{"id":"https://openalex.org/W2567996552","doi":"https://doi.org/10.1109/iecon.2016.7793813","title":"Hard and soft switching operation of the half-bridge based on 900V SiC MOSFETs","display_name":"Hard and soft switching operation of the half-bridge based on 900V SiC MOSFETs","publication_year":2016,"publication_date":"2016-10-01","ids":{"openalex":"https://openalex.org/W2567996552","doi":"https://doi.org/10.1109/iecon.2016.7793813","mag":"2567996552"},"language":"en","primary_location":{"id":"doi:10.1109/iecon.2016.7793813","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2016.7793813","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036457688","display_name":"Sarnowska Anna","orcid":null},"institutions":[{"id":"https://openalex.org/I108403487","display_name":"Warsaw University of Technology","ror":"https://ror.org/00y0xnp53","country_code":"PL","type":"education","lineage":["https://openalex.org/I108403487"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Anna Sarnowska","raw_affiliation_strings":["Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland","institution_ids":["https://openalex.org/I108403487"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003624399","display_name":"Jacek R\u0105bkowski","orcid":"https://orcid.org/0000-0001-8857-3505"},"institutions":[{"id":"https://openalex.org/I108403487","display_name":"Warsaw University of Technology","ror":"https://ror.org/00y0xnp53","country_code":"PL","type":"education","lineage":["https://openalex.org/I108403487"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Jacek Rabkowski","raw_affiliation_strings":["Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland","institution_ids":["https://openalex.org/I108403487"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I108403487"],"apc_list":null,"apc_paid":null,"fwci":1.6145,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.82578313,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"7167","last_page":"7172"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7774120569229126},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.74000483751297},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7139016389846802},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.6546149253845215},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5796074867248535},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5524711012840271},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5467587113380432},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5289333462715149},{"id":"https://openalex.org/keywords/half-bridge","display_name":"Half bridge","score":0.5111930966377258},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.476481169462204},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4496574103832245},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4428616762161255},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42911723256111145},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3533850610256195},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27997326850891113},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22783777117729187},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09610059857368469}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7774120569229126},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.74000483751297},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7139016389846802},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6546149253845215},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5796074867248535},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5524711012840271},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5467587113380432},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5289333462715149},{"id":"https://openalex.org/C3019968007","wikidata":"https://www.wikidata.org/wiki/Q5641793","display_name":"Half bridge","level":4,"score":0.5111930966377258},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.476481169462204},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4496574103832245},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4428616762161255},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42911723256111145},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3533850610256195},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27997326850891113},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22783777117729187},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09610059857368469},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iecon.2016.7793813","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iecon.2016.7793813","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W788411988","https://openalex.org/W1488095954","https://openalex.org/W1541427314","https://openalex.org/W1904080897","https://openalex.org/W1973325791","https://openalex.org/W1973592577","https://openalex.org/W2029699094","https://openalex.org/W2081477286","https://openalex.org/W2095452067","https://openalex.org/W2118312986","https://openalex.org/W2124309145","https://openalex.org/W2136514507","https://openalex.org/W2152012503","https://openalex.org/W2321001902","https://openalex.org/W2321142211","https://openalex.org/W2342802171","https://openalex.org/W6679577957"],"related_works":["https://openalex.org/W2133687845","https://openalex.org/W2904257419","https://openalex.org/W1986017419","https://openalex.org/W4322764371","https://openalex.org/W4200422976","https://openalex.org/W2060679178","https://openalex.org/W4285789043","https://openalex.org/W2742861573","https://openalex.org/W2084063759","https://openalex.org/W2055119798"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3,69],"experimental":[4],"evaluation":[5],"of":[6,35,43,65,83],"the":[7,36],"half-bridge":[8],"converter":[9,17],"based":[10],"on":[11],"new":[12],"900V":[13],"SiC":[14,66],"MOSFEs.":[15],"The":[16],"is":[18,72],"tested":[19],"with":[20,55,73],"pure":[21],"inductive":[22],"load":[23],"at":[24],"various":[25],"switching":[26],"frequencies":[27],"and":[28,53],"power":[29,85],"levels":[30],"to":[31,77,81],"test":[32],"overall":[33],"performance":[34,64],"devices.":[37],"Transistors":[38],"operate":[39],"as":[40],"a":[41],"part":[42],"different":[44],"switch":[45],"scenarios:":[46],"MOSFET":[47],"(with":[48],"body":[49],"diode),":[50],"MOSFET+SiC":[51],"Schottky":[52],"finally":[54],"additional":[56],"parallel":[57,74],"capacitors.":[58,75],"All":[59],"performed":[60],"tests":[61],"conform":[62],"excellent":[63],"transistors,":[67],"however,":[68],"optimal":[70],"configuration":[71],"Near":[76],"ZVS":[78],"conditions":[79],"lead":[80],"reduction":[82],"transistor's":[84],"losses":[86],"by":[87],"28":[88],"per":[89],"cent.":[90]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}