{"id":"https://openalex.org/W3214048226","doi":"https://doi.org/10.1109/iecon48115.2021.9589665","title":"Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures","display_name":"Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures","publication_year":2021,"publication_date":"2021-10-13","ids":{"openalex":"https://openalex.org/W3214048226","doi":"https://doi.org/10.1109/iecon48115.2021.9589665","mag":"3214048226"},"language":"en","primary_location":{"id":"doi:10.1109/iecon48115.2021.9589665","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon48115.2021.9589665","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2021 \u2013 47th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052437274","display_name":"Mahmoud Mehrabankhomartash","orcid":"https://orcid.org/0000-0002-3254-9896"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mahmoud Mehrabankhomartash","raw_affiliation_strings":["GeorgiaTech, Atlanta, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GeorgiaTech, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076927833","display_name":"Shiyuan Yin","orcid":"https://orcid.org/0000-0002-4726-7744"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shiyuan Yin","raw_affiliation_strings":["GeorgiaTech, Atlanta, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GeorgiaTech, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102904496","display_name":"Alfonso Cruz","orcid":"https://orcid.org/0000-0003-3859-2278"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alfonso J Cruz","raw_affiliation_strings":["GeorgiaTech, Atlanta, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GeorgiaTech, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020070935","display_name":"Lukas Graber","orcid":"https://orcid.org/0000-0001-7919-5960"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Lukas Graber","raw_affiliation_strings":["GeorgiaTech, Atlanta, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GeorgiaTech, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045396089","display_name":"Maryam Saeedifard","orcid":"https://orcid.org/0000-0001-8859-7339"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Maryam Saeedifard","raw_affiliation_strings":["GeorgiaTech, Atlanta, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GeorgiaTech, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084113291","display_name":"Simon J. Evans","orcid":"https://orcid.org/0000-0001-8112-9487"},"institutions":[{"id":"https://openalex.org/I112991645","display_name":"Airbus (France)","ror":"https://ror.org/023qdcg29","country_code":"FR","type":"company","lineage":["https://openalex.org/I112991645","https://openalex.org/I4210121748"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Simon Evans","raw_affiliation_strings":["Airbus Central Research & Technology, Toulouse, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Airbus Central Research & Technology, Toulouse, France","institution_ids":["https://openalex.org/I112991645"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080916593","display_name":"Florian Kapaun","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136903","display_name":"Airbus (Germany)","ror":"https://ror.org/04a3akw68","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210121748","https://openalex.org/I4210136903"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Florian Kapaun","raw_affiliation_strings":["Airbus Central Research & Technology, Tauftkirchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Airbus Central Research & Technology, Tauftkirchen, Germany","institution_ids":["https://openalex.org/I4210136903"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028391710","display_name":"Ivan Revel","orcid":null},"institutions":[{"id":"https://openalex.org/I112991645","display_name":"Airbus (France)","ror":"https://ror.org/023qdcg29","country_code":"FR","type":"company","lineage":["https://openalex.org/I112991645","https://openalex.org/I4210121748"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Ivan Revel","raw_affiliation_strings":["Airbus Central Research & Technology, Toulouse, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Airbus Central Research & Technology, Toulouse, France","institution_ids":["https://openalex.org/I112991645"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029921673","display_name":"Gerhard Steiner","orcid":"https://orcid.org/0000-0003-3008-1414"},"institutions":[{"id":"https://openalex.org/I4210136903","display_name":"Airbus (Germany)","ror":"https://ror.org/04a3akw68","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210121748","https://openalex.org/I4210136903"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Gerhard Steiner","raw_affiliation_strings":["Airbus Central Research & Technology, Tauftkirchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Airbus Central Research & Technology, Tauftkirchen, Germany","institution_ids":["https://openalex.org/I4210136903"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005772722","display_name":"Ludovic Ybanez","orcid":"https://orcid.org/0009-0009-7067-4207"},"institutions":[{"id":"https://openalex.org/I112991645","display_name":"Airbus (France)","ror":"https://ror.org/023qdcg29","country_code":"FR","type":"company","lineage":["https://openalex.org/I112991645","https://openalex.org/I4210121748"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Ludovic Ybanez","raw_affiliation_strings":["Airbus UpNext, Toulouse, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Airbus UpNext, Toulouse, France","institution_ids":["https://openalex.org/I112991645"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011483369","display_name":"Chanyeop Park","orcid":"https://orcid.org/0000-0002-9201-1991"},"institutions":[{"id":"https://openalex.org/I99041443","display_name":"Mississippi State University","ror":"https://ror.org/0432jq872","country_code":"US","type":"education","lineage":["https://openalex.org/I4210141039","https://openalex.org/I99041443"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chanyeop Park","raw_affiliation_strings":["Mississippi State University, Starkville, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mississippi State