{"id":"https://openalex.org/W4387802065","doi":"https://doi.org/10.1109/igarss52108.2023.10281518","title":"Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications","display_name":"Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications","publication_year":2023,"publication_date":"2023-07-16","ids":{"openalex":"https://openalex.org/W4387802065","doi":"https://doi.org/10.1109/igarss52108.2023.10281518"},"language":"en","primary_location":{"id":"doi:10.1109/igarss52108.2023.10281518","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/igarss52108.2023.10281518","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023430670","display_name":"Fabian Thome","orcid":"https://orcid.org/0000-0002-1902-4323"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"F. Thome","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003914160","display_name":"Laurenz John","orcid":"https://orcid.org/0000-0002-0774-2520"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"L. John","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008897230","display_name":"Regina Weber","orcid":"https://orcid.org/0000-0001-9892-214X"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Weber","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032761394","display_name":"Felix Heinz","orcid":"https://orcid.org/0000-0001-6283-8616"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"F. Heinz","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073223422","display_name":"H. Ma\u00dfler","orcid":"https://orcid.org/0000-0001-8062-7062"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Massler","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001498592","display_name":"Arnulf Leuther","orcid":"https://orcid.org/0000-0002-4369-591X"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Leuther","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056922495","display_name":"S\u00e9bastien Chartier","orcid":"https://orcid.org/0009-0005-7279-5337"},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"S. Chartier","raw_affiliation_strings":["Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108","institution_ids":["https://openalex.org/I4210090068"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.12204724,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1115","last_page":"1118"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuit","display_name":"Monolithic microwave integrated circuit","score":0.6820118427276611},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5836012959480286},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.5728511214256287},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.509963870048523},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4911138713359833},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.48229315876960754},{"id":"https://openalex.org/keywords/cryogenics","display_name":"Cryogenics","score":0.4821900427341461},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.4775853455066681},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.4771249294281006},{"id":"https://openalex.org/keywords/indium-gallium-arsenide","display_name":"Indium gallium arsenide","score":0.4645993411540985},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.4578598141670227},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4544123411178589},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.41718152165412903},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3611757159233093},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35607635974884033},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.25070369243621826},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1913260817527771},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1596958339214325}],"concepts":[{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.6820118427276611},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5836012959480286},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5728511214256287},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.509963870048523},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4911138713359833},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.48229315876960754},{"id":"https://openalex.org/C179725390","wikidata":"https://www.wikidata.org/wiki/Q192116","display_name":"Cryogenics","level":2,"score":0.4821900427341461},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.4775853455066681},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4771249294281006},{"id":"https://openalex.org/C2779769603","wikidata":"https://www.wikidata.org/wiki/Q2618059","display_name":"Indium gallium arsenide","level":3,"score":0.4645993411540985},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.4578598141670227},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4544123411178589},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.41718152165412903},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3611757159233093},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35607635974884033},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.25070369243621826},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1913260817527771},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1596958339214325},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/igarss52108.2023.10281518","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/igarss52108.2023.10281518","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium","raw_type":"proceedings-article"},{"id":"pmh:oai:publica.fraunhofer.de:publica/458382","is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/458382","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5299999713897705,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W2047457999","https://openalex.org/W2090804180","https://openalex.org/W2137878337","https://openalex.org/W2162329841","https://openalex.org/W2554642846","https://openalex.org/W2582843482","https://openalex.org/W2763107504","https://openalex.org/W2764230743","https://openalex.org/W2773816228","https://openalex.org/W2972084230","https://openalex.org/W3000383400","https://openalex.org/W3173188595","https://openalex.org/W4205489916","https://openalex.org/W4281847189","https://openalex.org/W4385337768"],"related_works":["https://openalex.org/W1542549500","https://openalex.org/W2167356313","https://openalex.org/W2990861346","https://openalex.org/W2226943413","https://openalex.org/W1897760433","https://openalex.org/W1557806132","https://openalex.org/W4390606084","https://openalex.org/W1676938413","https://openalex.org/W2038467097","https://openalex.org/W2861349803"],"abstract_inverted_index":{"This":[0],"paper":[1,51],"demonstrates":[2],"a":[3,26,137],"set":[4],"of":[5,94,125,130,136],"wideband":[6],"state-of-the-art":[7,38,144],"low-noise":[8],"amplifier":[9],"(LNA)":[10],"monolithic":[11],"microwave":[12],"integrated":[13],"circuits":[14],"(MMICs)":[15],"ranging":[16],"from":[17],"2":[18],"to":[19,56,80],"190GHz.":[20],"All":[21],"MMICs":[22,42,132],"are":[23,102],"fabricated":[24],"in":[25],"50-nm":[27],"gate-length":[28],"InGaAs":[29,140],"metamorphic":[30],"high-electron-mobility":[31],"transistor":[32],"(mHEMT)":[33],"technology.":[34],"The":[35,50,87],"LNAs":[36],"achieve":[37],"noise":[39,70,128,148],"performance":[40,129],"for":[41,82],"at":[43,71],"room":[44,72],"temperature":[45],"(RT)":[46],"and":[47,108,116,122,146],"cryogenic":[48,74,147],"conditions.":[49],"discusses":[52],"tradeoffs":[53],"that":[54],"need":[55],"be":[57],"considerd":[58],"when":[59],"designing":[60],"the":[61,126,134],"input":[62],"matching":[63],"network:":[64],"One":[65],"can":[66],"either":[67],"target":[68],"best":[69,83],"or":[73],"temperature.":[75],"A":[76],"third":[77],"option":[78],"is":[79,89],"optimize":[81],"S<inf":[84],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">11</inf>.":[86],"discussion":[88],"exemplified":[90],"with":[91,143],"measurement":[92],"results":[93],"three":[95],"different":[96],"W-band":[97],"(75\u2013110GHz)":[98],"LNAs.":[99],"Linearity":[100],"considerations":[101],"discussed":[103],"based":[104],"on":[105],"biasdependent":[106],"single-":[107],"two-tone":[109],"circuit":[110],"measurements.":[111],"An":[112],"RF":[113],"stress":[114],"test":[115],"statistics":[117],"over":[118],"five":[119],"wafer":[120],"runs":[121],"17":[123],"wafers":[124],"measured":[127],"W-LNA1":[131],"complete":[133],"picture":[135],"highly":[138],"reliable":[139],"mHEMT":[141],"technology":[142],"RT":[145],"performance.":[149]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}