{"id":"https://openalex.org/W3212932768","doi":"https://doi.org/10.1109/iecon48115.2021.9589172","title":"Understanding the Kelvin pin mitigation of the MOSFET turn-on losses by fast-switching and neutralization of the clamp diode","display_name":"Understanding the Kelvin pin mitigation of the MOSFET turn-on losses by fast-switching and neutralization of the clamp diode","publication_year":2021,"publication_date":"2021-10-13","ids":{"openalex":"https://openalex.org/W3212932768","doi":"https://doi.org/10.1109/iecon48115.2021.9589172","mag":"3212932768"},"language":"en","primary_location":{"id":"doi:10.1109/iecon48115.2021.9589172","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon48115.2021.9589172","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2021 \u2013 47th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064786995","display_name":"Francesco Giorgio","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Francesco Giorgio","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053727013","display_name":"Santi Agatino Rizzo","orcid":"https://orcid.org/0000-0001-5924-8105"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Santi Agatino Rizzo","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019488296","display_name":"N. Salerno","orcid":"https://orcid.org/0000-0002-7203-1725"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Nunzio Salerno","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029682673","display_name":"G. Scarcella","orcid":"https://orcid.org/0000-0002-1596-1264"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Giuseppe Scarcella","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030344465","display_name":"Alfio Scuto","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Alfio Scuto","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075309221","display_name":"Giuseppe Sorrentino","orcid":"https://orcid.org/0000-0003-0800-2433"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Giuseppe Sorrentino","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210154781"],"apc_list":null,"apc_paid":null,"fwci":1.221,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.76574199,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6912150382995605},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5613061785697937},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5477660298347473},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.49285292625427246},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.49017244577407837},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.47570428252220154},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45808497071266174},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4532212018966675},{"id":"https://openalex.org/keywords/voltage-drop","display_name":"Voltage drop","score":0.4358293116092682},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.4323917627334595},{"id":"https://openalex.org/keywords/lead","display_name":"Lead (geology)","score":0.42881259322166443},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40034109354019165},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.33139145374298096},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24235308170318604}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6912150382995605},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5613061785697937},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5477660298347473},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49285292625427246},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.49017244577407837},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.47570428252220154},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45808497071266174},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4532212018966675},{"id":"https://openalex.org/C82178898","wikidata":"https://www.wikidata.org/wiki/Q166839","display_name":"Voltage drop","level":3,"score":0.4358293116092682},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.4323917627334595},{"id":"https://openalex.org/C2777093003","wikidata":"https://www.wikidata.org/wiki/Q6508345","display_name":"Lead (geology)","level":2,"score":0.42881259322166443},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40034109354019165},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.33139145374298096},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24235308170318604},{"id":"https://openalex.org/C114793014","wikidata":"https://www.wikidata.org/wiki/Q52109","display_name":"Geomorphology","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iecon48115.2021.9589172","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon48115.2021.9589172","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2021 \u2013 47th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.49000000953674316,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1898182446","https://openalex.org/W2001715421","https://openalex.org/W2014224928","https://openalex.org/W2026421040","https://openalex.org/W2073830966","https://openalex.org/W2150450391","https://openalex.org/W2524179101","https://openalex.org/W2533128293","https://openalex.org/W2548785734","https://openalex.org/W2549050009","https://openalex.org/W2588561742","https://openalex.org/W2744766301","https://openalex.org/W2770301146","https://openalex.org/W2789609183","https://openalex.org/W2799037078","https://openalex.org/W2889396422","https://openalex.org/W3021582133","https://openalex.org/W3123078886","https://openalex.org/W6729686054","https://openalex.org/W6742843705"],"related_works":["https://openalex.org/W2159000463","https://openalex.org/W2542162669","https://openalex.org/W1977042749","https://openalex.org/W2606572865","https://openalex.org/W2049062674","https://openalex.org/W2121451436","https://openalex.org/W2078152308","https://openalex.org/W2115248544","https://openalex.org/W2975003965","https://openalex.org/W2385412623"],"abstract_inverted_index":{"The":[0,44,80,149,176],"super-junction":[1],"MOSFETs":[2,17],"enhanced":[3],"with":[4],"an":[5],"additional":[6],"source,":[7],"called":[8],"Kelvin":[9],"pin":[10],"(4-lead),":[11],"are":[12],"faster":[13,191],"than":[14],"traditional":[15],"three-terminal":[16],"(3-lead).":[18],"Moreover,":[19],"the":[20,27,32,38,49,58,62,66,71,75,88,97,111,114,124,129,136,139,155,165,169,173,181,195,199],"former":[21],"presents":[22,53],"a":[23,54,93,119],"lower":[24,94],"increment":[25],"in":[26,154],"turn-on":[28,147],"power":[29,192],"losses":[30],"as":[31,164,172],"load":[33],"increases.":[34,175],"This":[35],"paper":[36],"investigates":[37],"phenomenon":[39,185],"and":[40,69,161,178,198],"explains":[41],"this":[42,101,107,184],"behavior.":[43],"drain-source":[45,98],"voltage":[46,59,102],"waveform":[47],"of":[48,84,96,183],"3-lead":[50,156],"device":[51,126],"usually":[52],"plateau":[55,89,140,150],"due":[56],"to":[57,70,105,127,190],"drop":[60],"across":[61],"parasitic":[63],"inductances":[64],"during":[65],"current":[67,82,116,160,166,174],"rising":[68],"clamp":[72],"imposed":[73],"by":[74],"diode":[76],"until":[77],"it":[78,162],"conducts.":[79],"higher":[81,115],"speed":[83,117],"4-lead":[85,125],"involves":[86,118],"that":[87],"should":[90],"occur":[91,143],"at":[92,158],"value":[95],"voltage,":[99],"then":[100],"takes":[103],"longer":[104],"reach":[106,128],"lockout":[108],"value.":[109],"On":[110],"other":[112],"hand,":[113],"reduced":[120,146],"time":[121],"necessary":[122],"for":[123],"boost":[130],"inductor":[131],"current,":[132],"thus":[133,144,168],"unclamping":[134],"earlier":[135],"diode.":[137],"Consequently,":[138],"does":[141],"not":[142],"achieving":[145],"losses.":[148],"extension":[151],"is":[152],"small":[153],"MOSFET":[157,197],"low":[159],"increases":[163,171],"increases,":[167],"advantage":[170],"formulation":[177],"argumentation":[179],"supporting":[180],"understanding":[182],"can":[186],"be":[187],"applied":[188],"also":[189],"devices":[193],"like":[194],"SiC":[196],"GaN":[200],"HEMT.":[201]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}