{"id":"https://openalex.org/W1596583050","doi":"https://doi.org/10.1109/irps.2015.7112824","title":"Investigation of single event upset and total ionizing dose in FeRAM for medical electronic tag","display_name":"Investigation of single event upset and total ionizing dose in FeRAM for medical electronic tag","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1596583050","doi":"https://doi.org/10.1109/irps.2015.7112824","mag":"1596583050"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112824","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112824","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102998461","display_name":"Taiki Uemura","orcid":"https://orcid.org/0000-0002-6028-547X"},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"Osaka University","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Taiki Uemura","raw_affiliation_strings":["Department of Information Systems Engineering, Osaka University, Osaka, Japan","Department of Information Systems Engineering, Osaka University, Osaka, Japan#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of Information Systems Engineering, Osaka University, Osaka, Japan","institution_ids":["https://openalex.org/I98285908"]},{"raw_affiliation_string":"Department of Information Systems Engineering, Osaka University, Osaka, Japan#TAB#","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002405139","display_name":"Masanori Hashimoto","orcid":"https://orcid.org/0000-0002-0377-2108"},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"Osaka University","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masanori Hashimoto","raw_affiliation_strings":["Department of Information Systems Engineering, Osaka University, Osaka, Japan","Department of Information Systems Engineering, Osaka University, Osaka, Japan#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of Information Systems Engineering, Osaka University, Osaka, Japan","institution_ids":["https://openalex.org/I98285908"]},{"raw_affiliation_string":"Department of Information Systems Engineering, Osaka University, Osaka, Japan#TAB#","institution_ids":["https://openalex.org/I98285908"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5102998461"],"corresponding_institution_ids":["https://openalex.org/I98285908"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03331378,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"SE.1.1","last_page":"SE.1.5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ionizing-radiation","display_name":"Ionizing radiation","score":0.7547531127929688},{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.6119263172149658},{"id":"https://openalex.org/keywords/single-event-upset","display_name":"Single event upset","score":0.6066866517066956},{"id":"https://openalex.org/keywords/upset","display_name":"Upset","score":0.5961360335350037},{"id":"https://openalex.org/keywords/absorbed-dose","display_name":"Absorbed dose","score":0.555844247341156},{"id":"https://openalex.org/keywords/neutron","display_name":"Neutron","score":0.5000927448272705},{"id":"https://openalex.org/keywords/gamma-irradiation","display_name":"Gamma irradiation","score":0.49651700258255005},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49276474118232727},{"id":"https://openalex.org/keywords/irradiation","display_name":"Irradiation","score":0.465118408203125},{"id":"https://openalex.org/keywords/gamma-ray","display_name":"Gamma ray","score":0.447905033826828},{"id":"https://openalex.org/keywords/dose-rate","display_name":"Dose rate","score":0.4371647238731384},{"id":"https://openalex.org/keywords/radiochemistry","display_name":"Radiochemistry","score":0.4267004132270813},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.4218823313713074},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4211941957473755},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32141509652137756},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2925623655319214},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.2865116596221924},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.202714204788208},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.177228182554245},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16062626242637634}],"concepts":[{"id":"https://openalex.org/C18231593","wikidata":"https://www.wikidata.org/wiki/Q186161","display_name":"Ionizing radiation","level":3,"score":0.7547531127929688},{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.6119263172149658},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.6066866517066956},{"id":"https://openalex.org/C2778002589","wikidata":"https://www.wikidata.org/wiki/Q2406791","display_name":"Upset","level":2,"score":0.5961360335350037},{"id":"https://openalex.org/C151337348","wikidata":"https://www.wikidata.org/wiki/Q215313","display_name":"Absorbed dose","level":3,"score":0.555844247341156},{"id":"https://openalex.org/C152568617","wikidata":"https://www.wikidata.org/wiki/Q2348","display_name":"Neutron","level":2,"score":0.5000927448272705},{"id":"https://openalex.org/C3017806408","wikidata":"https://www.wikidata.org/wiki/Q92772955","display_name":"Gamma irradiation","level":3,"score":0.49651700258255005},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49276474118232727},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.465118408203125},{"id":"https://openalex.org/C7910260","wikidata":"https://www.wikidata.org/wiki/Q11523","display_name":"Gamma ray","level":2,"score":0.447905033826828},{"id":"https://openalex.org/C3017588741","wikidata":"https://www.wikidata.org/wiki/Q3042357","display_name":"Dose rate","level":2,"score":0.4371647238731384},{"id":"https://openalex.org/C177322064","wikidata":"https://www.wikidata.org/wiki/Q750955","display_name":"Radiochemistry","level":1,"score":0.4267004132270813},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.4218823313713074},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4211941957473755},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32141509652137756},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2925623655319214},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.2865116596221924},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.202714204788208},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.177228182554245},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16062626242637634},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.0},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.0},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112824","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112824","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320337512","display_name":"Nuclear Physics","ror":"https://ror.org/02atag894"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W75231976","https://openalex.org/W1973882113","https://openalex.org/W2000258983","https://openalex.org/W2011374286","https://openalex.org/W2039178212","https://openalex.org/W2075622152","https://openalex.org/W2132275681","https://openalex.org/W2132657211","https://openalex.org/W2138527695","https://openalex.org/W2142272198","https://openalex.org/W2160421865","https://openalex.org/W3147845730","https://openalex.org/W3187317723"],"related_works":["https://openalex.org/W2102538861","https://openalex.org/W2765704306","https://openalex.org/W2123934961","https://openalex.org/W1540420234","https://openalex.org/W2161646799","https://openalex.org/W2359969304","https://openalex.org/W764628369","https://openalex.org/W2155141467","https://openalex.org/W1502430142","https://openalex.org/W2128976881"],"abstract_inverted_index":{"We":[0],"investigate":[1],"the":[2,29,53,64,69],"single":[3],"event":[4],"upset":[5],"(SEU)":[6],"and":[7,21,48],"total":[8],"ionizing":[9],"dose":[10,54],"(TID)":[11],"tolerance":[12,50],"of":[13,35,55],"FeRAMs":[14],"fabricated":[15],"in":[16],"180-nm":[17],"technology":[18],"against":[19],"neutron":[20],"gamma-ray":[22,58],"radiation.":[23,59,79],"Our":[24],"irradiation":[25],"tests":[26],"reveal":[27],"that":[28,63],"FeRAM":[30,65],"has":[31],"an":[32],"SEU":[33],"rate":[34],"less":[36],"than":[37],"8.5":[38],"\u00d7":[39],"10":[40],"<sup":[41],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[42],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[43],"FIT/Gbit":[44],"for":[45,57,68],"terrestrial":[46],"neutrons":[47],"a":[49],"up":[51],"to":[52],"100-kGy":[56],"These":[60],"results":[61],"indicate":[62],"is":[66],"suitable":[67],"medical":[70],"electronic":[71],"tags":[72],"which":[73],"require":[74],"sterilization":[75],"with":[76],"25-kGy":[77],"ionization":[78]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}