{"id":"https://openalex.org/W1515091640","doi":"https://doi.org/10.1109/irps.2015.7112747","title":"Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures","display_name":"Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1515091640","doi":"https://doi.org/10.1109/irps.2015.7112747","mag":"1515091640"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112747","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112747","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089303681","display_name":"Milo\u0161 Stanisavljevi\u0107","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":true,"raw_author_name":"Milos Stanisavljevic","raw_affiliation_strings":["IBM Research, Zurich, Switzerland","IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research, Zurich, Switzerland","institution_ids":["https://openalex.org/I4210126328"]},{"raw_affiliation_string":"IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045535112","display_name":"Aravinthan Athmanathan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Aravinthan Athmanathan","raw_affiliation_strings":["IBM Research, Zurich, Switzerland","IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research, Zurich, Switzerland","institution_ids":["https://openalex.org/I4210126328"]},{"raw_affiliation_string":"IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103241728","display_name":"Nikolaos Papandreou","orcid":"https://orcid.org/0000-0001-6979-2171"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Nikolaos Papandreou","raw_affiliation_strings":["IBM Research, Zurich, Switzerland","IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research, Zurich, Switzerland","institution_ids":["https://openalex.org/I4210126328"]},{"raw_affiliation_string":"IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007575599","display_name":"Haralampos Pozidis","orcid":"https://orcid.org/0000-0001-5084-6651"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Haralampos Pozidis","raw_affiliation_strings":["IBM Research, Zurich, Switzerland","IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research, Zurich, Switzerland","institution_ids":["https://openalex.org/I4210126328"]},{"raw_affiliation_string":"IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043271107","display_name":"Evangelos Eleftheriou","orcid":"https://orcid.org/0000-0002-3826-5931"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Evangelos Eleftheriou","raw_affiliation_strings":["IBM Research, Zurich, Switzerland","IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research, Zurich, Switzerland","institution_ids":["https://openalex.org/I4210126328"]},{"raw_affiliation_string":"IBM Research-Zurich , 8803 R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5089303681"],"corresponding_institution_ids":["https://openalex.org/I4210126328"],"apc_list":null,"apc_paid":null,"fwci":2.585,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.89762527,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"5B.6.1","last_page":"5B.6.6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9783999919891357,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.885597288608551},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.7339381575584412},{"id":"https://openalex.org/keywords/resilience","display_name":"Resilience (materials science)","score":0.563032865524292},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5066050291061401},{"id":"https://openalex.org/keywords/computer-data-storage","display_name":"Computer data storage","score":0.4564332067966461},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.44405028223991394},{"id":"https://openalex.org/keywords/metric","display_name":"Metric (unit)","score":0.4320411682128906},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4043654799461365},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37679535150527954},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2744225859642029},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.22267094254493713},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.1775859296321869},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16384091973304749},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15051507949829102}],"concepts":[{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.885597288608551},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.7339381575584412},{"id":"https://openalex.org/C2779585090","wikidata":"https://www.wikidata.org/wiki/Q3457762","display_name":"Resilience (materials science)","level":2,"score":0.563032865524292},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5066050291061401},{"id":"https://openalex.org/C194739806","wikidata":"https://www.wikidata.org/wiki/Q66221","display_name":"Computer data storage","level":2,"score":0.4564332067966461},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.44405028223991394},{"id":"https://openalex.org/C176217482","wikidata":"https://www.wikidata.org/wiki/Q860554","display_name":"Metric (unit)","level":2,"score":0.4320411682128906},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4043654799461365},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37679535150527954},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2744225859642029},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.22267094254493713},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.1775859296321869},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16384091973304749},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15051507949829102},{"id":"https://openalex.org/C21547014","wikidata":"https://www.wikidata.org/wiki/Q1423657","display_name":"Operations management","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112747","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112747","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6899999976158142,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W2007025706","https://openalex.org/W2010795939","https://openalex.org/W2034903856","https://openalex.org/W2036202202","https://openalex.org/W2043221330","https://openalex.org/W2072465842","https://openalex.org/W2073160188","https://openalex.org/W2094043668","https://openalex.org/W2120286148","https://openalex.org/W2122352981","https://openalex.org/W2154229954","https://openalex.org/W2163182174","https://openalex.org/W2208969768","https://openalex.org/W2526202524","https://openalex.org/W6687870087"],"related_works":["https://openalex.org/W2110321764","https://openalex.org/W2089890946","https://openalex.org/W2009116015","https://openalex.org/W2593891726","https://openalex.org/W2016108538","https://openalex.org/W2073160188","https://openalex.org/W2074922484","https://openalex.org/W1966701343","https://openalex.org/W1967147320","https://openalex.org/W3197618755"],"abstract_inverted_index":{"Multilevel-cell":[0],"(MLC)":[1],"storage":[2,25,99,131],"is":[3,26,44,72],"a":[4,50,85],"typical":[5],"way":[6],"for":[7,91,128],"achieving":[8],"higher":[9],"capacity":[10],"and":[11,35,41,68,74,84,100],"thus":[12],"lower":[13],"cost":[14],"per":[15],"bit":[16],"in":[17,63,107,111,132],"memory":[18,22],"technologies.":[19],"In":[20],"phase-change":[21],"(PCM)":[23],"MLC":[24,130],"seriously":[27],"hampered":[28],"by":[29],"the":[30,36,47,64,92,112,118,126],"phenomenon":[31],"of":[32,38,49,59,66,81,114,117],"resistance":[33,83],"drift":[34,67],"impact":[37],"temperature.":[39],"Drift":[40],"temperature":[42,115],"resilience":[43],"achieved":[45,106],"through":[46],"use":[48],"specific":[51],"non-resistance-based":[52],"cellstate":[53],"metric.":[54],"A":[55],"statistical":[56],"experimental":[57],"characterization":[58],"PCM":[60,108,133],"test":[61],"devices":[62],"presence":[65,113],"at":[69],"elevated":[70],"temperatures":[71],"performed,":[73],"I-V":[75],"characteristics":[76],"are":[77],"measured.":[78],"The":[79],"comparison":[80],"conventional":[82],"new":[86],"enhanced":[87],"(eM)":[88],"metric":[89],"demonstrates":[90],"first":[93],"time":[94],"that":[95],"reliable":[96],"2":[97],"bits/cell":[98],"subsequent":[101],"data":[102],"retention":[103],"can":[104],"be":[105],"cell":[109],"arrays":[110],"variation":[116],"50":[119],"\u00b0C":[120],"magnitude.":[121],"This":[122],"development":[123],"opens":[124],"up":[125],"possibility":[127],"practical":[129],"chips.":[134]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":11},{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}