{"id":"https://openalex.org/W4411233219","doi":"https://doi.org/10.1109/imw61990.2025.11026951","title":"First Demonstration of Threshold Voltage Modeling in Multi-Hole V-NAND Flash Architecture with Noncircular Channel Hole Profiles","display_name":"First Demonstration of Threshold Voltage Modeling in Multi-Hole V-NAND Flash Architecture with Noncircular Channel Hole Profiles","publication_year":2025,"publication_date":"2025-05-18","ids":{"openalex":"https://openalex.org/W4411233219","doi":"https://doi.org/10.1109/imw61990.2025.11026951"},"language":"en","primary_location":{"id":"doi:10.1109/imw61990.2025.11026951","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw61990.2025.11026951","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001470600","display_name":"Chanyang Park","orcid":"https://orcid.org/0000-0002-7628-1633"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Chanyang Park","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055989471","display_name":"Min-Kyu Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min-Kyu Jeong","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056282743","display_name":"Taein Lee","orcid":"https://orcid.org/0000-0002-2000-2586"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taein Lee","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100693838","display_name":"Sejun Park","orcid":"https://orcid.org/0000-0003-4617-8771"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sejun Park","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100418709","display_name":"Jung Hoon Lee","orcid":"https://orcid.org/0000-0003-3432-4487"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung Hoon Lee","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100422918","display_name":"Yujin Lee","orcid":"https://orcid.org/0000-0003-2373-6291"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yujin Lee","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081078847","display_name":"Seungwan Hong","orcid":"https://orcid.org/0000-0001-8560-7925"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwan Hong","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063428981","display_name":"Sung Hoi Hur","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung Hoi Hur","raw_affiliation_strings":["Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co.,Device Solutions,Hwaseong,South Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5001470600"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.7467,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.73457256,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.8184686899185181},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.6501451730728149},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5631053447723389},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.5565379858016968},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5086461305618286},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4545144736766815},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4224252998828888},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40081992745399475},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3712214231491089},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.30313193798065186},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.30196255445480347},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.19041979312896729},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.18623825907707214},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17082267999649048},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10473954677581787}],"concepts":[{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.8184686899185181},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6501451730728149},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5631053447723389},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.5565379858016968},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5086461305618286},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4545144736766815},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4224252998828888},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40081992745399475},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3712214231491089},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.30313193798065186},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.30196255445480347},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.19041979312896729},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.18623825907707214},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17082267999649048},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10473954677581787}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw61990.2025.11026951","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw61990.2025.11026951","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/11","score":0.4399999976158142,"display_name":"Sustainable cities and communities"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1653864426","https://openalex.org/W2014721438","https://openalex.org/W2085355957","https://openalex.org/W2113143253","https://openalex.org/W2114803257","https://openalex.org/W2135288278","https://openalex.org/W3005597746","https://openalex.org/W3036816830","https://openalex.org/W4254227808","https://openalex.org/W4281568781","https://openalex.org/W4316035283","https://openalex.org/W6682504405"],"related_works":["https://openalex.org/W2385875016","https://openalex.org/W2072593933","https://openalex.org/W2376165157","https://openalex.org/W2800677231","https://openalex.org/W2289495474","https://openalex.org/W35645027","https://openalex.org/W2054139911","https://openalex.org/W2162027152","https://openalex.org/W2489439822","https://openalex.org/W4237143391"],"abstract_inverted_index":{"A":[0],"predictive":[1],"3D":[2,8],"parasitic":[3],"capacitance":[4],"modeling":[5],"for":[6],"multi-hole":[7],"vertical":[9],"NAND":[10],"(V-NAND)":[11],"is":[12],"first":[13],"suggested":[14],"to":[15,32,49,58,77,99,120,135],"reflect":[16],"geometric":[17],"variations":[18,124],"in":[19],"mold":[20],"height,":[21],"dielectric":[22],"thickness,":[23],"critical":[24],"dimension,":[25],"hole":[26,42,90],"pitch,":[27],"and":[28,110,128,132,141],"hole-to-cut":[29],"variation":[30],"due":[31],"the":[33,59,71,78,88,101,108],"wordline":[34],"cut":[35],"(WLC)":[36],"edge":[37],"roughness.":[38],"To":[39],"parametrize":[40],"channel":[41,65,89,112,143],"profiles,":[43],"various":[44],"physical":[45,75],"elements":[46,76],"with":[47],"respect":[48],"cell":[50,122],"dimensions":[51],"were":[52],"extracted":[53],"through":[54],"metrological":[55],"inspections,":[56],"leading":[57],"successful":[60],"construction":[61],"of":[62,74,125],"a":[63,93],"noncircular":[64],"characterization":[66],"model.":[67],"Furthermore,":[68],"we":[69],"classified":[70],"contribution":[72],"rates":[73],"threshold":[79],"voltage":[80],"(V<inf":[81],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[82,103],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</inf>)":[83],"distribution":[84,105],"mismatch":[85,106],"depending":[86],"on":[87],"location.":[91],"Finally,":[92],"process":[94,130],"design":[95],"guideline":[96],"was":[97],"proposed":[98,115],"mitigate":[100,136],"V<inf":[102],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</inf>":[104],"between":[107,139],"inner":[109,140],"outer":[111,126,142],"holes.":[113,144],"The":[114],"model":[116],"can":[117],"be":[118],"used":[119],"predict":[121],"characteristic":[123],"holes":[127],"optimize":[129],"parameters":[131],"layout":[133],"designs":[134],"problematic":[137],"mismatches":[138]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}