{"id":"https://openalex.org/W1542148201","doi":"https://doi.org/10.1109/irps.2015.7112821","title":"Reliability of HfAlO&lt;inf&gt;x&lt;/inf&gt; in multi layered gate stack","display_name":"Reliability of HfAlO&lt;inf&gt;x&lt;/inf&gt; in multi layered gate stack","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1542148201","doi":"https://doi.org/10.1109/irps.2015.7112821","mag":"1542148201"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112821","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112821","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085146927","display_name":"Md Nasir Uddin Bhuyian","orcid":"https://orcid.org/0000-0002-5209-8033"},"institutions":[{"id":"https://openalex.org/I118118575","display_name":"New Jersey Institute of Technology","ror":"https://ror.org/05e74xb87","country_code":"US","type":"education","lineage":["https://openalex.org/I118118575"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"M. Nasir Bhuyian","raw_affiliation_strings":["Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA","Department of Electrical and Computer Engineering,  New Jersey Institute of Technology,  Newark,  NJ 07102,  USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA","institution_ids":["https://openalex.org/I118118575"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering,  New Jersey Institute of Technology,  Newark,  NJ 07102,  USA","institution_ids":["https://openalex.org/I118118575"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062951157","display_name":"D. Misra","orcid":"https://orcid.org/0000-0001-6844-6058"},"institutions":[{"id":"https://openalex.org/I118118575","display_name":"New Jersey Institute of Technology","ror":"https://ror.org/05e74xb87","country_code":"US","type":"education","lineage":["https://openalex.org/I118118575"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Misra","raw_affiliation_strings":["Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA","Department of Electrical and Computer Engineering,  New Jersey Institute of Technology,  Newark,  NJ 07102,  USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA","institution_ids":["https://openalex.org/I118118575"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering,  New Jersey Institute of Technology,  Newark,  NJ 07102,  USA","institution_ids":["https://openalex.org/I118118575"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5085146927"],"corresponding_institution_ids":["https://openalex.org/I118118575"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.02452672,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"37","issue":null,"first_page":"PI.3.1","last_page":"PI.3.7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.654388427734375},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5720138549804688},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4405691623687744},{"id":"https://openalex.org/keywords/gate-voltage","display_name":"Gate voltage","score":0.4349806308746338},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.43033623695373535},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.42058122158050537},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.33138108253479004},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.32903116941452026},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31979939341545105},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2383621335029602},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.22797870635986328},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16094383597373962},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13594666123390198},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.08698934316635132}],"concepts":[{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.654388427734375},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5720138549804688},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4405691623687744},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.4349806308746338},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.43033623695373535},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.42058122158050537},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.33138108253479004},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.32903116941452026},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31979939341545105},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2383621335029602},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.22797870635986328},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16094383597373962},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13594666123390198},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.08698934316635132},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112821","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112821","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320324885","display_name":"Nanjing Institute of Technology","ror":"https://ror.org/00n6txq60"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W589995197","https://openalex.org/W1489394941","https://openalex.org/W1494458033","https://openalex.org/W1594371650","https://openalex.org/W1632024277","https://openalex.org/W1653296017","https://openalex.org/W1658993931","https://openalex.org/W1659914018","https://openalex.org/W1900822222","https://openalex.org/W1974272663","https://openalex.org/W1992981913","https://openalex.org/W1994419553","https://openalex.org/W2010763500","https://openalex.org/W2011048136","https://openalex.org/W2019017977","https://openalex.org/W2020736040","https://openalex.org/W2022217622","https://openalex.org/W2036520765","https://openalex.org/W2049433113","https://openalex.org/W2078918226","https://openalex.org/W2080105239","https://openalex.org/W2086126257","https://openalex.org/W2088273074","https://openalex.org/W2095010069","https://openalex.org/W2096873013","https://openalex.org/W2101530249","https://openalex.org/W2128922073","https://openalex.org/W2130572310","https://openalex.org/W2135008013","https://openalex.org/W2139006661","https://openalex.org/W2157887034","https://openalex.org/W2159908743","https://openalex.org/W2162583999","https://openalex.org/W2322656210","https://openalex.org/W2325449883","https://openalex.org/W2596280967","https://openalex.org/W6639528681"],"related_works":["https://openalex.org/W2380576232","https://openalex.org/W2937054111","https://openalex.org/W2066223521","https://openalex.org/W2013178899","https://openalex.org/W373327546","https://openalex.org/W2895652696","https://openalex.org/W4327744209","https://openalex.org/W1994484881","https://openalex.org/W4391771076","https://openalex.org/W1907517463"],"abstract_inverted_index":{"This":[0],"work":[1],"has":[2],"demonstrated":[3],"a":[4,27,127,163],"high":[5],"quality":[6,40],"HfO":[7,22],"<sub":[8,17,23,52,113,145],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[9,18,24,53,114,146],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[10,25],"based":[11],"gate":[12,38,83,123],"stack":[13,39],"by":[14,48],"depositing":[15],"HfAlO":[16,51],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</sub>":[19,54],"along":[20,76],"with":[21,77,91,132,186],"in":[26,68,73,82,102,121,171],"layered":[28],"structure.":[29],"In":[30],"order":[31],"to":[32,70,79,88,138,166],"get":[33],"multifold":[34],"enhancement":[35],"of":[36],"the":[37,50,89,96,103,108,122,172],"both":[41],"Al":[42,93,100],"percentage":[43],"and":[44,57,149,168],"distribution":[45],"were":[46,119],"observed":[47],"varying":[49],"layer":[55,105],"thickness":[56],"it":[58],"was":[59],"found":[60],"that":[61,177],"<;":[62,134,187],"2%":[63,135,188],"Al/(Al+Hf)%":[64],"incorporation":[65],"can":[66],"result":[67],"up":[69,78],"18%":[71],"reduction":[72,81],"average":[74],"EOT":[75],"41%":[80],"leakage":[84,152],"current":[85,153],"as":[86],"compared":[87],"dielectric":[90,158,182],"no":[92],"content.":[94],"On":[95],"other":[97],"hand,":[98],"excess":[99],"presence":[101],"interfacial":[104],"moderately":[106],"increased":[107],"interface":[109],"state":[110],"density":[111],"(D":[112],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">it</sub>":[115],").":[116],"When":[117],"devices":[118,185],"stressed":[120],"injection":[124],"mode":[125],"at":[126],"constant":[128],"voltage":[129,142],"stress,":[130],"dielectrics":[131],"Al/(Hf+Al)%":[133],"showed":[136,162],"resistance":[137],"stress":[139,150],"induced":[140,151],"flat-band":[141],"shift":[143],"(\u0394V":[144],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">FB</sub>":[147],"),":[148],"(SILC).":[154],"The":[155],"time":[156],"dependent":[157],"breakdown":[159,167],"(TDDB)":[160],"characteristics":[161],"higher":[164],"charge":[165],"an":[169,180],"increase":[170],"extracted":[173],"Weibull":[174],"slope":[175],"(\u03b2)":[176],"further":[178],"confirms":[179],"enhanced":[181],"reliability":[183],"for":[184],"Al/(Al+Hf)%.":[189]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}