{"id":"https://openalex.org/W1566339227","doi":"https://doi.org/10.1109/irps.2015.7112834","title":"Hot-carrier degradation in single-layer double-gated graphene field-effect transistors","display_name":"Hot-carrier degradation in single-layer double-gated graphene field-effect transistors","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1566339227","doi":"https://doi.org/10.1109/irps.2015.7112834","mag":"1566339227"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112834","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112834","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003579890","display_name":"Yu. Yu. Illarionov","orcid":"https://orcid.org/0000-0003-4323-1389"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]},{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["AT","RU"],"is_corresponding":false,"raw_author_name":"Yu. Yu. Illarionov","raw_affiliation_strings":["Institute for Microelectronics, TU Wien, Austria","Ioffe Physical-Technical Institute, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Austria","institution_ids":["https://openalex.org/I145847075"]},{"raw_affiliation_string":"Ioffe Physical-Technical Institute, Russia","institution_ids":["https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077464890","display_name":"Michael Waltl","orcid":"https://orcid.org/0000-0001-6042-759X"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"M. Waltl","raw_affiliation_strings":["Institute for Microelectronics, TU Wien, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036374616","display_name":"Anderson D. Smith","orcid":"https://orcid.org/0000-0003-4637-8001"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"A.D. Smith","raw_affiliation_strings":["KTH Royal Institute of Technology, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KTH Royal Institute of Technology, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020733066","display_name":"Sam Vaziri","orcid":"https://orcid.org/0000-0003-1234-6060"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"S. Vaziri","raw_affiliation_strings":["KTH Royal Institute of Technology, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KTH Royal Institute of Technology, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059858621","display_name":"Mikael \u00d6stling","orcid":"https://orcid.org/0000-0002-5845-3032"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"M. Ostling","raw_affiliation_strings":["KTH Royal Institute of Technology, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KTH Royal Institute of Technology, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012113227","display_name":"Thomas Mueller","orcid":"https://orcid.org/0000-0003-1343-5719"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Mueller","raw_affiliation_strings":["Institute for Photonics, TU Wien, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Photonics, TU Wien, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087833312","display_name":"Max C. Lemme","orcid":"https://orcid.org/0000-0003-4552-2411"},"institutions":[{"id":"https://openalex.org/I206895457","display_name":"University of Siegen","ror":"https://ror.org/02azyry73","country_code":"DE","type":"education","lineage":["https://openalex.org/I206895457"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M.C. Lemme","raw_affiliation_strings":["University of Siegen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Siegen, Germany","institution_ids":["https://openalex.org/I206895457"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062594496","display_name":"Tibor Grasser","orcid":"https://orcid.org/0000-0001-6536-2238"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Grasser","raw_affiliation_strings":["Institute for Microelectronics, TU Wien, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Austria","institution_ids":["https://openalex.org/I145847075"]}]}],"institutions":[],"countries_distinct_count":4,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1404,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.46514071,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"33","issue":null,"first_page":"XT.2.1","last_page":"XT.2.6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.8186686038970947},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7769466638565063},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6811882853507996},{"id":"https://openalex.org/keywords/polarity","display_name":"Polarity (international relations)","score":0.6715231537818909},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5802208185195923},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5574785470962524},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5315102338790894},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.48237505555152893},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.47416841983795166},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.45790717005729675},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.41162168979644775},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2471034824848175},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.21692204475402832},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.17410659790039062},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1686800718307495},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0524829626083374}],"concepts":[{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.8186686038970947},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7769466638565063},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6811882853507996},{"id":"https://openalex.org/C2777361361","wikidata":"https://www.wikidata.org/wiki/Q1112585","display_name":"Polarity (international relations)","level":3,"score":0.6715231537818909},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5802208185195923},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5574785470962524},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5315102338790894},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.48237505555152893},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47416841983795166},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.45790717005729675},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.41162168979644775},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2471034824848175},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21692204475402832},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.17410659790039062},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1686800718307495},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0524829626083374},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C1491633281","wikidata":"https://www.wikidata.org/wiki/Q7868","display_name":"Cell","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112834","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112834","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1979563063","https://openalex.org/W1991777684","https://openalex.org/W1993787116","https://openalex.org/W2014935324","https://openalex.org/W2041360683","https://openalex.org/W2048682471","https://openalex.org/W2052875334","https://openalex.org/W2058122340","https://openalex.org/W2075156066","https://openalex.org/W2114859176","https://openalex.org/W2121990892","https://openalex.org/W2126945317","https://openalex.org/W2129754640","https://openalex.org/W2142840270","https://openalex.org/W2154858268","https://openalex.org/W2159522985","https://openalex.org/W2163022226","https://openalex.org/W2186695289","https://openalex.org/W2333539861","https://openalex.org/W3100849025","https://openalex.org/W3102620251"],"related_works":["https://openalex.org/W2400337198","https://openalex.org/W2354902965","https://openalex.org/W3156492509","https://openalex.org/W4253101056","https://openalex.org/W1992124208","https://openalex.org/W2072424359","https://openalex.org/W2027914081","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"We":[0],"report":[1],"a":[2,53,67],"first":[3],"study":[4],"of":[5,38,55,76],"hot-carrier":[6],"degradation":[7,69],"(HCD)":[8],"in":[9,19,52,60],"graphene":[10],"field-effect":[11],"transistors":[12],"(GFETs).":[13],"Our":[14],"results":[15,51],"show":[16],"that":[17],"HCD":[18,39,63],"GFETs":[20],"is":[21],"recoverable,":[22],"similarly":[23],"to":[24,47,66],"the":[25,31,36,56,61,74,77],"bias-temperature":[26],"instability":[27],"(BTI).":[28],"Depending":[29],"on":[30],"top":[32],"gate":[33],"bias":[34],"polarity,":[35],"presence":[37],"may":[40],"either":[41],"accelerate":[42],"or":[43],"suppress":[44],"BTI.":[45],"Contrary":[46],"BTI,":[48],"which":[49,70],"mainly":[50],"change":[54],"charged":[57],"trap":[58],"density":[59],"oxide,":[62],"also":[64],"leads":[65],"mobility":[68],"strongly":[71],"correlates":[72],"with":[73],"magnitude":[75],"applied":[78],"stress.":[79]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}