{"id":"https://openalex.org/W1565699260","doi":"https://doi.org/10.1109/irps.2015.7112775","title":"Effects of copper CMP and post clean process on VRDB and TDDB at 28nm and advanced technology node","display_name":"Effects of copper CMP and post clean process on VRDB and TDDB at 28nm and advanced technology node","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1565699260","doi":"https://doi.org/10.1109/irps.2015.7112775","mag":"1565699260"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112775","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112775","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021532479","display_name":"L. C. Hsu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Li Chieh Hsu","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109215479","display_name":"Yu Min Lin","orcid":"https://orcid.org/0009-0007-5425-7492"},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu Min Lin","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009269270","display_name":"Chien Liang Wu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chien Liang Wu","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015955507","display_name":"Wei Kun Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wei Kun Lee","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112031670","display_name":"Yen Chun Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yen Chun Liu","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003194923","display_name":"Cheng Pu Chiu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Cheng Pu Chiu","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041040321","display_name":"H. K. Hsu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hsin Kuo Hsu","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003512746","display_name":"Chun Yi Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun Yi Wang","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001969602","display_name":"Chien\u2010Chung Huang","orcid":"https://orcid.org/0000-0003-3482-2646"},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chien Chung Huang","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110651681","display_name":"Chin Fu Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chin Fu Lin","raw_affiliation_strings":["Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"Advanced Technology Development Division, United Microelectronics Corporation, No 18, Nanke 2nd Rd., Tainan Science Park, Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5021532479"],"corresponding_institution_ids":["https://openalex.org/I4210161555"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.02089187,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"BD.3.1","last_page":"BD.3.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9915000200271606,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/polishing","display_name":"Polishing","score":0.8220906853675842},{"id":"https://openalex.org/keywords/chemical-mechanical-planarization","display_name":"Chemical-mechanical planarization","score":0.7458097338676453},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7092118859291077},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.6719630360603333},{"id":"https://openalex.org/keywords/copper","display_name":"Copper","score":0.6488110423088074},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"Surface roughness","score":0.6056972146034241},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.4725235104560852},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.4563094675540924},{"id":"https://openalex.org/keywords/process-optimization","display_name":"Process optimization","score":0.41102245450019836},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.38069039583206177},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3390430808067322},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32242119312286377},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.29717010259628296},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24863409996032715},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22857648134231567},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.15310978889465332},{"id":"https://openalex.org/keywords/chemical-engineering","display_name":"Chemical engineering","score":0.14155679941177368},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.11975821852684021}],"concepts":[{"id":"https://openalex.org/C138113353","wikidata":"https://www.wikidata.org/wiki/Q611639","display_name":"Polishing","level":2,"score":0.8220906853675842},{"id":"https://openalex.org/C180088628","wikidata":"https://www.wikidata.org/wiki/Q1069404","display_name":"Chemical-mechanical planarization","level":3,"score":0.7458097338676453},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7092118859291077},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.6719630360603333},{"id":"https://openalex.org/C544778455","wikidata":"https://www.wikidata.org/wiki/Q753","display_name":"Copper","level":2,"score":0.6488110423088074},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.6056972146034241},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4725235104560852},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.4563094675540924},{"id":"https://openalex.org/C115952470","wikidata":"https://www.wikidata.org/wiki/Q332172","display_name":"Process optimization","level":2,"score":0.41102245450019836},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.38069039583206177},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3390430808067322},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32242119312286377},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.29717010259628296},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24863409996032715},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22857648134231567},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15310978889465332},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.14155679941177368},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.11975821852684021},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112775","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112775","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.5899999737739563}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1977922735","https://openalex.org/W2017633522","https://openalex.org/W2079589408","https://openalex.org/W2108883070","https://openalex.org/W2111568358","https://openalex.org/W6670284651","https://openalex.org/W6676853614"],"related_works":["https://openalex.org/W2378882722","https://openalex.org/W1983603153","https://openalex.org/W2019750744","https://openalex.org/W2613535449","https://openalex.org/W2051048385","https://openalex.org/W2104699544","https://openalex.org/W2027836115","https://openalex.org/W1995809631","https://openalex.org/W2162808514","https://openalex.org/W2147560625"],"abstract_inverted_index":{"Optimization":[0],"of":[1,21,26,32,45,107],"the":[2,8,37,43,46,49,54,70,105],"polishing":[3,12,47],"and":[4,30,58,73,81],"cleaning":[5,64,79,109],"steps":[6],"during":[7],"copper":[9],"chemical":[10],"mechanical":[11],"(Cu":[13],"CMP)":[14],"process":[15],"can":[16],"be":[17,67,100],"accomplished":[18],"by":[19,69],"modification":[20],"Cu":[22,27,34],"trench":[23],"profile,":[24],"control":[25],"surface":[28],"roughness,":[29],"reduction":[31],"residual":[33],"ions":[35],"on":[36],"ultra-low":[38],"k":[39],"(ULK)":[40],"surface.":[41],"For":[42],"tuning":[44],"process,":[48],"optimized":[50],"profile":[51],"will":[52],"improve":[53],"sheet":[55],"resistance":[56],"(Rs)":[57],"TDDB":[59],"(time-dependent":[60],"dielectric":[61,84],"breakdown).":[62],"The":[63,76],"effectiveness":[65,80],"would":[66],"influenced":[68],"clean":[71,74],"chemicals":[72],"process.":[75],"correlation":[77],"between":[78],"voltage":[82],"ramp":[83],"breakdown":[85],"(VRDB)":[86],"was":[87,97],"investigated.":[88],"In":[89],"addition,":[90],"inductively":[91],"coupled":[92],"plasma":[93],"mass":[94],"spectrometry":[95],"(ICP-MS)":[96],"found":[98],"to":[99],"a":[101],"useful":[102],"tool":[103],"for":[104],"evaluation":[106],"post":[108],"performance.":[110]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}