{"id":"https://openalex.org/W4398784231","doi":"https://doi.org/10.1109/imw59701.2024.10536943","title":"Gate-All-Around SRAM: Performance Investigation and Optimization Towards Vccmin Scaling","display_name":"Gate-All-Around SRAM: Performance Investigation and Optimization Towards Vccmin Scaling","publication_year":2024,"publication_date":"2024-05-12","ids":{"openalex":"https://openalex.org/W4398784231","doi":"https://doi.org/10.1109/imw59701.2024.10536943"},"language":"en","primary_location":{"id":"doi:10.1109/imw59701.2024.10536943","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/imw59701.2024.10536943","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005172535","display_name":"Pratik B. Vyas","orcid":"https://orcid.org/0000-0002-4895-612X"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Pratik B. Vyas","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102010262","display_name":"Ashish Pal","orcid":"https://orcid.org/0000-0002-7753-2051"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ashish Pal","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084447193","display_name":"Gregory Costrini","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gregory Costrini","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089883415","display_name":"B. Colombeau","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benjamin Colombeau","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110987984","display_name":"Bala Haran","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bala Haran","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113227870","display_name":"Subi Kengeri","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Subi Kengeri","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046732300","display_name":"El Mehdi Bazizi","orcid":"https://orcid.org/0000-0002-2053-6270"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"El Mehdi Bazizi","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,USA","Applied Materials Inc., Santa Clara, California, USA"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,USA","institution_ids":["https://openalex.org/I193427800"]},{"raw_affiliation_string":"Applied Materials Inc., Santa Clara, California, USA","institution_ids":["https://openalex.org/I193427800"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5005172535"],"corresponding_institution_ids":["https://openalex.org/I193427800"],"apc_list":null,"apc_paid":null,"fwci":0.2225,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.49051846,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"68","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9636054039001465},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.9400663375854492},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.799209475517273},{"id":"https://openalex.org/keywords/nanosheet","display_name":"Nanosheet","score":0.5267940163612366},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.48525142669677734},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44607239961624146},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.40449297428131104},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.33765363693237305},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3049222230911255},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2973053455352783},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2534971833229065},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.15361475944519043}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9636054039001465},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.9400663375854492},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.799209475517273},{"id":"https://openalex.org/C51967427","wikidata":"https://www.wikidata.org/wiki/Q17148232","display_name":"Nanosheet","level":2,"score":0.5267940163612366},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.48525142669677734},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44607239961624146},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.40449297428131104},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.33765363693237305},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3049222230911255},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2973053455352783},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2534971833229065},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15361475944519043}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw59701.2024.10536943","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/imw59701.2024.10536943","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W3003588892","https://openalex.org/W3159811820","https://openalex.org/W3162360034","https://openalex.org/W4210513465"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2048420745","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W2160067645","https://openalex.org/W2023334077","https://openalex.org/W2005494397","https://openalex.org/W2104885411","https://openalex.org/W2339836056"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3,66],"evaluate":[4],"GAA":[5,18,57,74],"SRAM":[6,19,58,75],"performance":[7],"and":[8,25,36,41,49],"compare":[9],"it":[10],"to":[11,28,33,59,70],"FinFET":[12,29,83],"SRAM.":[13,84],"Our":[14],"modeling":[15],"indicates":[16],"that":[17],"can":[20,76],"have":[21],"better":[22,34],"stability,":[23],"writability":[24],"read-current":[26],"compared":[27],"SRAM,":[30],"primarily":[31],"due":[32,69],"electrostatics":[35],"drive-strength":[37],"ratio":[38],"between":[39],"nMOS":[40],"pMOS.":[42],"Design":[43],"optimizations":[44],"through":[45],"varying":[46],"nanosheet":[47],"count":[48],"introduction":[50],"of":[51],"backside":[52],"power":[53],"delivery":[54],"network":[55],"allows":[56],"be":[60],"tailored":[61],"for":[62],"different":[63],"applications.":[64],"Furthermore,":[65],"show":[67],"that,":[68],"lower":[71,78],"process":[72],"variability,":[73],"achieve":[77],"operating":[79],"voltages":[80],"(Vccmin)":[81],"than":[82]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}