{"id":"https://openalex.org/W4380302652","doi":"https://doi.org/10.1109/imw56887.2023.10145969","title":"Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications","display_name":"Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications","publication_year":2023,"publication_date":"2023-05-01","ids":{"openalex":"https://openalex.org/W4380302652","doi":"https://doi.org/10.1109/imw56887.2023.10145969"},"language":"en","primary_location":{"id":"doi:10.1109/imw56887.2023.10145969","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw56887.2023.10145969","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086624969","display_name":"Gianluca Nicosia","orcid":"https://orcid.org/0000-0002-3200-1134"},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Gianluca Nicosia","raw_affiliation_strings":["NAND Technology Development, Micron Technology, Inc. Boise,ID,USA,83716"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NAND Technology Development, Micron Technology, Inc. Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089261401","display_name":"Niccol\u00f2 Righetti","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Niccol\u00f2 Righetti","raw_affiliation_strings":["NAND Technology Development, Micron Technology, Inc. Boise,ID,USA,83716"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NAND Technology Development, Micron Technology, Inc. Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100594108","display_name":"Yingda Dong","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yingda Dong","raw_affiliation_strings":["NAND Technology Development, Micron Technology, Inc. Boise,ID,USA,83716"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NAND Technology Development, Micron Technology, Inc. Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5086624969"],"corresponding_institution_ids":["https://openalex.org/I11912373"],"apc_list":null,"apc_paid":null,"fwci":1.5152,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.82408006,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cycling","display_name":"Cycling","score":0.8251502513885498},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.7980941534042358},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6042753458023071},{"id":"https://openalex.org/keywords/temperature-cycling","display_name":"Temperature cycling","score":0.5628709197044373},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.5298578143119812},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5177706480026245},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.4593195915222168},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.450858473777771},{"id":"https://openalex.org/keywords/power-cycling","display_name":"Power cycling","score":0.44612494111061096},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40550875663757324},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.28182488679885864},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.24860438704490662},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19745773077011108},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.18500623106956482},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.110089510679245},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.09899315237998962}],"concepts":[{"id":"https://openalex.org/C541528975","wikidata":"https://www.wikidata.org/wiki/Q53121","display_name":"Cycling","level":2,"score":0.8251502513885498},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.7980941534042358},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6042753458023071},{"id":"https://openalex.org/C177564732","wikidata":"https://www.wikidata.org/wiki/Q7698333","display_name":"Temperature cycling","level":3,"score":0.5628709197044373},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.5298578143119812},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5177706480026245},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.4593195915222168},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.450858473777771},{"id":"https://openalex.org/C2777900271","wikidata":"https://www.wikidata.org/wiki/Q17105337","display_name":"Power cycling","level":4,"score":0.44612494111061096},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40550875663757324},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.28182488679885864},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.24860438704490662},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19745773077011108},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.18500623106956482},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.110089510679245},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09899315237998962},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C166957645","wikidata":"https://www.wikidata.org/wiki/Q23498","display_name":"Archaeology","level":1,"score":0.0},{"id":"https://openalex.org/C95457728","wikidata":"https://www.wikidata.org/wiki/Q309","display_name":"History","level":0,"score":0.0},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw56887.2023.10145969","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw56887.2023.10145969","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W2109136771","https://openalex.org/W2109987538","https://openalex.org/W2151550467","https://openalex.org/W2156076822","https://openalex.org/W2527571763","https://openalex.org/W2544022642","https://openalex.org/W2545558283","https://openalex.org/W2964683765","https://openalex.org/W2996877977","https://openalex.org/W3006330903","https://openalex.org/W3040601450","https://openalex.org/W3093982999","https://openalex.org/W3162489493","https://openalex.org/W4225295251","https://openalex.org/W4225305080","https://openalex.org/W6780105511","https://openalex.org/W6795601688"],"related_works":["https://openalex.org/W2141907015","https://openalex.org/W2105660900","https://openalex.org/W2106471457","https://openalex.org/W4299816823","https://openalex.org/W1986832695","https://openalex.org/W2053345174","https://openalex.org/W4376606851","https://openalex.org/W2253296694","https://openalex.org/W2040557976","https://openalex.org/W2085316847"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"present":[4],"the":[5,12,59,70,77,83,90,116],"first":[6],"electrical":[7],"characterization":[8],"and":[9,39,47,63,86,107],"modeling":[10],"of":[11,18,33],"impact":[13],"on":[14,29,58,65,69,115],"long-term":[15],"data":[16],"retention":[17],"distributed":[19],"cycling":[20,31,61,66,105,108,117,126],"in":[21,93,123],"charge":[22,37,41,80],"trap":[23],"(CT)":[24],"3D":[25,130],"NAND":[26,95,131],"arrays.":[27,96],"Dependence":[28],"Program/Erase":[30,74],"conditions":[32],"trapassisted":[34],"tunneling":[35],"(TAT),":[36],"detrapping,":[38],"lateral":[40],"migration":[42],"(LCM)":[43],"are":[44,120],"experimentally":[45],"evaluated":[46],"modeled.":[48],"It":[49],"is":[50,99],"demonstrated":[51],"that":[52],"post-cycling":[53],"TAT":[54],"degradation":[55],"depends":[56],"only":[57],"overall":[60],"dose":[62,106],"not":[64],"temperature":[67,87,109],"nor":[68],"delays":[71],"in-between":[72],"each":[73],"operation.":[75],"On":[76],"other":[78],"hand,":[79],"detrapping":[81],"follows":[82],"same":[84],"time":[85],"dynamics":[88],"as":[89],"ones":[91],"observed":[92,100],"floating-gate":[94],"Finally,":[97],"LCM":[98],"to":[101,111],"improve":[102],"with":[103],"increasing":[104],"but":[110],"be":[112],"negligibly":[113],"dependent":[114],"duration.":[118],"Results":[119],"a":[121],"cornerstone":[122],"designing":[124],"accelerated":[125],"tests":[127],"for":[128],"CT":[129],"arrays":[132],"qualification.":[133]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":1}],"updated_date":"2026-05-08T15:41:06.802602","created_date":"2025-10-10T00:00:00"}