{"id":"https://openalex.org/W4411233189","doi":"https://doi.org/10.1109/imw61990.2025.11026966","title":"Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs","display_name":"Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs","publication_year":2025,"publication_date":"2025-05-18","ids":{"openalex":"https://openalex.org/W4411233189","doi":"https://doi.org/10.1109/imw61990.2025.11026966"},"language":"en","primary_location":{"id":"doi:10.1109/imw61990.2025.11026966","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw61990.2025.11026966","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053966460","display_name":"Mufeng Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Mufeng Chen","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083445842","display_name":"Luqi Zheng","orcid":"https://orcid.org/0000-0003-2916-2727"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Luqi Zheng","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055167437","display_name":"Jian-Yu Lin","orcid":"https://orcid.org/0000-0002-8800-8714"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jian-Yu Lin","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063222844","display_name":"Peide D. Ye","orcid":"https://orcid.org/0000-0001-8466-9745"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peide D. Ye","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009672380","display_name":"Haitong Li","orcid":"https://orcid.org/0000-0003-3393-9252"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Haitong Li","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA"],"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5053966460"],"corresponding_institution_ids":["https://openalex.org/I219193219"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.1442517,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11263","display_name":"Electromagnetic Simulation and Numerical Methods","score":0.9894000291824341,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11263","display_name":"Electromagnetic Simulation and Numerical Methods","score":0.9894000291824341,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11367","display_name":"Particle accelerators and beam dynamics","score":0.973800003528595,"subfield":{"id":"https://openalex.org/subfields/2202","display_name":"Aerospace Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10346","display_name":"Magnetic confinement fusion research","score":0.9697999954223633,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7241584062576294},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3919556140899658},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3673538565635681},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3645153045654297},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2694280743598938},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.25740745663642883}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7241584062576294},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3919556140899658},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3673538565635681},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3645153045654297},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2694280743598938},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.25740745663642883}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw61990.2025.11026966","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw61990.2025.11026966","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W4253957724"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2899084033","https://openalex.org/W2748952813","https://openalex.org/W2054635671","https://openalex.org/W2545245183","https://openalex.org/W2017425642","https://openalex.org/W2350916061","https://openalex.org/W2952918855","https://openalex.org/W1970117475","https://openalex.org/W4396815615"],"abstract_inverted_index":{"Zeroth-order":[0],"fine-tuning":[1,21],"eliminates":[2],"explicit":[3],"back-propagation":[4],"and":[5,42,99],"reduces":[6],"memory":[7],"overhead":[8],"for":[9,19,60],"large":[10],"language":[11,61],"models":[12],"(LLMs),":[13],"making":[14],"it":[15],"a":[16,47,74],"promising":[17],"approach":[18],"on-device":[20],"tasks.":[22],"However,":[23],"existing":[24],"memory-centric":[25],"accelerators":[26],"fail":[27],"to":[28,34],"fully":[29],"leverage":[30],"these":[31],"benefits":[32,102],"due":[33],"inefficiencies":[35],"in":[36,89],"balancing":[37],"bit":[38,90],"density,":[39],"compute-in-memory":[40,53],"capability,":[41],"endurance-retention":[43],"trade-off.":[44],"We":[45],"present":[46],"reliability-aware,":[48],"analog":[49],"multi-level-cell":[50],"(MLC)":[51],"eDRAM-RRAM":[52],"(CIM)":[54],"solution":[55],"co-designed":[56],"with":[57,73],"zeroth-order":[58],"optimization":[59],"model":[62],"fine-tuning.":[63],"An":[64],"RRAM-assisted":[65],"eDRAM":[66],"MLC":[67,94],"programming":[68],"scheme":[69],"is":[70],"developed,":[71],"along":[72],"process-voltage-temperature":[75],"(PVT)-robust,":[76],"large-sensing-window":[77],"time-to-digital":[78],"converter":[79],"(TDC).":[80],"The":[81],"MLC-eDRAM":[82],"integrating":[83],"two-finger":[84],"MOM":[85],"provides":[86],"12\u00d7":[87],"improvement":[88],"density":[91,98],"over":[92],"state-of-the-art":[93],"design.":[95],"Another":[96],"5\u00d7":[97],"2\u00d7":[100],"retention":[101],"are":[103],"gained":[104],"by":[105],"adopting":[106],"BEOL":[107],"In<inf":[108],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[109,111],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>O<inf":[110],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[112],"FETs.":[113]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}