{"id":"https://openalex.org/W1580230024","doi":"https://doi.org/10.1109/irps.2015.7112795","title":"A novel high level ESD FDNSCR with drain side engineering in PMIC application","display_name":"A novel high level ESD FDNSCR with drain side engineering in PMIC application","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1580230024","doi":"https://doi.org/10.1109/irps.2015.7112795","mag":"1580230024"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112795","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112795","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075158898","display_name":"Yi-Ning He","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["TW","US"],"is_corresponding":true,"raw_author_name":"Yi-Ning He","raw_affiliation_strings":["ESD Engineering Department, United Microelectronics Corp., Taiwan","ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"ESD Engineering Department, United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067939363","display_name":"Jhih-Ming Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]},{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"Jhih-Ming Wang","raw_affiliation_strings":["ESD Engineering Department, United Microelectronics Corp., Taiwan","ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"ESD Engineering Department, United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110257199","display_name":"Tien-Hao Tang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"Tien-Hao Tang","raw_affiliation_strings":["ESD Engineering Department, United Microelectronics Corp., Taiwan","ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"ESD Engineering Department, United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103551482","display_name":"Kuan-Cheng Su","orcid":null},"institutions":[{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]},{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"Kuan-Cheng Su","raw_affiliation_strings":["ESD Engineering Department, United Microelectronics Corp., Taiwan","ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"ESD Engineering Department, United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"ESD Engineering Department, Reliability Technology & Assurance Division, United Microelectronics Corp., Hsinchu Science Park, Taiwan","institution_ids":["https://openalex.org/I77566578"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5075158898"],"corresponding_institution_ids":["https://openalex.org/I4210161555","https://openalex.org/I77566578"],"apc_list":null,"apc_paid":null,"fwci":0.1973,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.56180715,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"EL.4.1","last_page":"EL.4.3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9944999814033508,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.812342643737793},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.6792015433311462},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6613243818283081},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.533542275428772},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5259559154510498},{"id":"https://openalex.org/keywords/root-cause","display_name":"Root cause","score":0.5048850178718567},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4745382070541382},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4650752544403076},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4606596827507019},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4392683207988739},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36990147829055786},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3667224049568176},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3361958861351013},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.29600659012794495},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2551940977573395},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.19145753979682922}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.812342643737793},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6792015433311462},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6613243818283081},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.533542275428772},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5259559154510498},{"id":"https://openalex.org/C84945661","wikidata":"https://www.wikidata.org/wiki/Q7366567","display_name":"Root cause","level":2,"score":0.5048850178718567},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4745382070541382},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4650752544403076},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4606596827507019},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4392683207988739},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36990147829055786},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3667224049568176},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3361958861351013},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.29600659012794495},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2551940977573395},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.19145753979682922},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112795","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112795","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5799999833106995}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1482569829","https://openalex.org/W1972227066","https://openalex.org/W1983317694","https://openalex.org/W2033270101","https://openalex.org/W2067282271","https://openalex.org/W2158240994","https://openalex.org/W2168133025","https://openalex.org/W2535183380","https://openalex.org/W6628651783"],"related_works":["https://openalex.org/W2124694210","https://openalex.org/W2153609444","https://openalex.org/W2544244340","https://openalex.org/W3160715487","https://openalex.org/W1889262262","https://openalex.org/W2157426934","https://openalex.org/W2533798643","https://openalex.org/W1991734107","https://openalex.org/W2046361070","https://openalex.org/W2164598613"],"abstract_inverted_index":{"In":[0],"order":[1],"to":[2,11,43,47,102],"develop":[3],"cost-effective":[4],"System-on-Chip":[5],"(SoC)":[6],"solutions,":[7],"it":[8],"is":[9,100],"important":[10],"implement":[12],"High-Voltage":[13],"(HV)":[14],"tolerant":[15],"devices":[16,88],"using":[17],"standard":[18],"CMOS":[19],"technologies":[20],"for":[21],"varied":[22],"applications,":[23],"such":[24],"as":[25],"display":[26],"and":[27],"LED":[28],"drivers,":[29],"flash":[30],"memories,":[31],"automotive":[32],"applications":[33],"etc.":[34],"However,":[35,69],"the":[36],"on-chip":[37],"ESD":[38,51,66,78,109],"protection":[39],"designs":[40],"are":[41],"required":[42],"provide":[44],"higher":[45],"robustness":[46,67],"prevent":[48],"chip":[49],"from":[50],"damage.":[52],"Silicon":[53,84],"Controlled":[54,85],"Rectifiers":[55],"(SCR)":[56],"have":[57],"been":[58,75],"widely":[59],"used,":[60],"because":[61],"of":[62,97,106],"their":[63],"superior":[64],"area-efficient":[65],"[1-3].":[68],"lower":[70],"failure":[71,99],"current":[72],"It2":[73],"has":[74],"observed":[76],"during":[77,108],"stress":[79],"on":[80],"Field":[81],"Drift":[82],"MOSFET":[83],"Rectifier":[86],"(FDNSCR)":[87],"in":[89],"0.18\u03bcm":[90],"BCD":[91],"epi":[92],"process.":[93],"The":[94],"root":[95],"cause":[96],"early":[98],"related":[101],"low":[103],"turn-on":[104],"efficiency":[105],"SCR":[107],"stress.":[110]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}