{"id":"https://openalex.org/W2801765305","doi":"https://doi.org/10.1109/irps.2018.8353541","title":"Self-heating-aware CMOS reliability characterization using degradation maps","display_name":"Self-heating-aware CMOS reliability characterization using degradation maps","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2801765305","doi":"https://doi.org/10.1109/irps.2018.8353541","mag":"2801765305"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353541","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353541","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020854030","display_name":"E. Bury","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"E. Bury","raw_affiliation_strings":["IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069528357","display_name":"Adrian Chasin","orcid":"https://orcid.org/0000-0002-9940-0260"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"A. Chasin","raw_affiliation_strings":["IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058263075","display_name":"B. Kaczer","orcid":"https://orcid.org/0000-0002-1484-4007"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"B. Kaczer","raw_affiliation_strings":["IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022313643","display_name":"Kai-Hsin Chuang","orcid":"https://orcid.org/0000-0002-5834-2324"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"K.-H. Chuang","raw_affiliation_strings":["IMEC, Leuven, Belgium","KU Leuven, ESAT-COSIC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"KU Leuven, ESAT-COSIC, Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068577719","display_name":"J. Franco","orcid":"https://orcid.org/0000-0002-7382-8605"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. Franco","raw_affiliation_strings":["IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105822060","display_name":"Marko Simicic","orcid":"https://orcid.org/0000-0002-3623-1842"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"M. Simicic","raw_affiliation_strings":["IMEC, Leuven, Belgium","KU Leuven, ESAT-COSIC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"KU Leuven, ESAT-COSIC, Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087726615","display_name":"Pieter Weckx","orcid":"https://orcid.org/0000-0003-4579-0571"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"P. Weckx","raw_affiliation_strings":["IMEC, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108124737","display_name":"D. Linten","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"D. Linten","raw_affiliation_strings":["Interuniversitair Micro-Elektronica Centrum, Leuven, Vlaams-Brabant, BE"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Interuniversitair Micro-Elektronica Centrum, Leuven, Vlaams-Brabant, BE","institution_ids":["https://openalex.org/I4210114974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.7022,"has_fulltext":false,"cited_by_count":23,"citation_normalized_percentile":{"value":0.85037936,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"2A.3","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.881181001663208},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7337192893028259},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6398698687553406},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.6110767126083374},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5346186757087708},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.5157135128974915},{"id":"https://openalex.org/keywords/limit","display_name":"Limit (mathematics)","score":0.49360454082489014},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4898082911968231},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4775175154209137},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.4763129949569702},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.4551953077316284},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.43479686975479126},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4265739917755127},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4212478995323181},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.41976967453956604},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39911526441574097},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3787727653980255},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3727981746196747},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2667163610458374},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.256259560585022},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.194585919380188},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18409958481788635},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15288633108139038},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14843758940696716},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.08544135093688965},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.08447369933128357}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.881181001663208},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7337192893028259},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6398698687553406},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.6110767126083374},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5346186757087708},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5157135128974915},{"id":"https://openalex.org/C151201525","wikidata":"https://www.wikidata.org/wiki/Q177239","display_name":"Limit (mathematics)","level":2,"score":0.49360454082489014},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4898082911968231},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4775175154209137},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.4763129949569702},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.4551953077316284},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.43479686975479126},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4265739917755127},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4212478995323181},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.41976967453956604},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39911526441574097},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3787727653980255},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3727981746196747},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2667163610458374},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.256259560585022},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.194585919380188},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18409958481788635},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15288633108139038},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14843758940696716},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.08544135093688965},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.08447369933128357},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353541","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353541","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1484365770","https://openalex.org/W1491999247","https://openalex.org/W1592800232","https://openalex.org/W1973614425","https://openalex.org/W2005442712","https://openalex.org/W2043440527","https://openalex.org/W2131744356","https://openalex.org/W2153685625","https://openalex.org/W2169317892","https://openalex.org/W2524051560","https://openalex.org/W2526221796","https://openalex.org/W2526944027","https://openalex.org/W2621099957","https://openalex.org/W2786998211","https://openalex.org/W6628924559","https://openalex.org/W6635424703","https://openalex.org/W6727616980"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W1968460025","https://openalex.org/W2571059022","https://openalex.org/W3038667834"],"abstract_inverted_index":{"Time-dependent":[0],"variability":[1],"of":[2,32,76,80,103],"modern":[3],"VLSI":[4],"devices,":[5],"due":[6],"to":[7,53],"their":[8],"associated":[9],"degradation":[10,59,91,107],"mechanisms,":[11,84],"such":[12],"as":[13],"Bias":[14],"Temperature":[15],"Instabilities":[16],"(BTI)":[17],"and":[18,55,61,106],"Hot":[19],"Carrier":[20],"Degradation":[21],"(HCD),":[22],"dictates":[23],"a":[24,37,51,73,113],"limit":[25],"on":[26,36,44],"the":[27,33,57,64,81,94,121],"tolerable":[28],"operating":[29,118],"voltage":[30],"conditions":[31,119],"device.":[34],"Based":[35],"large":[38],"statistical":[39],"dataset,":[40],"obtained":[41],"by":[42,100],"measurements":[43],"dedicated":[45],"on-chip":[46],"FET":[47,115],"arrays,":[48],"we":[49,85,110],"propose":[50],"methodology":[52],"identify":[54],"de-convolute":[56],"active":[58],"mechanisms":[60],"subsequently":[62],"calculate":[63],"respective":[65],"lifetimes":[66],"in":[67],"bias":[68,97,123],"{Vg,":[69],"Vd}":[70],"space.":[71,98,124],"Utilizing":[72],"limited":[74],"set":[75],"parameters":[77],"for":[78],"each":[79],"identified":[82],"failure":[83],"show":[86],"excellent":[87],"agreement":[88],"with":[89],"experimental":[90,101],"data":[92],"over":[93],"entire":[95,122],"measurable":[96],"Finally,":[99],"assessment":[102],"thermal":[104],"resistance":[105],"activation":[108],"energies,":[109],"can":[111],"project":[112],"self-heating-aware":[114],"lifetime":[116],"at":[117],"across":[120]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":5}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}