{"id":"https://openalex.org/W1605183180","doi":"https://doi.org/10.1109/irps.2015.7112724","title":"Delay effects and frequency dependence of NBTI with sub-microsecond measurements","display_name":"Delay effects and frequency dependence of NBTI with sub-microsecond measurements","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1605183180","doi":"https://doi.org/10.1109/irps.2015.7112724","mag":"1605183180"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112724","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112724","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066931155","display_name":"Yi-Chun Huang","orcid":"https://orcid.org/0000-0002-4909-5149"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Y.-C. Huang","raw_affiliation_strings":["TQRD","TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"TQRD","institution_ids":[]},{"raw_affiliation_string":"TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083737500","display_name":"Min-Hsiu Hsieh","orcid":"https://orcid.org/0000-0002-3396-8427"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"M.-H. Hsieh","raw_affiliation_strings":["TQRD","TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"TQRD","institution_ids":[]},{"raw_affiliation_string":"TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068123668","display_name":"T.-Y. Yew","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"T.-Y. Yew","raw_affiliation_strings":["TQRD","TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"TQRD","institution_ids":[]},{"raw_affiliation_string":"TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044888122","display_name":"W. Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W. Wang","raw_affiliation_strings":["TQRD","TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"TQRD","institution_ids":[]},{"raw_affiliation_string":"TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035644639","display_name":"D. Maji","orcid":"https://orcid.org/0000-0002-5433-1732"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"D. Maji","raw_affiliation_strings":["TQRD","TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"TQRD","institution_ids":[]},{"raw_affiliation_string":"TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054509797","display_name":"Y.-H. Lee","orcid":"https://orcid.org/0000-0003-3742-3296"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.-H. Lee","raw_affiliation_strings":["TQRD","TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"TQRD","institution_ids":[]},{"raw_affiliation_string":"TQRD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113645948","display_name":"Wen-Shen Chou","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W.-S. Chou","raw_affiliation_strings":["MRSD, Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan, R.O.C","MRSD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"MRSD, Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"MRSD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047515669","display_name":"P.-Z. Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"P.-Z. Kang","raw_affiliation_strings":["MRSD, Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan, R.O.C","MRSD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"MRSD, Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"MRSD, Taiwan Semiconductor Manufacturing Company, Ltd. 121, Park Ave. 3, Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5066931155"],"corresponding_institution_ids":["https://openalex.org/I4210120917"],"apc_list":null,"apc_paid":null,"fwci":0.9864,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.78418942,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"4A.2.1","last_page":"4A.2.5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/microsecond","display_name":"Microsecond","score":0.8597259521484375},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.7320362329483032},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5838680267333984},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.49717000126838684},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4877401292324066},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.45708584785461426},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4557991623878479},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4149032533168793},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.376497745513916},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37464749813079834},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37231776118278503},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35743477940559387},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34019017219543457},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3039359450340271},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21591225266456604},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1900104284286499},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.08745664358139038}],"concepts":[{"id":"https://openalex.org/C34742353","wikidata":"https://www.wikidata.org/wiki/Q842015","display_name":"Microsecond","level":2,"score":0.8597259521484375},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.7320362329483032},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5838680267333984},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.49717000126838684},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4877401292324066},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.45708584785461426},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4557991623878479},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4149032533168793},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.376497745513916},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37464749813079834},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37231776118278503},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35743477940559387},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34019017219543457},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3039359450340271},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21591225266456604},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1900104284286499},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.08745664358139038},{"id":"https://openalex.org/C1276947","wikidata":"https://www.wikidata.org/wiki/Q333","display_name":"Astronomy","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112724","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112724","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5799999833106995}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1971367461","https://openalex.org/W1991891926","https://openalex.org/W2008404612","https://openalex.org/W2021467125","https://openalex.org/W2027591527","https://openalex.org/W2029676009","https://openalex.org/W2049623203","https://openalex.org/W2051747677","https://openalex.org/W2056727633","https://openalex.org/W2062728540","https://openalex.org/W2077922709","https://openalex.org/W2094895952","https://openalex.org/W2096011377","https://openalex.org/W2108698193","https://openalex.org/W2114599766","https://openalex.org/W2139416420","https://openalex.org/W2142133539","https://openalex.org/W2164277202","https://openalex.org/W2167765356","https://openalex.org/W2533685535"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W1967467072","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W1968460025","https://openalex.org/W2571059022"],"abstract_inverted_index":{"Negative":[0],"Bias":[1],"Temperature":[2],"Instability":[3],"(NBTI)":[4],"has":[5,30],"been":[6,31,47],"one":[7],"of":[8,15,22,83,130],"the":[9,34,74,81,101],"major":[10],"challenges":[11],"during":[12],"process":[13],"development":[14],"advanced":[16],"technology.":[17],"In":[18,69],"this":[19,70],"paper,":[20,71],"NBTI":[21,131,144],"High-k/metal":[23],"gate":[24],"(HK/MG)":[25],"in":[26,134],"10nm":[27],"FinFET":[28],"technology":[29],"evaluated.":[32],"For":[33],"first":[35],"time,":[36],"fast":[37],"measurements":[38],"within":[39],"sub-microsecond":[40],"(15ns":[41],"~":[42,78],"1\u03bcs)":[43,108],"delay":[44,85,121,139],"time":[45,52,54,86,122,140],"have":[46],"demonstrated.":[48],"Such":[49],"short":[50,84,106,136],"recovery":[51,102],"(delay":[53],"due":[55],"to":[56,99],"measurement)":[57],"is":[58],"achieved":[59],"through":[60],"built-in":[61],"current":[62],"comparator":[63],"and":[64,80,109,137,152,163],"a":[65],"simple":[66],"state":[67],"machine.":[68],"we":[72],"investigated":[73],"frequency":[75,128],"dependence":[76,129],"(10MHz":[77],"1GHz)":[79],"impacts":[82],"on":[87],"NBTI.":[88],"A":[89],"1024-DUT":[90],"array":[91],"with":[92,118],"inverter-like":[93],"AC":[94],"stress":[95],"[1]":[96],"was":[97],"constructed":[98],"compare":[100],"effects":[103],"between":[104,165],"very":[105],"(<;<;":[107],"long":[110,138],"(10s)":[111],"measurement":[112,120],"time.":[113],"Degradation":[114],"slopes":[115],"(time":[116],"exponents)":[117],"different":[119],"exhibit":[123],"distinct":[124],"values":[125],"while":[126],"similar":[127],"[2]":[132],"exists":[133],"both":[135],"domains.":[141],"The":[142],"key":[143],"indices":[145],"such":[146],"as":[147],"voltage":[148],"acceleration":[149],"factor":[150],"(VAF)":[151],"activation":[153],"energy":[154],"(E":[155],"<sub":[156],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[157],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">a</sub>":[158],")":[159],"were":[160],"also":[161],"extracted":[162],"compared":[164],"test":[166],"structures.":[167]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}