{"id":"https://openalex.org/W2773236382","doi":"https://doi.org/10.1109/iecon.2017.8216122","title":"A simple SiC power MOSFET model","display_name":"A simple SiC power MOSFET model","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2773236382","doi":"https://doi.org/10.1109/iecon.2017.8216122","mag":"2773236382"},"language":"en","primary_location":{"id":"doi:10.1109/iecon.2017.8216122","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2017.8216122","pdf_url":null,"source":{"id":"https://openalex.org/S4363608531","display_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101027727","display_name":"Duan Zhuolin","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210128819","display_name":"Institute of Electrical Engineering","ror":"https://ror.org/033js6g46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Duan Zhuolin","raw_affiliation_strings":["University of Chinese Academy of Sciences, Beijing, China","Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing, China","Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366"]},{"raw_affiliation_string":"Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101618925","display_name":"Dong Zhang","orcid":"https://orcid.org/0000-0001-6136-2775"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210128819","display_name":"Institute of Electrical Engineering","ror":"https://ror.org/033js6g46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhang Dong","raw_affiliation_strings":["Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]},{"raw_affiliation_string":"Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Fan Tao","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210128819","display_name":"Institute of Electrical Engineering","ror":"https://ror.org/033js6g46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fan Tao","raw_affiliation_strings":["Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]},{"raw_affiliation_string":"Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":null,"display_name":"Wen Xuhui","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210128819","display_name":"Institute of Electrical Engineering","ror":"https://ror.org/033js6g46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wen Xuhui","raw_affiliation_strings":["Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210128819"]},{"raw_affiliation_string":"Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, Beijing, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"704","last_page":"708"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7715692520141602},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.7204908132553101},{"id":"https://openalex.org/keywords/emi","display_name":"EMI","score":0.6663517951965332},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6461244821548462},{"id":"https://openalex.org/keywords/electromagnetic-interference","display_name":"Electromagnetic interference","score":0.616544246673584},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5814537405967712},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5401948690414429},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5048547387123108},{"id":"https://openalex.org/keywords/behavioral-modeling","display_name":"Behavioral modeling","score":0.502263069152832},{"id":"https://openalex.org/keywords/electronic-circuit-simulation","display_name":"Electronic circuit simulation","score":0.4848273992538452},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.470638245344162},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.4497586786746979},{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.4463393986225128},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.41948723793029785},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4123240113258362},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.3972207307815552},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3945148289203644},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3859359323978424},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25662893056869507},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14841249585151672}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7715692520141602},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.7204908132553101},{"id":"https://openalex.org/C43461449","wikidata":"https://www.wikidata.org/wiki/Q2495531","display_name":"EMI","level":3,"score":0.6663517951965332},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6461244821548462},{"id":"https://openalex.org/C184892835","wikidata":"https://www.wikidata.org/wiki/Q1474513","display_name":"Electromagnetic interference","level":2,"score":0.616544246673584},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5814537405967712},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5401948690414429},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5048547387123108},{"id":"https://openalex.org/C78639753","wikidata":"https://www.wikidata.org/wiki/Q3318160","display_name":"Behavioral modeling","level":2,"score":0.502263069152832},{"id":"https://openalex.org/C46205389","wikidata":"https://www.wikidata.org/wiki/Q1270401","display_name":"Electronic circuit simulation","level":3,"score":0.4848273992538452},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.470638245344162},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.4497586786746979},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.4463393986225128},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41948723793029785},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4123240113258362},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.3972207307815552},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3945148289203644},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3859359323978424},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25662893056869507},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14841249585151672},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iecon.2017.8216122","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2017.8216122","pdf_url":null,"source":{"id":"https://openalex.org/S4363608531","display_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8600000143051147,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1988655095","https://openalex.org/W2001319189","https://openalex.org/W2074598226","https://openalex.org/W2116114150","https://openalex.org/W2135527388","https://openalex.org/W2152914703","https://openalex.org/W2157764301","https://openalex.org/W2160272201","https://openalex.org/W2172415194"],"related_works":["https://openalex.org/W2977318605","https://openalex.org/W1607623168","https://openalex.org/W2152413727","https://openalex.org/W2007746594","https://openalex.org/W2031145321","https://openalex.org/W1521840331","https://openalex.org/W2021857492","https://openalex.org/W2056617253","https://openalex.org/W2267634967","https://openalex.org/W3138123758"],"abstract_inverted_index":{"With":[0],"the":[1,35],"application":[2],"of":[3],"SiC":[4,61,70],"power":[5,13,62,71],"metal-oxide-semiconductor":[6],"field-effect":[7],"transistor":[8],"(MOSFET)":[9],"in":[10,34,65,95],"high":[11],"voltage":[12],"converters,":[14],"switching":[15],"frequency":[16,100],"and":[17,30,40,86,99,103],"speed":[18],"increase.":[19],"Thus,":[20,64],"severe":[21],"electromagnetic":[22],"interference(EMI)":[23],"problems":[24],"occur.":[25],"To":[26],"predict":[27],"EMI":[28],"performances":[29,33],"evaluate":[31],"other":[32],"design":[36],"phase,":[37],"a":[38,68],"simple":[39,69],"valid":[41],"switch":[42],"model":[43,74],"is":[44,75],"needed.":[45],"However,":[46],"so":[47],"far,":[48],"there":[49],"are":[50,56,89],"very":[51],"few":[52],"behavioral":[53,73],"models":[54],"that":[55,94],"available":[57],"for":[58],"high-voltage,":[59],"large-current":[60],"MOSFETs.":[63],"this":[66],"paper,":[67],"MOSFET":[72],"proposed":[76],"using":[77],"spice":[78],"language.":[79],"By":[80],"double":[81],"pulse":[82],"test":[83],"circuits,":[84],"simulation":[85,102],"experimental":[87,104],"results":[88,105],"compared.":[90],"It":[91],"was":[92],"shown":[93],"both":[96],"time":[97],"domain":[98],"domain,":[101],"match":[106],"well.":[107]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2019,"cited_by_count":3}],"updated_date":"2026-07-23T08:03:31.855105","created_date":"2025-10-10T00:00:00"}