University, Starkville, USA","institution_ids":["https://openalex.org/I99041443"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":11,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4068,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.61917713,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9958000183105469,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11664","display_name":"Fiber-reinforced polymer composites","score":0.9930999875068665,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7062347531318665},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.5297989249229431},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5024454593658447},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.48490291833877563},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4785255193710327},{"id":"https://openalex.org/keywords/cryogenics","display_name":"Cryogenics","score":0.47065985202789307},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.4705500900745392},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4631691873073578},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.4488983154296875},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4460596740245819},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.43744444847106934},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4139721989631653},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19544875621795654},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1697080135345459},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12687036395072937},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09996911883354187}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7062347531318665},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.5297989249229431},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5024454593658447},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.48490291833877563},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4785255193710327},{"id":"https://openalex.org/C179725390","wikidata":"https://www.wikidata.org/wiki/Q192116","display_name":"Cryogenics","level":2,"score":0.47065985202789307},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.4705500900745392},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4631691873073578},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.4488983154296875},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4460596740245819},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.43744444847106934},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4139721989631653},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19544875621795654},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1697080135345459},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12687036395072937},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09996911883354187},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iecon48115.2021.9589665","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon48115.2021.9589665","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2021 \u2013 47th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W144248126","https://openalex.org/W2009943423","https://openalex.org/W2059986214","https://openalex.org/W2244560171","https://openalex.org/W2569750295","https://openalex.org/W2616119696","https://openalex.org/W2769055120","https://openalex.org/W2779556881","https://openalex.org/W2798670504","https://openalex.org/W2903475083","https://openalex.org/W2903512721","https://openalex.org/W2903649556","https://openalex.org/W2905443228","https://openalex.org/W2977873091","https://openalex.org/W2982414661","https://openalex.org/W3013779546","https://openalex.org/W3083994225","https://openalex.org/W3216465049","https://openalex.org/W6605824466","https://openalex.org/W6757058594"],"related_works":["https://openalex.org/W2532318382","https://openalex.org/W2075784404","https://openalex.org/W2050847651","https://openalex.org/W4378676274","https://openalex.org/W2130550586","https://openalex.org/W2243899513","https://openalex.org/W1692342949","https://openalex.org/W2783345129","https://openalex.org/W2112615356","https://openalex.org/W1648767454"],"abstract_inverted_index":{"Cryogenic":[0],"operation":[1],"of":[2,13,20,31,42,60,69,76,133,141,150,165],"power":[3,34],"electronics":[4,35],"converters":[5],"plays":[6],"a":[7,84,95,178],"key":[8],"role":[9],"in":[10,23],"the":[11,14,24,32,58,61,70,104,131,134,138,148,156,166,173,196],"development":[12],"future":[15],"electric":[16],"aircraft":[17],"systems.":[18],"Characterization":[19],"semiconductor":[21,78],"switches":[22,79],"cryogenic":[25,33,62,96,135,175],"environment":[26,63,136],"is":[27,55,92,99,128,160],"pivotal":[28],"for":[29],"implementation":[30],"converters.":[36],"This":[37],"paper":[38],"characterizes":[39],"two":[40,139],"groups":[41,140],"Planar":[43],"and":[44,66,112,115,120,177,192],"Trench":[45],"SiC":[46,71,142,167],"MOSFETs":[47,143,168],"from":[48],"room":[49],"temperature":[50],"to":[51,56,101],"\u2013175\u00b0C.":[52],"The":[53,73,89,162],"objective":[54],"explore":[57],"impact":[59,149],"on":[64,137,155],"static":[65,163,197],"dynamic":[67,74,107],"behavior":[68],"MOSFETs.":[72],"characteristics":[75,108,164],"these":[77],"are":[80,125,144,169,195,200],"investigated":[81],"by":[82,171],"using":[83,172],"double":[85],"pulse":[86],"test":[87,90],"circuit.":[88],"circuit":[91],"placed":[93],"inside":[94],"chamber,":[97],"which":[98],"able":[100],"accurately":[102],"adjust":[103],"temperature.":[105],"Important":[106],"such":[109],"as":[110],"voltage":[111,154],"current":[113],"rise":[114],"fall":[116],"times,":[117],"turn-on,":[118],"turn-off,":[119],"total":[121],"switching":[122,157],"energy":[123,158],"losses":[124,159],"investigated.":[126],"It":[127],"shown":[129],"that":[130,199],"impacts":[132],"not":[145],"identical.":[146],"Furthermore,":[147],"gate":[151],"driver":[152],"output":[153],"discussed.":[161],"explored":[170],"same":[174],"chamber":[176],"curve":[179],"tracer.":[180],"Breakdown":[181],"voltage,":[182,185,191],"gate-source":[183],"threshold":[184],"on-state":[186],"resistance,":[187],"body":[188],"diode":[189],"forward":[190],"average":[193],"transconductance":[194],"parameters":[198],"measured.":[201]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}