{"id":"https://openalex.org/W2989827740","doi":"https://doi.org/10.1109/iecon.2019.8926673","title":"Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers","display_name":"Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W2989827740","doi":"https://doi.org/10.1109/iecon.2019.8926673","mag":"2989827740"},"language":"en","primary_location":{"id":"doi:10.1109/iecon.2019.8926673","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2019.8926673","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://vbn.aau.dk/ws/files/315438839/final_IECON_mod3.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009966547","display_name":"Hongbo Zhao","orcid":"https://orcid.org/0000-0002-0043-0030"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":true,"raw_author_name":"Hongbo Zhao","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075932339","display_name":"Dipen Narendra Dalal","orcid":"https://orcid.org/0000-0002-8168-7654"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Dipen Narendra Dalal","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021491888","display_name":"Xiongfei Wang","orcid":"https://orcid.org/0000-0002-6327-9729"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Xiongfei Wang","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090496734","display_name":"Jannick Kj\u00e6r J\u00f8rgensen","orcid":"https://orcid.org/0000-0003-4151-2494"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Jannick Kjaer Jorgensen","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041518461","display_name":"Christian Uhrenfeldt","orcid":"https://orcid.org/0000-0003-0992-1888"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Christian Uhrenfeldt","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036137784","display_name":"Szymon B\u0119czkowski","orcid":"https://orcid.org/0000-0002-3627-9272"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Szymon Beczkowski","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043640403","display_name":"Stig Munk\u2010Nielsen","orcid":"https://orcid.org/0000-0001-9653-5437"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Stig Munk-Nielsen","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5009966547"],"corresponding_institution_ids":["https://openalex.org/I891191580"],"apc_list":null,"apc_paid":null,"fwci":0.9638,"has_fulltext":true,"cited_by_count":26,"citation_normalized_percentile":{"value":0.76873912,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"5147","last_page":"5153"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.866573691368103},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.7547335624694824},{"id":"https://openalex.org/keywords/transformer","display_name":"Transformer","score":0.6544859409332275},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5069890022277832},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4974882900714874},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.46421340107917786},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44401001930236816},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.41923436522483826},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41359859704971313},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3266592025756836},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3216916024684906},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2125197947025299},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.09798648953437805}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.866573691368103},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.7547335624694824},{"id":"https://openalex.org/C66322947","wikidata":"https://www.wikidata.org/wiki/Q11658","display_name":"Transformer","level":3,"score":0.6544859409332275},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5069890022277832},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4974882900714874},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.46421340107917786},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44401001930236816},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.41923436522483826},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41359859704971313},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3266592025756836},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3216916024684906},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2125197947025299},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.09798648953437805},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/iecon.2019.8926673","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2019.8926673","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},{"id":"pmh:oai:pure.atira.dk:publications/f5ccdc05-c88e-4f0c-9078-7d8d193f276d","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/f5ccdc05-c88e-4f0c-9078-7d8d193f276d","pdf_url":"https://vbn.aau.dk/ws/files/315438839/final_IECON_mod3.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Zhao, H, Dalal, D N, Wang, X, J\u00f8rgensen, J K, Uhrenfeldt, C, Beczkowski, S M & Munk-Nielsen, S 2019, Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. in Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. IEEE Press, Lisbon, Portugal, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal, 14/10/2019. https://doi.org/10.1109/IECON.2019.8926673","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":{"id":"pmh:oai:pure.atira.dk:publications/f5ccdc05-c88e-4f0c-9078-7d8d193f276d","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/f5ccdc05-c88e-4f0c-9078-7d8d193f276d","pdf_url":"https://vbn.aau.dk/ws/files/315438839/final_IECON_mod3.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Zhao, H, Dalal, D N, Wang, X, J\u00f8rgensen, J K, Uhrenfeldt, C, Beczkowski, S M & Munk-Nielsen, S 2019, Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. in Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. IEEE Press, Lisbon, Portugal, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal, 14/10/2019. https://doi.org/10.1109/IECON.2019.8926673","raw_type":"info:eu-repo/semantics/publishedVersion"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7900000214576721}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2989827740.pdf","grobid_xml":"https://content.openalex.org/works/W2989827740.grobid-xml"},"referenced_works_count":11,"referenced_works":["https://openalex.org/W2169859991","https://openalex.org/W2172639045","https://openalex.org/W2285871276","https://openalex.org/W2604232289","https://openalex.org/W2768972240","https://openalex.org/W2769072221","https://openalex.org/W2798399738","https://openalex.org/W2889695175","https://openalex.org/W2919542856","https://openalex.org/W2922621016","https://openalex.org/W6696238892"],"related_works":["https://openalex.org/W2058545256","https://openalex.org/W4396689093","https://openalex.org/W2394034449","https://openalex.org/W4386493895","https://openalex.org/W2904654231","https://openalex.org/W4210807885","https://openalex.org/W2051045034","https://openalex.org/W2248915580","https://openalex.org/W2999380399","https://openalex.org/W4304890870"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"a":[3],"physics-level":[4],"modeling":[5,81],"method":[6,82],"for":[7,19],"analyzing":[8],"the":[9,17,20,31,40,49,55,66,72,76,79,88],"primary":[10],"to":[11,54],"secondary-side":[12],"(common-mode)":[13],"parasitic":[14,58],"capacitance":[15,38,51],"of":[16,30,39,65,78],"transformer":[18,67],"Medium-voltage":[21],"SiC":[22],"MOSFETs":[23],"gate":[24],"drivers.":[25],"The":[26,61],"lumped":[27],"circuit-based":[28],"physics-model":[29],"turn-to-turn":[32],"capacitance,":[33,35],"turn-to-core":[34,50],"and":[36,44],"self":[37],"core":[41],"are":[42],"derived,":[43],"it":[45],"is":[46],"found":[47],"that":[48],"mainly":[52],"contributes":[53],"total":[56],"equivalent":[57],"common-mode":[59,63],"capacitance.":[60],"measured":[62],"impedance":[64],"shows":[68],"high":[69],"agreements":[70],"with":[71],"calculated":[73],"value,":[74],"where":[75],"accuracy":[77],"proposed":[80],"can":[83],"be":[84],"proved":[85],"based":[86],"on":[87],"experimental":[89],"results.":[90]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1}],"updated_date":"2026-03-17T17:19:04.345684","created_date":"2025-10-10T00:00:00"}