{"id":"https://openalex.org/W2774260063","doi":"https://doi.org/10.1109/iecon.2017.8216207","title":"High power IGCT compact model with impact ionization effect","display_name":"High power IGCT compact model with impact ionization effect","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2774260063","doi":"https://doi.org/10.1109/iecon.2017.8216207","mag":"2774260063"},"language":"en","primary_location":{"id":"doi:10.1109/iecon.2017.8216207","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2017.8216207","pdf_url":null,"source":{"id":"https://openalex.org/S4363608531","display_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072992944","display_name":"Gang Lyu","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Gang Lyu","raw_affiliation_strings":["Department of Electrical Engineering, Tsinghua Unviersity, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Tsinghua Unviersity, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100691217","display_name":"Wenpeng Zhou","orcid":"https://orcid.org/0000-0003-3053-2916"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenpeng Zhou","raw_affiliation_strings":["Department of Electrical Engineering, Tsinghua Unviersity, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Tsinghua Unviersity, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070773493","display_name":"Jiapeng Liu","orcid":"https://orcid.org/0000-0003-1329-6667"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiapeng Liu","raw_affiliation_strings":["Department of Electrical Engineering, Tsinghua Unviersity, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Tsinghua Unviersity, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066964305","display_name":"Rong Zeng","orcid":"https://orcid.org/0000-0002-0832-7564"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rong Zeng","raw_affiliation_strings":["Department of Electrical Engineering, Tsinghua Unviersity, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Tsinghua Unviersity, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5072992944"],"corresponding_institution_ids":["https://openalex.org/I99065089"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.1909284,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"2","issue":null,"first_page":"1215","last_page":"1219"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10511","display_name":"High voltage insulation and dielectric phenomena","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ambipolar-diffusion","display_name":"Ambipolar diffusion","score":0.8394598960876465},{"id":"https://openalex.org/keywords/integrated-gate-commutated-thyristor","display_name":"Integrated gate-commutated thyristor","score":0.7112243175506592},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5297300219535828},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5073952078819275},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.48927614092826843},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.4673958718776703},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.44806376099586487},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42552435398101807},{"id":"https://openalex.org/keywords/ionization","display_name":"Ionization","score":0.418687641620636},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"Impact ionization","score":0.41455140709877014},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.3965616822242737},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.30644434690475464},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29256847500801086},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.28396499156951904},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28156107664108276},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24147087335586548},{"id":"https://openalex.org/keywords/thyristor","display_name":"Thyristor","score":0.18877628445625305},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.07379505038261414}],"concepts":[{"id":"https://openalex.org/C25621703","wikidata":"https://www.wikidata.org/wiki/Q2658857","display_name":"Ambipolar diffusion","level":3,"score":0.8394598960876465},{"id":"https://openalex.org/C194777113","wikidata":"https://www.wikidata.org/wiki/Q1066563","display_name":"Integrated gate-commutated thyristor","level":4,"score":0.7112243175506592},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5297300219535828},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5073952078819275},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.48927614092826843},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.4673958718776703},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.44806376099586487},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42552435398101807},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.418687641620636},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.41455140709877014},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.3965616822242737},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.30644434690475464},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29256847500801086},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28396499156951904},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28156107664108276},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24147087335586548},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.18877628445625305},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.07379505038261414},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/iecon.2017.8216207","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2017.8216207","pdf_url":null,"source":{"id":"https://openalex.org/S4363608531","display_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-144753","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-144753","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6000000238418579,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1503320701","https://openalex.org/W1511158764","https://openalex.org/W1522914110","https://openalex.org/W1546494189","https://openalex.org/W1832905188","https://openalex.org/W1920436925","https://openalex.org/W1939575193","https://openalex.org/W1974782082","https://openalex.org/W2011102080","https://openalex.org/W2034970425","https://openalex.org/W2063355994","https://openalex.org/W2102374134","https://openalex.org/W2133452518","https://openalex.org/W2153056251","https://openalex.org/W2159215651","https://openalex.org/W2161280372","https://openalex.org/W2162707783","https://openalex.org/W2171022331","https://openalex.org/W2179039408","https://openalex.org/W2214622373","https://openalex.org/W2239268276","https://openalex.org/W2243301229","https://openalex.org/W2376545980","https://openalex.org/W6629955879","https://openalex.org/W6640127059","https://openalex.org/W6688703937","https://openalex.org/W6690858173"],"related_works":["https://openalex.org/W2802925087","https://openalex.org/W2053393604","https://openalex.org/W2027446309","https://openalex.org/W2585238015","https://openalex.org/W1995418911","https://openalex.org/W2002600719","https://openalex.org/W2603973440","https://openalex.org/W2022223854","https://openalex.org/W2057022299","https://openalex.org/W1977715020"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,44,49],"development":[4],"and":[5,21],"validation":[6],"of":[7,12,18,31],"a":[8,39],"physics-based":[9],"compact":[10],"model":[11,26],"IGCT":[13],"for":[14,43],"application":[15],"in":[16,48],"optimization":[17],"circuit":[19],"parameters":[20],"GCT":[22],"wafer":[23],"design.":[24],"The":[25,52],"proposed":[27],"can":[28],"simulate":[29],"aspects":[30],"high-voltage":[32],"IGCTs":[33],"including":[34],"impact":[35],"ionization.":[36],"It":[37],"uses":[38],"Fourier":[40],"series":[41],"solution":[42],"ambipolar":[45],"diffusion":[46],"equation":[47],"base":[50],"region.":[51],"model's":[53],"simulation":[54],"results":[55],"are":[56],"validated":[57],"by":[58],"comparision":[59],"with":[60],"experiments.":[61]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}