{"id":"https://openalex.org/W2907358290","doi":"https://doi.org/10.1109/iecon.2018.8592522","title":"An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation","display_name":"An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation","publication_year":2018,"publication_date":"2018-10-01","ids":{"openalex":"https://openalex.org/W2907358290","doi":"https://doi.org/10.1109/iecon.2018.8592522","mag":"2907358290"},"language":"en","primary_location":{"id":"doi:10.1109/iecon.2018.8592522","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2018.8592522","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069337182","display_name":"Md Maksudul Hossain","orcid":"https://orcid.org/0000-0002-9166-8932"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Md Maksudul Hossain","raw_affiliation_strings":["Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083668625","display_name":"Lorenzo Ceccarelli","orcid":"https://orcid.org/0000-0003-1379-2521"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Lorenzo Ceccarelli","raw_affiliation_strings":["Department of Energy Technology, Aalborg University, Aalborg East, Denmark"],"affiliations":[{"raw_affiliation_string":"Department of Energy Technology, Aalborg University, Aalborg East, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051119030","display_name":"Arman Ur Rashid","orcid":"https://orcid.org/0000-0002-6061-5934"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arman Ur Rashid","raw_affiliation_strings":["Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012421879","display_name":"Ramchandra Kotecha","orcid":"https://orcid.org/0000-0002-1813-8388"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ramchandra M. Kotecha","raw_affiliation_strings":["Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005564634","display_name":"H. Alan Mantooth","orcid":"https://orcid.org/0000-0001-6447-5345"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Alan Mantooth","raw_affiliation_strings":["Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering, University of Arkansas, Fayetteville, AR, U.S.A","institution_ids":["https://openalex.org/I78715868"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5069337182"],"corresponding_institution_ids":["https://openalex.org/I78715868"],"apc_list":null,"apc_paid":null,"fwci":1.4388,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.8354466,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1011","last_page":"1016"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.988099992275238,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8388696312904358},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.7065146565437317},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5972989201545715},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5435817241668701},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4869116544723511},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.4845796823501587},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4632467031478882},{"id":"https://openalex.org/keywords/pulsed-power","display_name":"Pulsed power","score":0.43165135383605957},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4122084975242615},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3730374574661255},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29944080114364624},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28775495290756226},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.274944543838501},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.19754889607429504},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14968305826187134},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11763972043991089}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8388696312904358},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.7065146565437317},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5972989201545715},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5435817241668701},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4869116544723511},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.4845796823501587},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4632467031478882},{"id":"https://openalex.org/C97039730","wikidata":"https://www.wikidata.org/wiki/Q552565","display_name":"Pulsed power","level":3,"score":0.43165135383605957},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4122084975242615},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3730374574661255},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29944080114364624},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28775495290756226},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.274944543838501},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.19754889607429504},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14968305826187134},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11763972043991089},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/iecon.2018.8592522","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2018.8592522","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},{"id":"pmh:oai:pure.atira.dk:publications/2bacc2cd-c012-40a3-a450-c9b6afa1a430","is_oa":false,"landing_page_url":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8592522","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Hossain, M M, Ceccarelli, L, Rashid, A U, Kotecha, R & Mantooth, H A 2018, An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation. in Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE (Institute of Electrical and Electronics Engineers), Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, pp. 1011-1016, 44th Annual Conference of the IEEE Industrial Electronics Society, Washington, District of Columbia, United States, 21/10/2018. https://doi.org/10.1109/IECON.2018.8592522","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:pure.atira.dk:publications/2bacc2cd-c012-40a3-a450-c9b6afa1a430","is_oa":false,"landing_page_url":"https://vbn.aau.dk/da/publications/2bacc2cd-c012-40a3-a450-c9b6afa1a430","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Hossain , M M , Ceccarelli , L , Rashid , A U , Kotecha , R & Mantooth , H A 2018 , An Improved Physics-based LTSpice Compact Electro-Thermal Model for a SiC Power MOSFET with Experimental Validation . in Proceedings of IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society . IEEE , Proceedings of the Annual Conference of the IEEE Industrial Electronics Society , pp. 1011-1016 , 44th Annual Conference of the IEEE Industrial Electronics Society , Washington , District of Columbia , United States , 21/10/2018 . https://doi.org/10.1109/IECON.2018.8592522","raw_type":"contributionToPeriodical"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6000000238418579,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1483017127","https://openalex.org/W1541648135","https://openalex.org/W1969544542","https://openalex.org/W2076838760","https://openalex.org/W2136250228","https://openalex.org/W2142964273","https://openalex.org/W2146719088","https://openalex.org/W2166315761","https://openalex.org/W2284619248","https://openalex.org/W2554694993","https://openalex.org/W2582567967","https://openalex.org/W6632350983","https://openalex.org/W6729902251"],"related_works":["https://openalex.org/W2082505892","https://openalex.org/W2258872751","https://openalex.org/W2543878150","https://openalex.org/W2538025369","https://openalex.org/W2186533392","https://openalex.org/W2993176810","https://openalex.org/W2072984677","https://openalex.org/W2625566746","https://openalex.org/W2624847784","https://openalex.org/W4386066422"],"abstract_inverted_index":{"A":[0,15],"compact":[1],"electro-thermal":[2],"SiC":[3,20],"Power":[4],"MOSFET":[5,22],"model":[6,37,71],"implemented":[7],"in":[8,12,27],"LTSpice":[9],"is":[10],"presented":[11],"this":[13,28],"paper.":[14],"1200":[16],"V,":[17],"90A":[18],"CREE":[19],"power":[21],"(C2M0025120D)":[23],"has":[24,42,52,76],"been":[25,43,53,78],"used":[26],"work":[29],"to":[30],"illustrate":[31],"the":[32,56,73],"parameter":[33],"extraction":[34],"and":[35,62,68],"experimental":[36],"validation.":[38],"The":[39,50],"dynamic":[40],"validation":[41],"shown":[44],"using":[45],"a":[46,63],"double-pulse":[47],"test":[48],"circuit.":[49],"convergence":[51],"tested":[54],"with":[55],"4-switch":[57],"topology":[58],"of":[59,72],"an":[60],"inverter":[61],"comparison":[64],"between":[65],"MAST,":[66],"Verilog-A":[67],"CREE's":[69],"empirical":[70],"same":[74],"device":[75],"also":[77],"presented.":[79]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":3}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}