{"id":"https://openalex.org/W2149472303","doi":"https://doi.org/10.1109/irps.2015.7112712","title":"Localized thermal effect of sub-16nm FinFET technologies and its impact on circuit reliability designs and methodologies","display_name":"Localized thermal effect of sub-16nm FinFET technologies and its impact on circuit reliability designs and methodologies","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W2149472303","doi":"https://doi.org/10.1109/irps.2015.7112712","mag":"2149472303"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112712","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112712","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114833607","display_name":"Yongsheng Sun","orcid":"https://orcid.org/0009-0001-4663-8144"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Yongsheng Sun","raw_affiliation_strings":["Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077253447","display_name":"Canhui Zhan","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Canhui Zhan","raw_affiliation_strings":["Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054976374","display_name":"Jianping Guo","orcid":"https://orcid.org/0000-0002-0211-8606"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jianping Guo","raw_affiliation_strings":["Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107923354","display_name":"Yiwei Fu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yiwei Fu","raw_affiliation_strings":["Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100635449","display_name":"Guangming Li","orcid":"https://orcid.org/0000-0002-0281-8258"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Guangming Li","raw_affiliation_strings":["Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110575449","display_name":"Jun Xia","orcid":"https://orcid.org/0000-0002-9942-430X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jun Xia","raw_affiliation_strings":["Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"Reliability Engineering Department, Hisilicon Technologies Co., LTD., Shenzhen, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5114833607"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7891,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.76473704,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"3D.2.1","last_page":"3D.2.6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.8740898370742798},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.837416410446167},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.6551685929298401},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.5244974493980408},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.47965338826179504},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.47891438007354736},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4709421396255493},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.4451083540916443},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.42143696546554565},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28104668855667114},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2700670063495636}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.8740898370742798},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.837416410446167},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.6551685929298401},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.5244974493980408},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.47965338826179504},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.47891438007354736},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4709421396255493},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.4451083540916443},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.42143696546554565},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28104668855667114},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2700670063495636},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112712","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112712","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.46000000834465027}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1580873078","https://openalex.org/W1965229716","https://openalex.org/W1969922173","https://openalex.org/W2026520195","https://openalex.org/W2043440527","https://openalex.org/W2050540090","https://openalex.org/W2118494664","https://openalex.org/W2130611960","https://openalex.org/W2134713198","https://openalex.org/W2139269689","https://openalex.org/W2542728252","https://openalex.org/W6641612266","https://openalex.org/W6680043717","https://openalex.org/W6729038747"],"related_works":["https://openalex.org/W2102295724","https://openalex.org/W2007694591","https://openalex.org/W2114942185","https://openalex.org/W2108010191","https://openalex.org/W1834722398","https://openalex.org/W14579210","https://openalex.org/W2132643932","https://openalex.org/W1729452595","https://openalex.org/W2543864226","https://openalex.org/W1975778413"],"abstract_inverted_index":{"Localized":[0],"Thermal":[1],"Effect":[2],"(LTE,":[3],"i.e.":[4],"self-heating)":[5],"is":[6],"one":[7],"of":[8,13,74,94],"the":[9,30,52,57,61,92,95],"greatest":[10],"reliability":[11,21,100],"concerns":[12],"FinFET":[14,47],"technologies.":[15],"This":[16],"paper":[17],"introduced":[18],"some":[19],"new":[20,53,96],"design":[22,98],"methodologies":[23,54,101],"for":[24,99],"aging":[25],"and":[26,72,81,84,103],"electromigration":[27],"to":[28,55],"address":[29],"LTE":[31,58,87],"effects":[32],"at":[33,105],"circuit":[34,40,62,79],"level.":[35],"An":[36],"industry":[37],"level":[38],"PLL":[39],"designed":[41],"on":[42,60,78],"a":[43],"leading":[44],"foundry's":[45],"sub-16nm":[46],"process":[48],"was":[49],"applied":[50],"with":[51,83],"analyze":[56],"impacts":[59,73],"reliability.":[63],"The":[64],"results":[65],"not":[66],"only":[67],"showed":[68],"very":[69],"different":[70],"behaviors":[71],"temperature":[75],"accelerated":[76],"degradations":[77],"performance":[80],"functionality":[82],"without":[85],"comprehending":[86],"effects,":[88],"but":[89],"also":[90],"demonstrated":[91],"effectiveness":[93],"LTE-aware":[97],"developed":[102],"deployed":[104],"Hisilicon.":[106]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}