{"id":"https://openalex.org/W1586712837","doi":"https://doi.org/10.1109/irps.2015.7112806","title":"Wafer-level electromigration for reliability monitoring: Quick-turn electromigration stress with correlation to package-level stress","display_name":"Wafer-level electromigration for reliability monitoring: Quick-turn electromigration stress with correlation to package-level stress","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1586712837","doi":"https://doi.org/10.1109/irps.2015.7112806","mag":"1586712837"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112806","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112806","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052705450","display_name":"Derek W. Slottke","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"D. Slottke","raw_affiliation_strings":["Intel Corporation, Hillsboro, OR, USA","Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015146176","display_name":"R.J. Kamaladasa","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R.J. Kamaladasa","raw_affiliation_strings":["Intel Corporation, Hillsboro, OR, USA","Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066030277","display_name":"M. Harmes","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Harmes","raw_affiliation_strings":["Logic Technology Development Q&R/ Components Research","Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA"],"affiliations":[{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research","institution_ids":[]},{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031139940","display_name":"I. Tsamaret","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"I. Tsamaret","raw_affiliation_strings":["Intel Corporation, Hillsboro, OR, USA","Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017520850","display_name":"M. Kobrinsky","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Kobrinsky","raw_affiliation_strings":["Logic Technology Development Q&R/ Components Research","Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA"],"affiliations":[{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research","institution_ids":[]},{"raw_affiliation_string":"Logic Technology Development Q&R/ Components Research, Intel Corporation, Hillsboro, OR USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025310385","display_name":"Timothy McMullen","orcid":null},"institutions":[{"id":"https://openalex.org/I76705860","display_name":"Cascade Microtech (United States)","ror":"https://ror.org/0401b3q74","country_code":"US","type":"company","lineage":["https://openalex.org/I76705860"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Timothy McMullen","raw_affiliation_strings":["Reliability Test Products Cascade Microtech Incorporated, Beaverton, OR, USA","[Reliability Test Products Cascade Microtech Incorporated, Beaverton, OR, USA]"],"affiliations":[{"raw_affiliation_string":"Reliability Test Products Cascade Microtech Incorporated, Beaverton, OR, USA","institution_ids":["https://openalex.org/I76705860"]},{"raw_affiliation_string":"[Reliability Test Products Cascade Microtech Incorporated, Beaverton, OR, USA]","institution_ids":["https://openalex.org/I76705860"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003877561","display_name":"John Dunklee","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"John Dunklee","raw_affiliation_strings":["Applications Engineering Celadon Systems Incorporated N. St. Paul, MN, USA","Applications Engineering, Celadon Systems Incorporated, N. St. Paul, MN USA"],"affiliations":[{"raw_affiliation_string":"Applications Engineering Celadon Systems Incorporated N. St. Paul, MN, USA","institution_ids":[]},{"raw_affiliation_string":"Applications Engineering, Celadon Systems Incorporated, N. St. Paul, MN USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5052705450"],"corresponding_institution_ids":["https://openalex.org/I1343180700"],"apc_list":null,"apc_paid":null,"fwci":0.1052,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.37821483,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"IT.3.1","last_page":"IT.3.5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.9950233101844788},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.7300206422805786},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7062699794769287},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5500466227531433},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.5469909906387329},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.46783673763275146},{"id":"https://openalex.org/keywords/isothermal-process","display_name":"Isothermal process","score":0.4450932741165161},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4373759329319},{"id":"https://openalex.org/keywords/mean-time-between-failures","display_name":"Mean time between failures","score":0.4328423738479614},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38726866245269775},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.24399727582931519},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2119045853614807},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.17295795679092407},{"id":"https://openalex.org/keywords/failure-rate","display_name":"Failure rate","score":0.13522964715957642},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09765911102294922}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.9950233101844788},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7300206422805786},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7062699794769287},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5500466227531433},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5469909906387329},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.46783673763275146},{"id":"https://openalex.org/C133347239","wikidata":"https://www.wikidata.org/wiki/Q486921","display_name":"Isothermal process","level":2,"score":0.4450932741165161},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4373759329319},{"id":"https://openalex.org/C44154001","wikidata":"https://www.wikidata.org/wiki/Q754940","display_name":"Mean time between failures","level":3,"score":0.4328423738479614},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38726866245269775},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.24399727582931519},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2119045853614807},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.17295795679092407},{"id":"https://openalex.org/C163164238","wikidata":"https://www.wikidata.org/wiki/Q2737027","display_name":"Failure rate","level":2,"score":0.13522964715957642},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09765911102294922},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112806","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112806","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1499697805","https://openalex.org/W2078229240","https://openalex.org/W2146213741","https://openalex.org/W2150840910","https://openalex.org/W2159129609"],"related_works":["https://openalex.org/W2004615523","https://openalex.org/W2055638565","https://openalex.org/W2138118262","https://openalex.org/W2542708587","https://openalex.org/W4229007131","https://openalex.org/W2364197307","https://openalex.org/W4381800218","https://openalex.org/W2165108872","https://openalex.org/W4286566980","https://openalex.org/W2324711075"],"abstract_inverted_index":{"Rapid,":[0],"accurate":[1],"and":[2,13,41,82,104],"flexible":[3],"reliability":[4],"characterization":[5],"capabilities":[6],"are":[7],"important":[8],"tools":[9],"in":[10,57,93,140],"process":[11],"development":[12],"monitoring.":[14],"Electromigration":[15],"evaluation":[16],"has":[17],"largely":[18],"relied":[19],"on":[20,113,134],"packaged":[21],"test":[22,65],"structures":[23,117],"given":[24],"the":[25,58,68,78],"need":[26],"for":[27],"high":[28],"temperatures":[29],"to":[30,44,86,143],"provide":[31],"sufficient":[32],"acceleration.":[33],"However,":[34],"several":[35],"Wafer-Level":[36],"(WL)":[37],"electromigration":[38,64,111],"(EM)":[39],"techniques":[40],"their":[42],"correlation":[43,70],"Package-Level":[45],"(PL)":[46],"tests":[47,112],"have":[48],"been":[49],"reported":[50],"(e.g.":[51],"SWEAT[1],":[52],"[2],":[53],"isothermal[3],":[54],"tests).":[55],"Presented":[56],"this":[59],"paper":[60],"is":[61,122],"a":[62,90],"wafer-level":[63,81],"that":[66],"addresses":[67],"PL":[69,87,108],"issues":[71],"presented":[72],"by":[73],"quick-turn":[74],"tests,":[75],"but":[76],"maintains":[77],"advantages":[79],"of":[80,100],"allows":[83],"quick":[84],"comparison":[85],"baseline":[88],"with":[89,131],"significant":[91],"advantage":[92,139],"time-to-data":[94,141],"over":[95],"PL-EM":[96,145],"testing.":[97],"Statistical":[98],"matching":[99],"initial":[101],"resistance":[102],"(R0)":[103],"Time-to-Failure":[105],"(TTF)":[106],"between":[107],"vs.":[109],"WL":[110],"two":[114],"concurrently":[115],"stressed":[116],"across":[118],"sixteen":[119],"reticle":[120],"locations":[121],"demonstrated.":[123],"This":[124],"WL-EM":[125],"stress":[126],"technique":[127],"provides":[128],"equivalent":[129],"TTF,":[130],"no":[132],"reliance":[133],"extrapolations,":[135],"whilst":[136],"yielding":[137],"an":[138],"relative":[142],"standard":[144],"tests.":[146]},"counts_by_year":[{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}