{"id":"https://openalex.org/W4406322852","doi":"https://doi.org/10.1109/ieeeconf63530.2024.10830836","title":"Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors","display_name":"Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors","publication_year":2024,"publication_date":"2024-10-20","ids":{"openalex":"https://openalex.org/W4406322852","doi":"https://doi.org/10.1109/ieeeconf63530.2024.10830836"},"language":"en","primary_location":{"id":"doi:10.1109/ieeeconf63530.2024.10830836","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ieeeconf63530.2024.10830836","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 22nd Non-Volatile Memory Technology Symposium (NVMTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061117103","display_name":"Dominik Kleimaier","orcid":"https://orcid.org/0000-0002-7235-6554"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Dominik Kleimaier","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064444897","display_name":"Stefan D\u00fcnkel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Stefan D\u00fcnkel","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013521911","display_name":"Halid Mulaosmanovic","orcid":"https://orcid.org/0000-0001-9524-5112"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Halid Mulaosmanovic","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012807288","display_name":"Johannes M\u00fcller","orcid":"https://orcid.org/0000-0002-1631-1327"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Johannes M\u00fcller","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113965605","display_name":"Sven Beyer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Sven Beyer","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &#x0026; Co. KG,Dresden,Germany","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059618963","display_name":"Viktor Havel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Viktor Havel","raw_affiliation_strings":["NaMLab gGmbH,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"NaMLab gGmbH,Dresden,Germany","institution_ids":["https://openalex.org/I4210122489"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003850300","display_name":"Thomas Mikolajick","orcid":"https://orcid.org/0000-0003-3814-0378"},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Mikolajick","raw_affiliation_strings":["NaMLab gGmbH,Dresden,Germany"],"affiliations":[{"raw_affiliation_string":"NaMLab gGmbH,Dresden,Germany","institution_ids":["https://openalex.org/I4210122489"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5061117103"],"corresponding_institution_ids":["https://openalex.org/I4210142027"],"apc_list":null,"apc_paid":null,"fwci":0.4359,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.65482694,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.7875843644142151},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7433347105979919},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7135158181190491},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6537721753120422},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5954468250274658},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.562682032585144},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.46634218096733093},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4279754161834717},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.363323450088501},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35607266426086426},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14501968026161194},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13825735449790955},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13122886419296265},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.0978291928768158}],"concepts":[{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.7875843644142151},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7433347105979919},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7135158181190491},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6537721753120422},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5954468250274658},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.562682032585144},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.46634218096733093},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4279754161834717},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.363323450088501},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35607266426086426},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14501968026161194},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13825735449790955},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13122886419296265},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0978291928768158},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ieeeconf63530.2024.10830836","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ieeeconf63530.2024.10830836","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 22nd Non-Volatile Memory Technology Symposium (NVMTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W2141635000","https://openalex.org/W2563420461","https://openalex.org/W2744312841","https://openalex.org/W2800945988","https://openalex.org/W2889210320","https://openalex.org/W2894948827","https://openalex.org/W2974354593","https://openalex.org/W3033330790","https://openalex.org/W3186271703","https://openalex.org/W3200367387","https://openalex.org/W3204638218","https://openalex.org/W4210423638","https://openalex.org/W4387492098","https://openalex.org/W4398775012","https://openalex.org/W6732367070","https://openalex.org/W6748144487"],"related_works":["https://openalex.org/W1993368695","https://openalex.org/W2245347530","https://openalex.org/W2011451034","https://openalex.org/W1963822728","https://openalex.org/W2034643761","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236","https://openalex.org/W1976012112"],"abstract_inverted_index":{"In":[0],"this":[1],"study,":[2],"various":[3],"charge":[4,45,163],"trapping":[5,126,131,164],"mechanisms":[6],"and":[7,15,44,68,106,122,129,147,171,177],"their":[8,172],"effects":[9],"on":[10,174],"the":[11,48,55,85,88,100,103,109,119,162],"endurance":[12,36,75,95],"of":[13,91,102,108,111,161],"n-":[14],"p-type":[16,133],"HfO<inf":[17,167],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[18,168],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>-based":[19,169],"FeFETs,":[20],"integrated":[21],"within":[22],"GlobalFoundries":[23],"28":[24],"nm":[25],"bulk":[26],"high-k":[27],"metal":[28],"gate":[29,51,104],"(HKMG)":[30],"technology":[31],"are":[32],"examined.":[33],"The":[34,97,153],"device's":[35,142],"is":[37,137,148],"impaired":[38],"due":[39],"to":[40,157],"pronounced":[41,139],"interface":[42,110],"degradation":[43],"injection":[46],"into":[47],"Metal-Ferroelectric-Insulator-Semiconductor":[49],"(MFIS)":[50],"stack":[52,105],"caused":[53],"by":[54,150],"high":[56],"interfacial":[57],"field":[58],"stress.":[59],"By":[60],"analyzing":[61],"threshold":[62],"voltage":[63],"shifts":[64],"under":[65],"both":[66],"bipolar":[67,74,114],"unipolar":[69],"cycling,":[70],"as":[71,73],"well":[72],"cycling":[76,115],"for":[77,140],"\u201cnon-ferroelectric\u201d":[78],"samples":[79],"with":[80],"diminishing":[81],"remanent":[82],"polarization":[83,92,151],"levels,":[84],"study":[86],"reveals":[87],"critical":[89],"role":[90],"switching":[93],"in":[94,127,132,166],"degradation.":[96],"findings":[98],"highlight":[99],"deterioration":[101],"specifically":[107],"FeFETs":[112,170],"upon":[113],"which":[116],"strongly":[117],"affects":[118],"electrical":[120],"characteristics":[121],"causes":[123],"increased":[124],"electron":[125],"n-type-FeFETs":[128],"hole":[130],"FeFETs.":[134],"This":[135],"effect":[136],"particularly":[138],"each":[141],"low":[143],"threshold-voltage":[144],"(LVT)":[145],"state":[146],"intensified":[149],"switching.":[152],"study's":[154],"results":[155],"contribute":[156],"a":[158],"deeper":[159],"understanding":[160],"phenomena":[165],"impact":[173],"device":[175],"performance":[176],"reliability.":[178]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1}],"updated_date":"2026-03-12T08:34:05.389933","created_date":"2025-10-10T00:00:00"}