47],"current":[48],"density":[49],"new":[52],"model":[55,59],"developed":[57],"to":[58],"of":[62],"FinFETs.":[69],"Devices":[70],"matching":[72],"VT":[73],"have":[74],"longer":[75],"substantially":[79],"reduced":[80],"PBTI":[81],"while":[83],"NBTI":[84],"does":[85],"benefit":[86],"less":[87],"incorporated.":[92]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}