{"id":"https://openalex.org/W4281552440","doi":"https://doi.org/10.1109/imw52921.2022.9779292","title":"Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges","display_name":"Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges","publication_year":2022,"publication_date":"2022-05-01","ids":{"openalex":"https://openalex.org/W4281552440","doi":"https://doi.org/10.1109/imw52921.2022.9779292"},"language":"en","primary_location":{"id":"doi:10.1109/imw52921.2022.9779292","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw52921.2022.9779292","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057664375","display_name":"Jae\u2010Gil Lee","orcid":"https://orcid.org/0000-0002-6127-9047"},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jae-Gil Lee","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078321360","display_name":"Joong-Sik Kim","orcid":"https://orcid.org/0000-0002-2554-558X"},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joongsik Kim","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113954472","display_name":"Dong Ik Suh","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong Ik Suh","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091237569","display_name":"Ildo Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ildo Kim","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003167394","display_name":"Gwon Deok Han","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gwon Deok Han","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109930504","display_name":"Seung Wook Ryu","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung Wook Ryu","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101399064","display_name":"Seho Lee","orcid":"https://orcid.org/0000-0002-4208-8448"},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seho Lee","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088100619","display_name":"Myung-Hee Na","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myung-Hee Na","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045305688","display_name":"Seon Yong","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seon Yong Cha","raw_affiliation_strings":["SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091696487","display_name":"Hyeon Woo Park","orcid":"https://orcid.org/0009-0009-1609-3321"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyeon Woo Park","raw_affiliation_strings":["Seoul National University,Materials Science and Engineering,Seoul,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Materials Science and Engineering,Seoul,Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027075775","display_name":"Cheol Seong Hwang","orcid":"https://orcid.org/0000-0002-6254-9758"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Cheol Seong Hwang","raw_affiliation_strings":["Seoul National University,Materials Science and Engineering,Seoul,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Materials Science and Engineering,Seoul,Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5057664375"],"corresponding_institution_ids":["https://openalex.org/I134353371"],"apc_list":null,"apc_paid":null,"fwci":1.9214,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.85641894,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.8281978368759155},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5306951999664307},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5249181389808655},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.5063060522079468},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4702317416667938},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45651838183403015},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4441324472427368},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4264659881591797},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3994675278663635},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.33508777618408203},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31740209460258484},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.22468861937522888},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.13374045491218567},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.10534724593162537},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09012553095817566}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.8281978368759155},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5306951999664307},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5249181389808655},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.5063060522079468},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4702317416667938},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45651838183403015},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4441324472427368},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4264659881591797},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3994675278663635},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.33508777618408203},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31740209460258484},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22468861937522888},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.13374045491218567},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.10534724593162537},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09012553095817566},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw52921.2022.9779292","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw52921.2022.9779292","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5400000214576721,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2086364962","https://openalex.org/W2606793363","https://openalex.org/W3005761635","https://openalex.org/W3114890365","https://openalex.org/W3122384219"],"related_works":["https://openalex.org/W1996780177","https://openalex.org/W2011074861","https://openalex.org/W2910697626","https://openalex.org/W2166883442","https://openalex.org/W1963822728","https://openalex.org/W2034643761","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"The":[0],"memory":[1],"window":[2],"(MW)":[3],"of":[4,28,101,138,149],"a":[5,82,142],"metal-ferroelectric-semiconductor":[6],"(MFS)-based":[7],"ferroelectric":[8],"field-effect":[9],"transistor":[10],"(FE-FET)":[11],"is":[12,24,70,123],"generally":[13],"2V":[14,64],"<inf":[15,21,65,113],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[16,22,66,114],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">c</inf>":[17,23,67,115],",":[18,68],"where":[19],"V":[20,112],"the":[25,29,34,43,47,52,55,57,74,88,95,102,108,111,126,131,136,147],"coercive":[26],"voltage":[27,128],"FE":[30,139,144],"layer.":[31],"When":[32,99],"applying":[33],"program":[35],"and":[36,117],"erase":[37],"voltages,":[38],"adverse":[39],"charge":[40,133],"injection":[41],"from":[42],"gate":[44,96],"metal":[45],"or":[46],"channel":[48],"likely":[49],"occurs.":[50],"While":[51],"latter":[53],"decreases":[54],"MW,":[56],"former":[58],"may":[59],"further":[60],"increase":[61],"it":[62],"over":[63],"which":[69],"highly":[71],"useful":[72],"for":[73],"multilevel":[75],"FE-FET.":[76,159],"In":[77],"this":[78],"work,":[79],"we":[80],"propose":[81],"metal-insulator-ferroelectric-semiconductor":[83],"(MIFS)-based":[84],"FE-FET":[85,151],"to":[86,125,157],"widen":[87],"MW":[89,119,148],"by":[90,130,154],"providing":[91],"additional":[92,127],"charges":[93,104],"at":[94,107,135],"metal/ferroelectric":[97],"interface.":[98],"part":[100],"injected":[103,132],"are":[105],"retained":[106],"polarization":[109],"switching,":[110],"increases,":[116],"thus,":[118],"also":[120],"increases.":[121],"This":[122],"due":[124],"drop":[129],"exchange":[134],"moment":[137],"switching.":[140],"For":[141],"given":[143],"layer":[145],"thickness,":[146],"MIFS-stacked":[150],"was":[152],"expanded":[153],"\u223c55%":[155],"compared":[156],"MFS-stacked":[158]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":13},{"year":2022,"cited_by_count":1}],"updated_date":"2026-01-11T23:08:45.486102","created_date":"2025-10-10T00:00:00"}