{"id":"https://openalex.org/W1534981464","doi":"https://doi.org/10.1109/irps.2015.7112700","title":"An investigation of capacitance aging model for extreme low-k and high-k dielectrics","display_name":"An investigation of capacitance aging model for extreme low-k and high-k dielectrics","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W1534981464","doi":"https://doi.org/10.1109/irps.2015.7112700","mag":"1534981464"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2015.7112700","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112700","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103347256","display_name":"M.N. Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"M. N. Chang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054509797","display_name":"Y.-H. Lee","orcid":"https://orcid.org/0000-0003-3742-3296"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.-H. Lee","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080170617","display_name":"Shi-Shien Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"S. Y. Lee","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088478909","display_name":"Catherine Chiu","orcid":"https://orcid.org/0000-0001-8213-7905"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C. C. Chiu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035644639","display_name":"D. Maji","orcid":"https://orcid.org/0000-0002-5433-1732"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"D. Maji","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087455789","display_name":"Kaijie Wu","orcid":"https://orcid.org/0000-0001-6127-8469"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"K. Wu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, Taiwan 300-77, R.O.C","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5103347256"],"corresponding_institution_ids":["https://openalex.org/I4210120917"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.02341903,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"3A.4.1","last_page":"3A.4.6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.9216296076774597},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6883112788200378},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6378586292266846},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5472620725631714},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.5359234809875488},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4820314645767212},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.45358872413635254},{"id":"https://openalex.org/keywords/diffusion-capacitance","display_name":"Diffusion capacitance","score":0.4532148241996765},{"id":"https://openalex.org/keywords/dipole","display_name":"Dipole","score":0.4526621103286743},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.4480639696121216},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.41277796030044556},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3711010217666626},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36054688692092896},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3450942933559418},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.25422370433807373},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.15111267566680908},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07308775186538696}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.9216296076774597},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6883112788200378},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6378586292266846},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5472620725631714},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.5359234809875488},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4820314645767212},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.45358872413635254},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.4532148241996765},{"id":"https://openalex.org/C173523689","wikidata":"https://www.wikidata.org/wiki/Q215589","display_name":"Dipole","level":2,"score":0.4526621103286743},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.4480639696121216},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.41277796030044556},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3711010217666626},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36054688692092896},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3450942933559418},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.25422370433807373},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.15111267566680908},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07308775186538696},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2015.7112700","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2015.7112700","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1974423278","https://openalex.org/W1995473702","https://openalex.org/W1995487525","https://openalex.org/W2046235121","https://openalex.org/W2077179643","https://openalex.org/W2140755098","https://openalex.org/W2143617159","https://openalex.org/W2163382470","https://openalex.org/W2167585671","https://openalex.org/W6680868794"],"related_works":["https://openalex.org/W3212531278","https://openalex.org/W2099626417","https://openalex.org/W2019514496","https://openalex.org/W3129126528","https://openalex.org/W2354552488","https://openalex.org/W1979448382","https://openalex.org/W2028294037","https://openalex.org/W2287154167","https://openalex.org/W2061854865","https://openalex.org/W2781651239"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"Power":[3],"Law":[4],"model":[5,17],"as":[6,13],"a":[7,14],"function":[8],"of":[9],"voltage":[10],"is":[11,89],"proposed":[12],"new":[15,81],"lifetime":[16],"to":[18],"quantify":[19],"the":[20,38,48,52,57,62,70],"capacitance":[21,39,49,63,102,109],"drift":[22,40,64,103,110],"for":[23,41],"Extreme":[24],"Low-k":[25],"(ELK)":[26],"and":[27,44,51,111],"High-k":[28],"(HK)":[29],"dielectrics.":[30],"We":[31,77],"experimentally":[32],"proved":[33],"that":[34,80],"charge":[35,59],"trapping/detrapping":[36],"governed":[37],"both":[42],"ELK":[43],"HK":[45,92,115],"based":[46],"on":[47],"aging":[50],"conduction":[53],"mechanism":[54],"analysis.":[55],"Through":[56],"trapping":[58],"recovery":[60],"study,":[61],"can":[65],"be":[66],"improved":[67],"by":[68,84],"eliminating":[69],"positive":[71],"or":[72],"negative":[73],"charges":[74,86],"during":[75],"process.":[76],"also":[78,105],"noted":[79],"dipoles":[82],"generated":[83],"trapped":[85],"under":[87],"stress":[88],"higher":[90],"in":[91,97,114],"than":[93],"ELK,":[94],"which":[95],"results":[96],"not":[98],"only":[99],"more":[100],"obvious":[101],"but":[104],"stronger":[106],"correlation":[107],"between":[108],"capacitor":[112],"breakdown":[113],"films.":[116]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}