{"id":"https://openalex.org/W1577725099","doi":"https://doi.org/10.1109/irps.2015.7112783","title":"Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages","display_name":"Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1577725099","doi":"https://doi.org/10.1109/irps.2015.7112783","mag":"1577725099"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112783","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112783","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074220334","display_name":"Nilesh Goel","orcid":"https://orcid.org/0000-0001-8406-7867"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"N. Goel","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India","Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India","institution_ids":["https://openalex.org/I162827531"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005110984","display_name":"Prashant Dubey","orcid":"https://orcid.org/0000-0001-8159-6528"},"institutions":[{"id":"https://openalex.org/I1335490905","display_name":"Synopsys (Switzerland)","ror":"https://ror.org/03mb54f81","country_code":"CH","type":"company","lineage":["https://openalex.org/I1335490905","https://openalex.org/I4210088951"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"P. Dubey","raw_affiliation_strings":["Synopsys India Pvt. Ltd., NOIDA, India","[Synopsys India Pvt. Ltd., NOIDA, India]"],"affiliations":[{"raw_affiliation_string":"Synopsys India Pvt. Ltd., NOIDA, India","institution_ids":[]},{"raw_affiliation_string":"[Synopsys India Pvt. Ltd., NOIDA, India]","institution_ids":["https://openalex.org/I1335490905"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047909050","display_name":"Jamil Kawa","orcid":null},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Kawa","raw_affiliation_strings":["Synopsys, Inc., Mountain View, California, USA"],"affiliations":[{"raw_affiliation_string":"Synopsys, Inc., Mountain View, California, USA","institution_ids":["https://openalex.org/I4210088951"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057107600","display_name":"Souvik Mahapatra","orcid":"https://orcid.org/0000-0002-4516-766X"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S. Mahapatra","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India","Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India","institution_ids":["https://openalex.org/I162827531"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India","institution_ids":["https://openalex.org/I162827531"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5074220334"],"corresponding_institution_ids":["https://openalex.org/I162827531"],"apc_list":null,"apc_paid":null,"fwci":2.762,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.90838164,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"CA.5.1","last_page":"CA.5.7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8921667337417603},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6823087930679321},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6642832159996033},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5544518232345581},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.48257341980934143},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.4755803644657135},{"id":"https://openalex.org/keywords/process-corners","display_name":"Process corners","score":0.4456709027290344},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3703817129135132},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3380035161972046},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32082319259643555},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28370967507362366},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.2811954617500305},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.27665507793426514},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1744697391986847},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.0987527072429657}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8921667337417603},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6823087930679321},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6642832159996033},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5544518232345581},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.48257341980934143},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.4755803644657135},{"id":"https://openalex.org/C192615534","wikidata":"https://www.wikidata.org/wiki/Q7247268","display_name":"Process corners","level":3,"score":0.4456709027290344},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3703817129135132},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3380035161972046},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32082319259643555},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28370967507362366},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.2811954617500305},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.27665507793426514},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1744697391986847},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0987527072429657},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112783","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112783","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1546318334","https://openalex.org/W1571734645","https://openalex.org/W1965229716","https://openalex.org/W1983465425","https://openalex.org/W1986824285","https://openalex.org/W1988922865","https://openalex.org/W2002612140","https://openalex.org/W2010771403","https://openalex.org/W2025338205","https://openalex.org/W2026605801","https://openalex.org/W2033756824","https://openalex.org/W2048127572","https://openalex.org/W2049623203","https://openalex.org/W2057122426","https://openalex.org/W2057843388","https://openalex.org/W2070706865","https://openalex.org/W2094642598","https://openalex.org/W2102785080","https://openalex.org/W2123278390","https://openalex.org/W2137706187","https://openalex.org/W2139423216","https://openalex.org/W2145077648","https://openalex.org/W2167981182","https://openalex.org/W4242786083","https://openalex.org/W6632716941","https://openalex.org/W6634270460"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2537086382","https://openalex.org/W2605939216","https://openalex.org/W4388937616","https://openalex.org/W2185483573","https://openalex.org/W2738622559","https://openalex.org/W2784027635"],"abstract_inverted_index":{"BSIM-CMG":[0],"based":[1],"HSPICE":[2],"framework":[3],"is":[4,96],"developed":[5],"for":[6,33,41,49,65,76],"simulating":[7],"time-zero":[8,90],"and":[9,31,57,67,91],"Negative":[10],"Bias":[11],"Temperature":[12],"Instability":[13],"(NBTI)":[14],"variability":[15,21,95],"of":[16,22,52,62,83],"SRAM":[17,54,93],"performance":[18],"parameters.":[19],"Time-zero":[20],"Read":[23],"Static":[24,28],"Noise":[25,29],"Margin,":[26],"Hold":[27],"Margin":[30],"Flip-Time":[32],"different":[34],"process":[35,79],"corners":[36],"are":[37,44,74,102],"simulated.":[38],"Models":[39],"used":[40],"SPICE":[42],"simulation":[43],"foundry":[45],"qualified":[46],"sub-20nm":[47],"FinFET":[48],"two":[50],"types":[51],"6T":[53],"cells,":[55],"High-Speed":[56],"High-Density":[58],"cells.":[59],"The":[60,81],"Impact":[61],"stochastic":[63],"BTI":[64],"DC":[66],"AC":[68],"activity":[69],"stress":[70],"on":[71,89],"these":[72],"parameters":[73],"studied":[75],"relevant":[77],"worst-case":[78],"corner.":[80],"impact":[82],"V":[84],"<sub":[85],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[86],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">dd</sub>":[87],"reduction":[88],"post-BTI":[92],"parameter":[94],"also":[97],"studied.":[98],"Critical":[99],"failure":[100],"situations":[101],"identified.":[103]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}