{"id":"https://openalex.org/W3167074369","doi":"https://doi.org/10.1109/imw51353.2021.9439603","title":"Design of Non-volatile Capacitive Crossbar Array for In-Memory Computing","display_name":"Design of Non-volatile Capacitive Crossbar Array for In-Memory Computing","publication_year":2021,"publication_date":"2021-05-01","ids":{"openalex":"https://openalex.org/W3167074369","doi":"https://doi.org/10.1109/imw51353.2021.9439603","mag":"3167074369"},"language":"en","primary_location":{"id":"doi:10.1109/imw51353.2021.9439603","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw51353.2021.9439603","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055097977","display_name":"Yuan-Chun Luo","orcid":"https://orcid.org/0000-0001-5793-075X"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan-Chun Luo","raw_affiliation_strings":["Georgia Institute of Technology,Atlanta,GA,USA,30332"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072117537","display_name":"Anni Lu","orcid":"https://orcid.org/0000-0002-4415-0866"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anni Lu","raw_affiliation_strings":["Georgia Institute of Technology,Atlanta,GA,USA,30332"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041409707","display_name":"Jae Hur","orcid":"https://orcid.org/0000-0003-1446-2305"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jae Hur","raw_affiliation_strings":["Georgia Institute of Technology,Atlanta,GA,USA,30332"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030597298","display_name":"Shaolan Li","orcid":"https://orcid.org/0000-0002-2736-5451"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shaolan Li","raw_affiliation_strings":["Georgia Institute of Technology,Atlanta,GA,USA,30332"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054894631","display_name":"Shimeng Yu","orcid":"https://orcid.org/0000-0002-0068-3652"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shimeng Yu","raw_affiliation_strings":["Georgia Institute of Technology,Atlanta,GA,USA,30332"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":6.105,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.97769653,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.8244408369064331},{"id":"https://openalex.org/keywords/crossbar-switch","display_name":"Crossbar switch","score":0.7795449495315552},{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.5980091691017151},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4904022216796875},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.46810436248779297},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4168654978275299},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3425025939941406},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2778310477733612},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22257667779922485},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18772763013839722},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1715301275253296},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.1299116611480713}],"concepts":[{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.8244408369064331},{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.7795449495315552},{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.5980091691017151},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4904022216796875},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.46810436248779297},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4168654978275299},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3425025939941406},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2778310477733612},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22257667779922485},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18772763013839722},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1715301275253296},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.1299116611480713},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/imw51353.2021.9439603","is_oa":false,"landing_page_url":"https://doi.org/10.1109/imw51353.2021.9439603","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Memory Workshop (IMW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1686810756","https://openalex.org/W2248832573","https://openalex.org/W2433248078","https://openalex.org/W2785141883","https://openalex.org/W2921351161","https://openalex.org/W2953019935","https://openalex.org/W2962835968","https://openalex.org/W3003822472","https://openalex.org/W3005619596","https://openalex.org/W3005886446","https://openalex.org/W3042621001","https://openalex.org/W3061543729","https://openalex.org/W6637373629","https://openalex.org/W6690960458"],"related_works":["https://openalex.org/W3008169960","https://openalex.org/W2126469287","https://openalex.org/W2290345481","https://openalex.org/W2060676714","https://openalex.org/W2038758712","https://openalex.org/W2149314080","https://openalex.org/W4313000837","https://openalex.org/W3194595387","https://openalex.org/W3011006018","https://openalex.org/W3175457273"],"abstract_inverted_index":{"Capacitive":[0],"crossbar":[1,33,120,140,160],"array":[2,60,121],"with":[3,124],"non-volatile":[4,24,118],"ferroelectric":[5,18,72],"capacitors":[6,19,69,73],"as":[7],"synaptic":[8],"devices":[9],"is":[10,122,150],"designed":[11],"and":[12,23,38,51,71,90,93,108],"analyzed.":[13],"We":[14,28],"developed":[15],"HfxZr1-xO2(HZO)":[16],"based":[17],"that":[20,30,115],"exhibit":[21],"tunable":[22],"small-signal":[25],"capacitance":[26],"states.":[27],"claim":[29],"the":[31,48,53,59,64,77,86,101,109,157],"capacitive":[32,119,139],"architecture":[34],"can":[35,142],"perform":[36],"read-disturbance-free":[37],"energy-efficient":[39],"in-memory":[40],"computing.":[41],"In":[42],"this":[43],"paper,":[44],"we":[45,62,84,113],"first":[46],"show":[47,114],"device":[49],"characteristics":[50],"discuss":[52],"underlying":[54],"physical":[55],"mechanism.":[56],"Moving":[57],"to":[58,75,156],"analysis,":[61],"identify":[63],"optimal":[65],"ratio":[66],"between":[67,88],"reference":[68],"(Cref)":[70],"(CFE)":[74],"maximize":[76],"output":[78,91],"voltage":[79],"swing":[80],">50":[81],"mV.":[82],"Then":[83],"explore":[85],"tradeoff":[87],"delay":[89,96],"switching":[92],"aim":[94],"for":[95,129],"<;":[97],"30ns.":[98],"Based":[99],"on":[100],"extracted":[102],"experimental":[103],"data":[104],"from":[105],"HZO":[106],"capacitor":[107],"array-level":[110],"SPICE":[111],"simulation,":[112],"a":[116],"128\u00d7128":[117],"compatible":[123],"3-bit":[125],"analog-to-digital":[126],"converter":[127],"(ADC)":[128],"partial":[130],"sum":[131],"quantization":[132],"even":[133],"under":[134],"thermal":[135],"noise.":[136],"The":[137],"optimized":[138],"design":[141],"achieve":[143],"3.8":[144],"pJ":[145],"per":[146],"vector-matrix":[147],"multiplication,":[148],"which":[149],"14.3\u00d7~57.3\u00d7":[151],"lower":[152],"energy":[153],"consumption":[154],"compared":[155],"representative":[158],"resistive":[159],"array.":[161]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}