{"id":"https://openalex.org/W4411233180","doi":"https://doi.org/10.1109/imw61990.2025.11026947","title":"Deposition of ALD-Molybdenum for Flash Memory Wordline Metallization","display_name":"Deposition of ALD-Molybdenum for Flash Memory Wordline Metallization","publication_year":2025,"publication_date":"2025-05-18","ids":{"openalex":"https://openalex.org/W4411233180","doi":"https://doi.org/10.1109/imw61990.2025.11026947"},"language":"en","primary_location":{"id":"doi:10.1109/imw61990.2025.11026947","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw61990.2025.11026947","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001564146","display_name":"Joshua Collins","orcid":"https://orcid.org/0000-0002-8975-9966"},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Joshua Collins","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111917144","display_name":"Sanjay Gopinath","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sanjay Gopinath","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027132345","display_name":"K. A. Ashtiani","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kaihan Ashtiani","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000289774","display_name":"Shruti V. Thombare","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shruti Thombare","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5118130287","display_name":"Xiaolan Ba","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiaolan Ba","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Griffin Kennedy","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Griffin Kennedy","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025280775","display_name":"Juwen Gao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210139090","display_name":"Lam Research (United States)","ror":"https://ror.org/04gecbm52","country_code":"US","type":"company","lineage":["https://openalex.org/I4210139090"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Juwen Gao","raw_affiliation_strings":["ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA"],"affiliations":[{"raw_affiliation_string":"ALD-CVD Metals,Lam Research Corporation,Fremont,CA,USA","institution_ids":["https://openalex.org/I4210139090"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5001564146"],"corresponding_institution_ids":["https://openalex.org/I4210139090"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07365737,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.993399977684021,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.993399977684021,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13463","display_name":"Nanoporous metals and alloys","score":0.9563000202178955,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9488000273704529,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/molybdenum","display_name":"Molybdenum","score":0.7680453062057495},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.7524293661117554},{"id":"https://openalex.org/keywords/deposition","display_name":"Deposition (geology)","score":0.6205450296401978},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6030856370925903},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.46723681688308716},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.44057032465934753},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3638395667076111},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.22860756516456604},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.18464571237564087},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18411663174629211},{"id":"https://openalex.org/keywords/geology","display_name":"Geology","score":0.10065427422523499},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.08250349760055542},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07058393955230713}],"concepts":[{"id":"https://openalex.org/C549387045","wikidata":"https://www.wikidata.org/wiki/Q1053","display_name":"Molybdenum","level":2,"score":0.7680453062057495},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.7524293661117554},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.6205450296401978},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6030856370925903},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.46723681688308716},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44057032465934753},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3638395667076111},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.22860756516456604},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.18464571237564087},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18411663174629211},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.10065427422523499},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.08250349760055542},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07058393955230713},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw61990.2025.11026947","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw61990.2025.11026947","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2281209855","https://openalex.org/W2299214998","https://openalex.org/W2326565381","https://openalex.org/W2329700129","https://openalex.org/W4387921367"],"related_works":["https://openalex.org/W2992369614","https://openalex.org/W335291211","https://openalex.org/W4252692220","https://openalex.org/W2017189043","https://openalex.org/W3005194388","https://openalex.org/W1982212552","https://openalex.org/W2040198431","https://openalex.org/W4387820699","https://openalex.org/W2392407918","https://openalex.org/W2271237981"],"abstract_inverted_index":{"Multiple":[0],"metallization":[1],"applications":[2],"in":[3,39],"both":[4],"memory":[5,44],"and":[6,52,65],"logic":[7],"are":[8],"transitioning":[9],"to":[10,58,66,77],"fluorine-free,":[11],"barrierless":[12],"ALD":[13],"molybdenum.":[14],"For":[15],"the":[16],"NAND":[17,42,60,71],"Flash":[18,43,61,72],"wordline":[19,37,62],"application":[20],"we":[21,48],"have":[22],"developed":[23],"a":[24],"proprietary":[25],"ALD-Molybdenum":[26],"(ALD-Mo)":[27],"process":[28,63],"that":[29],"nucleates":[30],"well":[31],"on":[32],"dielectrics":[33],"(Al2O3),":[34],"enabling":[35],"low":[36],"resistance":[38],"geometrically":[40],"constrained":[41],"arrays.In":[45],"this":[46],"paper":[47],"demonstrate":[49],"how":[50],"chemistry":[51],"transport":[53],"modeling":[54],"can":[55],"be":[56],"used":[57],"guide":[59],"optimization":[64],"anticipate":[67],"future":[68],"requirements":[69],"as":[70],"devices":[73],"transition":[74],"from":[75],"300":[76],"1000":[78],"wordlines.":[79]},"counts_by_year":[],"updated_date":"2026-04-17T18:11:37.981687","created_date":"2025-10-10T00:00:00"}