{"id":"https://openalex.org/W3170930864","doi":"https://doi.org/10.1109/imw51353.2021.9439620","title":"First demonstration of ferroelectric Si:HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application","display_name":"First demonstration of ferroelectric Si:HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application","publication_year":2021,"publication_date":"2021-05-01","ids":{"openalex":"https://openalex.org/W3170930864","doi":"https://doi.org/10.1109/imw51353.2021.9439620","mag":"3170930864"},"language":"en","primary_location":{"id":"doi:10.1109/imw51353.2021.9439620","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw51353.2021.9439620","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034314528","display_name":"Kaustuv Banerjee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":true,"raw_author_name":"K. Banerjee","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109945478","display_name":"L. Breuil","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"L. Breuil","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038024347","display_name":"Alexey Milenin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"A.P. Milenin","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041924693","display_name":"Murat Pak","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"M. Pak","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074370205","display_name":"J. Stiers","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. Stiers","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062393479","display_name":"S. R. C. McMitchell","orcid":"https://orcid.org/0000-0002-9916-0973"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"S. R. C. McMitchell","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039968388","display_name":"Luca Piazza","orcid":"https://orcid.org/0000-0001-7088-4380"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"L. Di Piazza","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035325463","display_name":"G. Van den bosch","orcid":"https://orcid.org/0000-0001-9971-6954"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"G. van den bosch","raw_affiliation_strings":["Imec,Leuven,Belgium","Imec, Leuven, Belgium"],"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043193313","display_name":"Jan Van Houdt","orcid":"https://orcid.org/0000-0003-1381-6925"},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. van Houdt","raw_affiliation_strings":["KU Leuven,ESAT Department,Leuven,Belgium"],"affiliations":[{"raw_affiliation_string":"KU Leuven,ESAT Department,Leuven,Belgium","institution_ids":["https://openalex.org/I99464096"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5034314528"],"corresponding_institution_ids":["https://openalex.org/I4210114974"],"apc_list":null,"apc_paid":null,"fwci":1.4038,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.80990002,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9936000108718872,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9883999824523926,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.7769063711166382},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6649813055992126},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.6580297946929932},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.622410237789154},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6186760067939758},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5729290246963501},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.522282600402832},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.5034250617027283},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.45344430208206177},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4169526696205139},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38781893253326416},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.3555264174938202},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.34510356187820435},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3333396017551422},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.3260146975517273},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.1865578591823578},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13865315914154053},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12022385001182556}],"concepts":[{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.7769063711166382},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6649813055992126},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6580297946929932},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.622410237789154},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6186760067939758},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5729290246963501},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.522282600402832},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.5034250617027283},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.45344430208206177},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4169526696205139},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38781893253326416},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.3555264174938202},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34510356187820435},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3333396017551422},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.3260146975517273},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1865578591823578},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13865315914154053},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12022385001182556},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw51353.2021.9439620","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw51353.2021.9439620","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1625170149","https://openalex.org/W2744248371","https://openalex.org/W2889470051","https://openalex.org/W2913599018","https://openalex.org/W3118878912"],"related_works":["https://openalex.org/W4380302405","https://openalex.org/W1969888373","https://openalex.org/W4376612721","https://openalex.org/W2903035209","https://openalex.org/W4237246592","https://openalex.org/W2120144651","https://openalex.org/W2105604473","https://openalex.org/W2142132523","https://openalex.org/W2097792885","https://openalex.org/W2166508075"],"abstract_inverted_index":{"A":[0,31],"vertical":[1],"3D":[2,80],"ferroelectric":[3],"(FE)":[4],"FET,":[5],"fabricated":[6,20],"with":[7,37],"a":[8,25],"trench-based":[9],"architecture,":[10],"has":[11],"been":[12],"demonstrated":[13],"for":[14,56,64],"the":[15,54,62,83],"first":[16],"time.":[17],"Devices":[18],"were":[19,50],"on":[21],"300mm":[22],"wafers":[23],"across":[24],"wide":[26],"range":[27],"of":[28,35,40,68],"channel":[29],"dimensions.":[30],"memory":[32,73],"window":[33],"(MW)":[34],"3V":[36],"an":[38],"endurance":[39],"around":[41],"10":[42],"<sup":[43],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[44],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</sup>":[45],"cycles":[46],"and":[47,66],"good":[48],"retention":[49],"measured,":[51],"thereby":[52],"paving":[53],"way":[55],"multi-bit":[57],"operation.":[58],"This":[59],"study":[60],"lays":[61],"foundation":[63],"design":[65],"fabrication":[67],"ultra-dense,":[69],"low":[70],"power,":[71],"non-volatile":[72],"(NVM),":[74],"which":[75],"can":[76],"succeed":[77],"charge-trap":[78],"based":[79],"NAND":[81],"in":[82],"near":[84],"future.":[85]},"counts_by_year":[{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":7}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}