{"id":"https://openalex.org/W4398774996","doi":"https://doi.org/10.1109/imw59701.2024.10536985","title":"Flash memory revolution: journey from 2D to 3D, migrating to modular memory fabrication","display_name":"Flash memory revolution: journey from 2D to 3D, migrating to modular memory fabrication","publication_year":2024,"publication_date":"2024-05-12","ids":{"openalex":"https://openalex.org/W4398774996","doi":"https://doi.org/10.1109/imw59701.2024.10536985"},"language":"en","primary_location":{"id":"doi:10.1109/imw59701.2024.10536985","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw59701.2024.10536985","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113508817","display_name":"Ryota Katsumata","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Ryota Katsumata","raw_affiliation_strings":["Kioxia Corporation,Advanced Memory Development Center,Yokkaichi,Japan","Advanced Memory Development Center, Kioxia Corporation, Yokkaichi, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Advanced Memory Development Center,Yokkaichi,Japan","institution_ids":[]},{"raw_affiliation_string":"Advanced Memory Development Center, Kioxia Corporation, Yokkaichi, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5113508817"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.3441,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.94791968,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/stacking","display_name":"Stacking","score":0.7519140243530273},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.6896355152130127},{"id":"https://openalex.org/keywords/modular-design","display_name":"Modular design","score":0.620988667011261},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.5805536508560181},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5693214535713196},{"id":"https://openalex.org/keywords/conventional-memory","display_name":"Conventional memory","score":0.5378190279006958},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.48752257227897644},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.4679393172264099},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4420154392719269},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.43208447098731995},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3491936922073364},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.33072635531425476},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3164156973361969},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.311162531375885},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.19924834370613098},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1690969169139862},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.16780823469161987},{"id":"https://openalex.org/keywords/interleaved-memory","display_name":"Interleaved memory","score":0.12953761219978333},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09913644194602966},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0770631730556488}],"concepts":[{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.7519140243530273},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.6896355152130127},{"id":"https://openalex.org/C101468663","wikidata":"https://www.wikidata.org/wiki/Q1620158","display_name":"Modular design","level":2,"score":0.620988667011261},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.5805536508560181},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5693214535713196},{"id":"https://openalex.org/C53838383","wikidata":"https://www.wikidata.org/wiki/Q541148","display_name":"Conventional memory","level":5,"score":0.5378190279006958},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.48752257227897644},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.4679393172264099},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4420154392719269},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.43208447098731995},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3491936922073364},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.33072635531425476},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3164156973361969},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.311162531375885},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.19924834370613098},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1690969169139862},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.16780823469161987},{"id":"https://openalex.org/C63511323","wikidata":"https://www.wikidata.org/wiki/Q908936","display_name":"Interleaved memory","level":4,"score":0.12953761219978333},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09913644194602966},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0770631730556488},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw59701.2024.10536985","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw59701.2024.10536985","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320307793","display_name":"Western Digital","ror":"https://ror.org/02hqwnx33"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2005879754","https://openalex.org/W2139304324","https://openalex.org/W2150109955","https://openalex.org/W2154590833","https://openalex.org/W2268118299","https://openalex.org/W3006330903","https://openalex.org/W4250522484","https://openalex.org/W4322507163"],"related_works":["https://openalex.org/W2116397085","https://openalex.org/W2535372975","https://openalex.org/W2017101954","https://openalex.org/W2537636062","https://openalex.org/W1594494193","https://openalex.org/W2378293894","https://openalex.org/W2135436866","https://openalex.org/W1994190181","https://openalex.org/W1492907585","https://openalex.org/W2025447045"],"abstract_inverted_index":{"The":[0,34],"technological":[1],"history":[2],"is":[3,23],"discussed":[4],"from":[5],"the":[6,9,27,93],"birth":[7],"to":[8,75,89,134],"present":[10],"of":[11,19,29,42,56,95,100,111],"3D":[12,20],"flash":[13,21],"memory.":[14],"Further":[15],"high":[16,43],"memory":[17,22,139],"density":[18],"driven":[24],"by":[25,104],"increasing":[26,105],"number":[28,94],"word":[30],"line":[31],"(WL)":[32],"stacking.":[33],"challenges":[35],"for":[36,114],"higher":[37,85,127],"stacking":[38,128],"are:":[39],"significant":[40],"difficulty":[41],"aspect":[44],"ratio":[45],"structure":[46],"processing":[47],"including":[48],"stress":[49],"control,":[50],"lower":[51],"cell":[52],"current,":[53],"increased":[54],"area":[55],"connection":[57],"between":[58],"WL":[59],"drive":[60],"circuit":[61],"and":[62,67,97,142],"WL,":[63],"so":[64,68],"called":[65],"staircase,":[66],"on.":[69],"Economic":[70],"issues":[71],"what":[72],"we":[73],"have":[74],"discover":[76],"technical":[77],"and/or":[78],"operational":[79],"solution":[80,113],"in":[81,92,106],"near":[82],"future":[83],"are":[84,121],"process":[86,107],"cost":[87],"due":[88],"an":[90],"increase":[91],"layers":[96],"a":[98,115],"lengthening":[99],"turnaround":[101],"time":[102],"(TAT)":[103],"steps.":[108],"As":[109],"one":[110],"optimal":[112],"2xx":[116],"generation,":[117],"three":[118],"key":[119],"technologies":[120],"introduced,":[122],"which":[123],"don't":[124],"rely":[125],"on":[126],"as":[129],"follows:":[130],"CMOS":[131],"directly":[132],"bonded":[133],"array":[135],"(CBA),":[136],"super-multiple":[137],"staggered":[138],"hole":[140],"layout":[141],"on-pitch":[143],"select":[144],"gate":[145],"drain-side":[146],"(OPS).":[147]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":2}],"updated_date":"2026-08-12T21:12:35.861297","created_date":"2025-10-10T00:00:00"}