{"id":"https://openalex.org/W4415969447","doi":"https://doi.org/10.1109/iecon58223.2025.11221613","title":"A Simple dv/dt and di/dt Closed-loop Active Gate Driver for SiC MOSFETs","display_name":"A Simple dv/dt and di/dt Closed-loop Active Gate Driver for SiC MOSFETs","publication_year":2025,"publication_date":"2025-10-14","ids":{"openalex":"https://openalex.org/W4415969447","doi":"https://doi.org/10.1109/iecon58223.2025.11221613"},"language":null,"primary_location":{"id":"doi:10.1109/iecon58223.2025.11221613","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon58223.2025.11221613","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2025 \u2013 51st Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103131238","display_name":"Xuhao Zhu","orcid":null},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xuhao Zhu","raw_affiliation_strings":["Southeast University,School of Electrical Engineering,Nanjing,China"],"affiliations":[{"raw_affiliation_string":"Southeast University,School of Electrical Engineering,Nanjing,China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071475574","display_name":"Wu Chen","orcid":"https://orcid.org/0000-0002-1835-7564"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wu Chen","raw_affiliation_strings":["Southeast University,School of Electrical Engineering,Nanjing,China"],"affiliations":[{"raw_affiliation_string":"Southeast University,School of Electrical Engineering,Nanjing,China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032782989","display_name":"Xiaokun He","orcid":"https://orcid.org/0000-0002-8043-6490"},"institutions":[{"id":"https://openalex.org/I4210166603","display_name":"Jinling Institute of Technology","ror":"https://ror.org/05em1gq62","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210166603"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaokun He","raw_affiliation_strings":["School of Mechanical and Electrical Engineering,Jinling Institute of Technology,Nanjing,China"],"affiliations":[{"raw_affiliation_string":"School of Mechanical and Electrical Engineering,Jinling Institute of Technology,Nanjing,China","institution_ids":["https://openalex.org/I4210166603"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046428374","display_name":"Yubo Yuan","orcid":"https://orcid.org/0000-0002-7577-3257"},"institutions":[{"id":"https://openalex.org/I4210126065","display_name":"Shanghai Electric (China)","ror":"https://ror.org/0314qy595","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210126065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yubo Yuan","raw_affiliation_strings":["Institute Nanjing Branch,State Grid Electric Power Research,Nanjing,China"],"affiliations":[{"raw_affiliation_string":"Institute Nanjing Branch,State Grid Electric Power Research,Nanjing,China","institution_ids":["https://openalex.org/I4210126065"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100377485","display_name":"Chenyu Zhang","orcid":"https://orcid.org/0000-0002-7137-8954"},"institutions":[{"id":"https://openalex.org/I4210126065","display_name":"Shanghai Electric (China)","ror":"https://ror.org/0314qy595","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210126065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chenyu Zhang","raw_affiliation_strings":["Institute Nanjing Branch,State Grid Electric Power Research,Nanjing,China"],"affiliations":[{"raw_affiliation_string":"Institute Nanjing Branch,State Grid Electric Power Research,Nanjing,China","institution_ids":["https://openalex.org/I4210126065"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101948611","display_name":"Jianyu Yu","orcid":"https://orcid.org/0000-0002-1215-9882"},"institutions":[{"id":"https://openalex.org/I4210126065","display_name":"Shanghai Electric (China)","ror":"https://ror.org/0314qy595","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210126065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianyu Yu","raw_affiliation_strings":["Institute Nanjing Branch,State Grid Electric Power Research,Nanjing,China"],"affiliations":[{"raw_affiliation_string":"Institute Nanjing Branch,State Grid Electric Power Research,Nanjing,China","institution_ids":["https://openalex.org/I4210126065"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5103131238"],"corresponding_institution_ids":["https://openalex.org/I76569877"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.31898044,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.004999999888241291,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11102","display_name":"HVDC Systems and Fault Protection","score":0.002400000113993883,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.6965000033378601},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.6243000030517578},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5961999893188477},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5133000016212463},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.5030999779701233},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.49889999628067017},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.49869999289512634},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.49399998784065247},{"id":"https://openalex.org/keywords/simple","display_name":"Simple (philosophy)","score":0.46790000796318054},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.45840001106262207}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6965000033378601},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.6243000030517578},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5961999893188477},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5806999802589417},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5133000016212463},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.5030999779701233},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.49889999628067017},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.49869999289512634},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.49399998784065247},{"id":"https://openalex.org/C2780586882","wikidata":"https://www.wikidata.org/wiki/Q7520643","display_name":"Simple (philosophy)","level":2,"score":0.46790000796318054},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.45840001106262207},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45660001039505005},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44449999928474426},{"id":"https://openalex.org/C177606310","wikidata":"https://www.wikidata.org/wiki/Q5674297","display_name":"Adaptability","level":2,"score":0.44130000472068787},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.41110000014305115},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.4032000005245209},{"id":"https://openalex.org/C183848499","wikidata":"https://www.wikidata.org/wiki/Q4167572","display_name":"Driver circuit","level":3,"score":0.3873000144958496},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.365200012922287},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3628000020980835},{"id":"https://openalex.org/C3019721787","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Fast switching","level":3,"score":0.35690000653266907},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3513999879360199},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.34880000352859497},{"id":"https://openalex.org/C2780147050","wikidata":"https://www.wikidata.org/wiki/Q5155085","display_name":"Commutation","level":3,"score":0.3343000113964081},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33000001311302185},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.329800009727478},{"id":"https://openalex.org/C85761212","wikidata":"https://www.wikidata.org/wiki/Q1974593","display_name":"Transient response","level":2,"score":0.32580000162124634},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.31189998984336853},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.30550000071525574},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.29030001163482666},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.2847000062465668},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.26809999346733093},{"id":"https://openalex.org/C14915586","wikidata":"https://www.wikidata.org/wiki/Q1653998","display_name":"Transient voltage suppressor","level":3,"score":0.26429998874664307},{"id":"https://openalex.org/C47949032","wikidata":"https://www.wikidata.org/wiki/Q663542","display_name":"Overcurrent","level":3,"score":0.25609999895095825}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iecon58223.2025.11221613","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon58223.2025.11221613","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2025 \u2013 51st Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320335967","display_name":"Science and Technology Project of State Grid","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2003935246","https://openalex.org/W2086397266","https://openalex.org/W2568824384","https://openalex.org/W2798620728","https://openalex.org/W2806110253","https://openalex.org/W2899335200","https://openalex.org/W2989713872","https://openalex.org/W2989827740","https://openalex.org/W2998838784","https://openalex.org/W3041140583","https://openalex.org/W4312613758"],"related_works":[],"abstract_inverted_index":{"This":[0],"study":[1],"proposes":[2],"a":[3,30],"novel":[4],"active":[5],"gate":[6,88],"driver":[7],"(AGD)":[8],"to":[9,40,86],"mitigate":[10],"voltage":[11,75],"and":[12,33,51,61,65,76,97],"current":[13,77],"overshoot":[14],"issues":[15],"for":[16,102],"silicon":[17],"carbide":[18],"(SiC)":[19],"MOSFETs.":[20],"The":[21,44,93],"AGD":[22,72],"integrates":[23],"the":[24,70],"advantages":[25],"of":[26],"existing":[27],"architectures":[28],"with":[29],"closed-loop":[31],"dv/dt":[32],"di/dt":[34],"hybrid":[35],"control":[36],"mechanism,":[37],"ensuring":[38],"adaptability":[39],"varying":[41],"load":[42],"conditions.":[43],"circuit":[45],"design":[46],"employs":[47],"simple":[48],"BJT":[49],"followers":[50],"passive":[52],"resistor-capacitor":[53],"networks,":[54],"offering":[55],"real-time":[56],"feedback,":[57],"rapid":[58],"transient":[59],"response":[60],"straightforward":[62],"implementation.":[63],"Experimental":[64],"simulation":[66],"results":[67],"demonstrate":[68],"that":[69],"proposed":[71],"effectively":[73],"suppresses":[74],"overshoot,":[78],"while":[79],"reducing":[80],"switching":[81],"losses":[82],"by":[83],"23-35%":[84],"compared":[85],"conventional":[87],"drivers":[89],"during":[90],"hard-switching":[91],"operations.":[92],"AGD\u2019s":[94],"simplicity,":[95],"cost-effectiveness,":[96],"versatility":[98],"validate":[99],"its":[100,108],"practicality":[101],"high-performance":[103],"SiC":[104],"MOSFET":[105],"systems,":[106],"proving":[107],"potential":[109],"in":[110],"modern":[111],"power":[112],"electronics":[113],"applications.":[114]},"counts_by_year":[],"updated_date":"2026-04-09T08:11:56.329763","created_date":"2025-11-06T00:00:00"}